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Part number
DistributorStockDCManufactureDescription
 
48  N/A  ST  TO220-F  
 
492100  12  -  -  
 
10000  2008  -  -  
 
25  -  ST  IC2world.com  
 
55000  -  ST  .  
 
25850  12  ST MICROELECTRONICS SEMI  -  
 
10000  2008  -  -  
 
498101  12  MAX-220  ST  
 
7260  N/A  STN/A  -  
 
4000  -  ST  TO-220  
 
10110  00/16/03  ST  TO-220F/TO-220/TO-220F  
 
137  13  ST MICROELECTRONICS SEMI  -  
 
12580  2007  -  ST  
 
3000  -  ST  ST  

 

Part information


TYPICAL RDS(on) = 0.052 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 30V GATE TO SOURCE VOLTAGE RATING

DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS

Part numberCircuit descriptionManufacture
STU36NB20 Medium Voltage. Old PRODUCT: Not Suitable For Design-in
Category: Discrete - Transistors
ST Microelectronics, Inc.

 

 
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