Details, datasheet, quote on part number: P6V8B
CategoryDiscrete => Diodes & Rectifiers => Zener Diodes
DescriptionSilicon Planar Power Zener Diodes
CompanySemtech Corporation
DatasheetDownload P6V8B datasheet
Some Part number from the same manufacture Semtech Corporation
P7V5B Silicon Planar Power Zener Diodes
PF0 Fast Recovery Axial Rectifier, 800 V-1000 V, Io=1.8 a
PF20 Fast Recovery Axial Rectifier, 2000 V, Io=0.10 a
PF75 Fast Recovery Axial Rectifier, 6000 V, Io=0.50 a
PF8 Fast Recovery Axial Rectifier, 800 V-1000 V, Io=1.8 a
PFF0 Superfast Axial Rectifier, 200 V-1000 V, Io=1.25 a
PFF50 Superfast Axial Rectifier, 5000 V, Io=0.36 a
PFF6 Superfast Axial Rectifier, 200 V-1000 V, Io=1.25 a
PFM50 Fast Recovery Axial Rectifier, 5000 V-7500 V, Io=0.092 a
PFR0 Fast Recovery Axial Rectifier, 1000 V, Io=01.6 a
PHP120 7.500 & 15.000 Watt TVS Module
PIP/PHP8.4 7.5k & 15k Watt TVS Module
PIP120 7.500 & 15.000 Watt TVS Module

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SLVE2.8.TG : 300 W, BIDIRECTIONAL, SILICON, TVS DIODE Specifications: Configuration: Single ; Direction: Bidirectional ; Pin Count: 4 ; Number of Diodes: 1 ; VBR: 3.3 volts

Same catergory

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2SB1588 : . Symbol VCBO VCEO VEBO PC Tj Tstg +150 (Ta=25°C) Unit °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions V pF Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) Application : Audio, Series Regulator and General Purpose VCC (V) 10 IC (A) ­7 VBB1 (V) ­10 VBB2 (V) 5 IB1 (mA) ­7 IB2 (mA) 7 ton (µs) 0.8typ tstg (µs) 3.0typ.

2W06G : 2A Bridge Rectifier. Glass passivated junction. Ideal for printed circuit board. Reliable low cost construction technique 005G Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Rectified Forward Current, = 50°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating.

D649S : . Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage Stoßspitzensperrspannung non-repetitive peak reverse voltage Durchlaßstrom-Grenzeffektivwert RMS forward current Dauergrenzstrom mean forward current Stoßstrom-Grenzwert surge foward current Durchlaßspannung forward voltage Schleusenspannung.

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KSH122I : SOT/Surface Mount. NPN Silicon Darlington Transistor. High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, Suffix) Electrically Similar to Popular TIP122 Complement to KSH127 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage.

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STB200N6F3TRL : 120 A, 60 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0035 ohms ; Package Type: TO-263, ROHS COMPLIANT, TO-263, D2PAK-3 ; Number of units in IC: 1.

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