Details, datasheet, quote on part number: M48T37Y-10MH6TR
PartM48T37Y-10MH6TR
CategoryMemory => SRAM
Description3.3v-5v 256 Kbit 32kb x8 Timekeeper SRAM
CompanyST Microelectronics, Inc.
DatasheetDownload M48T37Y-10MH6TR datasheet
  

 

Features, Applications

INTEGRATED ULTRA-LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY FREQUENCY TEST OUTPUT for REAL TIME CLOCK SOFTWARE CALIBRATION YEAR 2000 COMPLIANT AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WATCHDOG TIMER WRITE PROTECT VOLTAGE (VPFD = Power-Fail Deselect Voltage): M48T37Y: 4.2V VPFD M48T37V: 2.7V VPFD 3.0V

PACKAGING INCLUDES a 44-LEAD SOIC and SNAPHAT TOP (to be Ordered Separately) SOIC PACKAGE PROVIDES DIRECT CONNECTION for a SNAPHAT® TOP which CONTAINS the BATTERY and CRYSTAL MICROPROCESSOR POWER-ON RESET (Valid even during battery back-up mode) PROGRAMMABLE ALARM OUTPUT ACTIVE in the BATTERY BACKED-UP BATTERY LOW FLAG

A0-A14 DQ0-DQ7 RST IRQ/FT WDI G W VCC VSS NC February 2000 Address Inputs Data Inputs / Outputs Power Fail Reset Output (Open Drain) Interrupt / Frequency Test Output (Open Drain) Watchdog Input Chip Enable Output Enable Write Enable Supply Voltage Ground Not connected Internally 1/20

Symbol TA Parameter Grade 1 Ambient Operating Temperature Grade 6 SNAPHAT TSTG T SLD (2) VIO Storage Temperature (VCC Off, Oscillator Off) Lead Solder Temperature for 10 seconds M48T37Y Input or Output Voltages IO PD Supply Voltage M48T37V Output Current Power Dissipation 7 V SOIC to 7 Value to 70 Unit °C V

Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect reliability. 2. Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds).

CAUTION: Negative undershoots below ­0.3V are not allowed on any pin while in the Battery Back-up mode. CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPH AT sockets.

DESCRIPTION The M48T37Y/37V TIMEKEEPER® RAM 32Kb x8 non-volatile static RAM and real time clock. The monolithic chip is available in a special package which provides a highly integrated battery backed-up memory and real time clock solution. The 44 lead 330mil SOIC package provides sockets with gold-plated contacts at both ends for direct connection to a separate SNAPHAT housing containing the battery and crystal. The unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process. Insertion of the SNAPHAT housing after reflow prevents potential battery and crystal damage due to the high temperatures required for device surface-mounting. The SNAPHAT housing is keyed to prevent reverse insertion. The SOIC and battery packages are shipped separately in plastic anti-static tubes or in Tape &Reel form. For the 44 lead SOIC, the battery/crystal package (i.e. SNAPHAT) part number or "M4T32-BR12SH". Caution: Do not place the SNAPHAT battery/crystal top in conductive foam, as this will drain the lithium button-cell battery. As Figure 3 shows, the static memory array and the quartz controlled clock oscillator of the M48T37Y/37V are integrated on one silicon chip.

Mode Deselect Write Read Deselect VCC 3.6V (M48T37V) VSO to VPFD (min) (2) VSO E VIH VIL VIH VIL VIH X DQ0-DQ7 High D IN DOUT High Z High Z High Z Power Standby Active CMOS Standby Battery Back-up Mode

Note: X = VIH or VIL; VSO = Battery Back-up Switchover Voltage. 2. See Table 7 for details.
OSCILLATOR AND CLOCK CHAIN 32,768 Hz CRYSTAL POWER x 8 BiPORT SRAM ARRAY
LITHIUM CELL VOLTAGE SENSE AND SWITCHING CIRCUITRY VPFD

 

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