Details, datasheet, quote on part number: JDP2S01S
PartJDP2S01S
Category
Description
CompanyToshiba America Electronic Components, Inc.
DatasheetDownload JDP2S01S datasheet
Quote
Find where to buy
 
  
Related products with the same datasheet
JDP2S01U
Some Part number from the same manufacture Toshiba America Electronic Components, Inc.
JDP2S01T VR (v) = 30 ;; Ir (ľA) = 0.1 ;; VF(v) = 0.87 ;; CT(pF) = 0.65 ;; .rs(Typ.) Ohms = 0.65 ;; Package = Tesc ;; Application = Single
SW, Att
JDP2S01U
JDP2S02S
JDP2S04E
JDP4P02U
JDV2S01E VR (v) = 10 ;; Ir (nA) = 3 ;; CT(1) (pF) = 3.15 ;; CT(2) (pF) = 1.57 ;; CT(1)/CT(2) = 2 ;; .rs(Typ.) Ohms = 0.5 ;; Package = Esc ;; Application = UHF Vco
JDV2S01S
JDV2S01U
JDV2S02E VR (v) = 10 ;; Ir (nA) = 3 ;; CT(1) (pF) = 2 ;; CT(2) (pF) = 1 ;; CT(1)/CT(2) = 2 ;; .rs(Typ.) Ohms = 0.6 ;; Package = Esc ;; Application = UHF Vco
JDV2S02S
JDV2S05E VR (v) = 10 ;; Ir (nA) = 3 ;; CT(1) (pF) = 3.85 to 4.55 ;; CT(2) (pF) = 1.94 to 2.48 ;; CT(1)/CT(2) = 1.9 TYP ;; .rs(Typ.) Ohms = 0.3 ;; Package = Esc ;; Application = UHF Vco
JDV2S05S
JDV2S06S VR (v) = 10 ;; Ir (nA) = 3 ;; CT(1) (pF) = 16 ;; CT(2) (pF) = 8 ;; CT(1)/CT(2) = 2 ;; .rs(Typ.) Ohms = 0.27 ;; Package = Sesc ;; Application = UHF Vco
JDV2S07S VR (v) = 10 ;; Ir (nA) = 3 ;; CT(1) (pF) = 4.5 ;; CT(2) (pF) = 2 ;; CT(1)/CT(2) = 2.3 ;; .rs(Typ.) Ohms = 0.42 ;; Package = Sesc ;; Application = UHF Vco
JDV2S08S VR (v) = 10 ;; Ir (nA) = 3 ;; CT(1) (pF) = 18.3 ;; CT(2) (pF) = 6.1 ;; CT(1)/CT(2) = 3.1 ;; .rs(Typ.) Ohms = 0.35 ;; Package = Sesc ;; Application = UHF Vco
JDV2S09S VR (v) = 10 ;; Ir (nA) = 3 ;; CT(1) (pF) = 9.7 to 11.1 ;; CT(2) (pF) = 4.45 to 5.45 ;; CT(1)/CT(2) = 2.1 ;; .rs(Typ.) Ohms = 0.33 ;; Package = Sesc ;; Application = UHF Vco
JDV2S10S VR (v) = 10 ;; Ir (nA) = 3 ;; CT(1) (pF) = 7.3 to 8.4 ;; CT(2) (pF) = 2.75 to 3.4 ;; CT(1)/CT(2) = 2.5 ;; .rs(Typ.) Ohms = 0.35 ;; Package = Sesc ;; Application = UHF Vco
JDV2S10T
JDV2S14E VR (v) = 10 ;; Ir (nA) = 3 ;; CT(1) (pF) = 44 to 49.5 ;; CT(2) (pF) = 19 to 26.5 ;; CT(1)/CT(2) = 2.15 TYP ;; .rs(Typ.) Ohms = 0.4 ;; Package = Esc ;; Application = Tcxo / Vco
JDV3C11
JDV4P08U VR (v) = 10 ;; Ir (nA) = 3 ;; CT(1) (pF) = 17.3 to 19.3 ;; CT(2) (pF) = 5.3 to 6.6 ;; CT(1)/CT(2) = 3 TYP ;; .rs(Typ.) Ohms = 0.3 ;; Package = Usq (4-PIN) ;; Application = UHF Vco

015A4.3 : Diode Silicon Epitaxial Planar Type

TC74HC74AP : TC74HC Series Function = Dual Flip-flop With Preset And Clear ;; Pins = 14

TIM0910-5 : X, Ku-Band Power GaAs IMFETs Frequency Band (GHz) = 9.5-10.5 ;; P1dB (dBm) = 37.5 ;; G1dB (dB) = 7.0 ;; P.A.E. (%) Typ. = 25 ;; VDS (V) = 9 ;; Ids (A) Typ. = 2.0 ;; IM3 (dBc) Typ. = - ;; RTH ( C/W) Typ. = 3.0

TX4939XBG-400 : 64-Bit Risc Microprocessor, Embedded Pci-Based Processor With 90-Nanometer Process Technology The TX4939XBG-400 has multiple on-chip peripheral functions, including an 8/16-bit local bus controller, a highly optimized security engine, serial/parallel video ports, ATA controllers, a DDR SDRAM contr

TLYU114PF : Panel Circuit Indicator

HN1B04F_07 : Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications

2SK3565_06 : Silicon N Channel MOS Type Switching Regulator Applications

TLYH1100B(T11) : Standard LED - SMD 587nm Yellow LED SMD 3.5 x 2.8 » » » LEDs - High Brightness - SMD - Yellow LEDs - High Brightness - SMD - YellowStandard SMD (surface mount device) LED components are often used in indication applications and generally have power levels Specifications: Manufacturer: Toshiba ; Product Category: Standard LED - SM

TK40E06N1,S1X : MOSFET N CH 60V 40A TO-220 U-MOS-H are the 8th generation of high-speed trench-structure MOSFETs. U-MOS-H is a high-efficiency MOSFET series especially designed for use in the secondary side of AC-DC and DC-DC power supplies. Fabricated with the latest trench MOS process and optimized cell design, U-MOS-H achieves excellen

 
0-C     D-L     M-R     S-Z