Details, datasheet, quote on part number: PDMB100B12C2
DescriptionIGBT Module Dual 100A 1200v
CompanyNihon Inter Electronics (NIEC)
DatasheetDownload PDMB100B12C2 datasheet
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Features, Applications

Collector-Emitter Voltage Gate - Emitter Voltage Collector Current 1 ms Approximate Weight : 220g

Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Mounting Torque

Module Base to Heat sink Bus Bar to Main Terminals

Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Switching Time

Turn-on Time Fall Time Turn-off Time
Peak Forward Voltage Reverse Recovery Time
Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)

Fig.7- Series Gate Impedance vs. Switching Time (Typical)
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)


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PDT2008 : Device = SCR ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Anti-parallel ;; Data Sheet(pdf) = _pdt2008.pdf ;; Outline(dxf) = Pat2008.dxf ;; Remarks =   ;; = ;; = ;; = ;;

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