Find supplier - Request For Quote

 

Find Components to buy

Search disributor results found for: N113E

    Select the checkbox items you want to buy or to ask for price then click on this button =>

   
Part number
DistributorStockDCManufactureDescription
 
35800  2014  Switchcraft Inc.  1/4 ENCLOSED JACK  
 
100000  -  Switchcraft Inc.  -  
 
78912  12  -  -  
 
256000  12  -  -  
 
26000  -  .  -  
 
10000  2008  -  -  
 
10000  13  NXP  -  
 
10000  -  -  -  
 
12000  2014  NXP Semiconductors  TRANS PREBIAS NPN 250MW SMT3  
 
8743  12  NXP  SMT3  
 
26000  -  .  -  
 
256000  12  -  -  
 
26000  -  .  -  
 
10000  2008  -  -  
 
256000  12  -  -  
 
12000  2014  NXP Semiconductors  TRANS PREBIAS NPN 700MW TO92-3  
 
10000  -  -  -  
 
3489  12  NXP  TO-92-3  
 
12565  13  NXP  -  
 
26000  -  .  -  
 
1721  -  -  -  
 
3400  -  NXP  SOT-23  
 
256000  12  -  -  
 
10000  2008  -  -  
 
26000  -  .  -  
 
81000  2015ROHS  NXP  -  
 
9000  13  NXP  -  
 
6800  12  NXP  TO-236AB  
 
12000  2014  NXP Semiconductors  TRANS PREBIAS NPN 250MW TO236AB  
 
6400  -  NXP  -  
 
10000  -  -  -  
 
10000  2008  -  -  
 
256000  12  -  -  
 
26000  -  .  -  

 

Part information


800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.

Also available in SOT54A and SOT54 variant packages (see Section 2).

800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs 10 % resistor ratio tolerance

I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads

Table

Part numberCircuit descriptionManufacture
PBRN113ET,215 BRT TRANSISTOR, NPN, 40V, 600MA, 1KOHM / 1KOHM, 3-SOT-23. Specifications: Collector Emitter Voltage V(br)ceo: 40V ; Continuous Collector Current Ic: 600mA ; Base Input Resistor R1: 1kohm ; Base-Emitter Resistor R2: 1kohm ; Resistor Ratio, R1 / R2: 1 ; RF Transistor
Category: Semiconductors - Discretes - Transistors - Bipolar - Pre-Biased / Digital
NXP Semiconductors
PBRN113EK,115 Transistor (bjt) - Single, Pre-biased Discrete Semiconductor Product 600mA 40V 250mW NPN - Pre-Biased; TRANS NPN W/RES 40V SC-59A. Specifications: Transistor Type: NPN - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 40V ; Current - Collector (Ic) (Max): 600mA ; Power - Max: 250mW ; Resistor - Base (R1) (Ohms): 1K ; Resistor
Category: Discrete Semiconductor Products
-
PBRN113ES,126 Transistor (bjt) - Single, Pre-biased Discrete Semiconductor Product 800mA 40V 700mW NPN - Pre-Biased; TRANS NPN W/RES 40V TO-92. Specifications: Transistor Type: NPN - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 40V ; Current - Collector (Ic) (Max): 800mA ; Power - Max: 700mW ; Resistor - Base (R1) (Ohms): 1K ; Resistor -
MN113E GENERAL PURPOSE AUDIO CONNECTOR, JACK. Specifications: Applications: Audio and Video Connectors
Category: Wire, Connectors and Interconnects - Electrical Connectors
Switchcraft Inc.
MN113EPCSX GENERAL PURPOSE AUDIO CONNECTOR, JACK. Specifications: Mounting Style: 4-hole ; Approvals: RoHS -
MN113EX - -
N113EPCSX - -
N113EX - -
PBRN113ET 700 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB. Specifications: Polarity: NPN ; Package Type: PLASTIC PACKAGE-3
Category: Discrete - Transistors
NXP Semiconductors
PBRN113ET,215 - -

 

 
0-C     D-L     M-R     S-Z