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Part number
DistributorStockDCManufactureDescription
 
10000  2008  -  -  
 
10000  2008  -  -  
 
621853  12  -  -  
 
621853  12  -  -  
 
621853  12  -  -  
 
10000  2008  -  -  
 
10000  2008  -  -  
 
17657  08/15ROHS/11  TOSHIBA  TO-220/CP/SOT-23  
 
61285  12  -  -  
 
2500  -  HIT  TO-252  
 
38000  2011  HIT  TO-251/252  
 
35000  2016  HITACHI  TO-263/262  
 
5000  -  -  -  
 
324  02  -  TO-263  
 
35000  -  -  TO-263/262  
 
3000  -  -  -  
 
10000  2008  -  -  
 
17657  08/15ROHS/11  TOSHIBA  TO-220/CP/SOT-23  
 
17657  08/15ROHS/11  TOSHIBA  TO-220/CP/SOT-23  
 
61285  12  -  -  
 
17657  08/15ROHS/11  TOSHIBA  TO-220/CP/SOT-23  
 
2756  1316  RENESAS  TO-263  
 
61285  12  -  -  
 
17657  08/15ROHS/11  TOSHIBA  TO-220/CP/SOT-23  
 
10000  2008  -  -  
 
2500  -  HIT  TO-252  
 
61285  12  -  -  
 
12500  2016  HIT/RENESAS  -  
 
10000  2008  -  -  
 
61285  12  -  -  
 
10000  2008  -  -  
 
17657  08/15ROHS/11  TOSHIBA  TO-220/CP/SOT-23  
 
2500  -  HIT  TO-252  
 
61285  12  -  -  
 
12500  2016  TOSHIBAHIBA  -  
 
12179  12/13/04PB  HITACHI  LDPAK/TO/SOT-263  
 
61285  12  -  -  
 
2228  13/14/04PB/05  RENESAS  SOT-263  
 
61285  12  -  -  
 
24000  -  NXP  -  

 

Part information


Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp.

Part numberCircuit descriptionManufacture
2SK2912 -
Category: Discrete - Transistors
Renesas
2SK2912L - -
2SK2912L Silicon N-channel MOSFET High Speed Power Switching Hitachi Semiconductor (acquired by Renesas)
2SK2912S Renesas
2SK2912S Silicon N-channel MOSFET High Speed Power Switching Hitachi Semiconductor (acquired by Renesas)
2SK2912L-E Silicon N Channel MOS FET High Speed Power Switching Renesas
2SK2912STL-E - -
2SK2912S-E 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET. Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0400 ohms ; Package Type: LDPAK-3 ; Number of units in IC: 1 -
2SK2912STL-E - -

 

 
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