Details, datasheet, quote on part number: PDMB50A6
PartPDMB50A6
CategoryDiscrete
DescriptionDevice = Igbt ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Half Bridge ;; Data Sheet(pdf) = _pdmb50a6.pdf ;; Outline(dxf) = Pdmb50a6.dxf ;; Remarks =   ;; = ;; = ;; = ;;
CompanyNihon Inter Electronics (NIEC)
DatasheetDownload PDMB50A6 datasheet
Quote
Find where to buy
 
  
Some Part number from the same manufacture Nihon Inter Electronics (NIEC)
PDMB50B12 Device = IGBT() ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Half Bridge ;; Data Sheet(pdf) = _pdmb50b12.pdf ;; Outline(dxf) = Pdmb50b12.dxf
PDMB600A6 Device = Igbt ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Half Bridge ;; Data Sheet(pdf) = _pdmb600a6.pdf ;; Outline(dxf) = Pdmb600a6.dxf
PDMB75A6
PDMB75B12 Device = IGBT() ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Half Bridge ;; Data Sheet(pdf) = _pdmb75b12.pdf ;; Outline(dxf) = Pdmb75b12.dxf
PDT10012 Device = Scr,diode ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cascaded ;; Data Sheet(pdf) = _pdt10012.pdf ;; Outline(dxf) = Pdh10016.dxf
PDT1008
PDT15012 Device = SCR ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Anti-parallel ;; Data Sheet(pdf) = _pdt15012.pdf ;; Outline(dxf) = Pat15016.dxf
PDT1508
PDT15116 Device = Scr,diode ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cascaded ;; Data Sheet(pdf) = _pdt15116.pdf ;; Outline(dxf) = Pdh15116.dxf
PDT1518
PDT20012 Device = SCR ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Anti-parallel ;; Data Sheet(pdf) = _pdt20012.pdf ;; Outline(dxf) = Pat20016.dxf
PDT2008
PDT20116 Device = Scr,diode ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cascaded ;; Data Sheet(pdf) = _pdt20116.pdf ;; Outline(dxf) = Pdh15116.dxf
PDT2018
PDT3012
PDT308
PDT40012 Device = SCR ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Anti-parallel ;; Data Sheet(pdf) = _pdt40012.pdf ;; Outline(dxf) = Pat40016.dxf
PDT4008
PDT6012 Device = Scr,diode ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cascaded ;; Data Sheet(pdf) = _pdt6012.pdf ;; Outline(dxf) = Pdh10016.dxf
PDT608
PE1008N Device = Diode ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = 3 Phase Half Bridge ;; Data Sheet(pdf) = _pe1008n.pdf ;; Outline(dxf) = Pe1008n.dxf

PT150S16 : Device = Diode ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = 3 Phase Bridge ;; Data Sheet(pdf) = _pt150s12.pdf ;; Outline(dxf) = Pt200s16.dxf ;; Remarks =   ;; = ;; = ;; = ;;

BB25AP-FB : Process Sealed Subminiature Antistatic Pushbuttons

WB15T-DF : Environmentally Sealed Pushbuttons

LB25SGG01-H : Standard Size Pushbuttons

P2023YZ-JB : Internationally Approved Rockers/paddles

P2011NP-EA : Internationally Approved Rockers/paddles

MS13BFA : Miniature Slides

SCB25S15A-2B : Snap Switch Pushbuttons

AB21AB-FB : Process Sealed Subminiature Pushbuttons

M2T22TXW30-G : Process Sealed Miniature Rockers

Same catergory

2SB0939 : VCEO(V) = -60 ;; IC(A) = -8 ;; HFE(min) = 2000 ;; HFE(max) = 10000 ;; Package = N-A1N-G1.

DD160KB120 : Diode Modules. UL;E76102 M Power Diode Module DD160KB Series are designed for various rectifier circuits. DD160KB has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1600V is available for various input voltages. Isolated mounting base Two elements in a package.

DIH-129 : Relays. SPST Photovoltaic Ac/dc N/o Relays. DIH-149, DIH-169 Power MOSFET N/O SPST Photovoltaic AC-DC Relay : Low Level Logic Compatibility Thermal Protection With Hysteresis Optical Isolation to 650VAC Low On Resistance, Low Offset Voltage Meet 28V DC System Surge and Spike Requirements of Mil STD-704. Current Limiting Designed To Meet MIL-R-28750 Y-Level MIL Screening Available : DIH-129,.

MA147 : Marking = MS ;; VR(V) = 80 ;; IF(mA) = 100 ;; IR(nA) = 100 ;; Trr(ns) = 3 ;; Package = SMini3-G1.

ULN2003A : High Current. Darlington Transistor Array. ULQ2003A, ULQ2004A HIGH-VOLTAGE HIGH-CURRENT DARLINGTON The ULN2001A is obsolete TRANSISTOR ARRAY and is no longer supplied. 500-mA-Rated Collector Current (Single Output) High-Voltage Outputs. 50 V Output Clamp Diodes Inputs Compatible With Various Types of Logic Relay-Driver Applications Designed to Be Interchangeable With Sprague ULN2001A Series.

000-7190-30U : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F).

BG5412K : 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Depletion ; V(BR)DSS: 12 volts ; Package Type: ROHS COMPLIANT PACKAGE-6 ; Number of units in IC: 2.

BUP52.MOD : 70 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AE. s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

C0805F102J1RAC : CAPACITOR, CERAMIC, MULTILAYER, 100 V, X7R, 0.001 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1.00E-3 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.

GACE0R1M50V3X5.4TR(13) : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 0.1 uF, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; : Polarized ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Leakage Current: 3 microamps ; ESR: 1.66E6 milliohms ; Mounting Style: Surface Mount Technology ; Operating Temperature:.

MA4CS101BRT3 : SILICON, MIXER DIODE. s: Diode Type: MIXER DIODE ; Diode Applications: Mixer ; Package: SURFACE MOUNT PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2.

MMPN080045 : 200 V, SILICON, PIN DIODE. s: Package: C50 ; Number of Diodes: 1 ; RoHS Compliant: RoHS.

SIHFIBC40GLC : 3.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 1.2 ohms ; Package Type: TO-220, PLASTIC, TO-220, FULLPAK-3 ; Number of units in IC: 1.

2520B102K402N : CAPACITOR, CERAMIC, MULTILAYER, 4000 V, X7R, 0.001 uF, SURFACE MOUNT, 2520. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1.00E-3 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 4000 volts ; Mounting Style: Surface Mount.

 
0-C     D-L     M-R     S-Z