Details, datasheet, quote on part number: P6V2B
PartP6V2B
CategoryDiscrete => Diodes & Rectifiers => Zener Diodes
DescriptionSilicon Planar Power Zener Diodes
CompanySemtech Corporation
DatasheetDownload P6V2B datasheet
  
Some Part number from the same manufacture Semtech Corporation
P6V8B Silicon Planar Power Zener Diodes
P7V5B
P8V2B
P9V1B
PF0 Fast Recovery Axial Rectifier, 800 V-1000 V, Io=1.8 a
PF20 Fast Recovery Axial Rectifier, 2000 V, Io=0.10 a
PF75 Fast Recovery Axial Rectifier, 6000 V, Io=0.50 a
PF8 Fast Recovery Axial Rectifier, 800 V-1000 V, Io=1.8 a
PFF0 Superfast Axial Rectifier, 200 V-1000 V, Io=1.25 a
PFF50 Superfast Axial Rectifier, 5000 V, Io=0.36 a
PFF6 Superfast Axial Rectifier, 200 V-1000 V, Io=1.25 a
PFM50 Fast Recovery Axial Rectifier, 5000 V-7500 V, Io=0.092 a
PFR0 Fast Recovery Axial Rectifier, 1000 V, Io=01.6 a
PHP120 7.500 & 15.000 Watt TVS Module
PHP440
PHP500
PIP/PHP8.4 7.5k & 15k Watt TVS Module
PIP120 7.500 & 15.000 Watt TVS Module
PIP440
PIP500
PixiPointZPS/2UR7HCPXZ-P44

1N6465 : QPL 500 Watt Axial Leaded TVS

BZX55/C15 : Silicon Planar Zener Diodes

BZX55/C6V8 : Silicon Planar Zener Diodes

SCBAR2F : Fast Recovery 1-Phase Full-wave Bridge, 50 V-400 V, 50 a

7565DX103Z10 : HIGH Voltage Capacitors Monolithic Ceramic TYPE

SMDA15C-7.TB : Bidirectional TVS Array for Protection of Five Lines

EDGE6436 : Per-pin Electronics Companion DAC

5550DX103K6 : HIGH Voltage Capacitors Monolithic Ceramic TYPE

7V5BSA : Silicon Planar Zener Diodes

RLZ36 : Silicon Epitaxial Planar Zener Diodes

SX1276DVK1KAS : RF Development Tools SX1276DVK 490/915MHZ Semtech SX1276 Low Power Long Range Transceiver features the LoRa long range modem that provides ultra-long range spread spectrum communication and high interference immunity whilst minimizing current consumption. The SX1276 achieves a sensitivity of over -148dBm using Semtech's patented LoRa mod

Same catergory

2SC5894 : Small Signal Bip-TRSs for High Frequency Amplifier. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

409DMQ...Series : >100 Amp. Schottky Rectifier 400 Amp. IF(AV) Rectangular waveform VRRM IFSM 5 µs sine 200Apk, TJ=125°C (per leg) range A V The 409DMQ Schottky rectifier doubler module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation 175 °C junction temperature. Typical applications are in high current switching power.

FSM101 : Technical s of Surface Mount Fast Recovery Rectifier. TECHNICAL S OF SURFACE MOUNT FAST RECOVERY RECTIFIER ldeal for surface mounted applications Low leakage current Fast switching for high efficiency Glass passivated junction * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant *Terminals: Solder plated solderable per MIL-STD-202E, Method 208 guaranteed * Polarity: Color band denotes cathode.

J109 : N-channel Switch. This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 58. Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VDG VGS IGF TJ, Tstg Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value Units mA °C * These.

KBL005 : 4.0 Ampere Silicon Bridge Rectifiers. Ideal for printed circuit board. Reliable low cost construction. High surge current capability. UL certified, UL #E96005. 005 Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Rectified Forward Current, = 50°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature.

MA2ZV02 : Marking = 7Y ;; VR(V) = 6 ;; IF(mA) = ;; Package = SMini2-G1. Good linearity and large capacitance-ratio - VR relation Small series resistance rD S-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating to +150 Unit V °C Parameter Reverse current (DC) Diode capacitance.

NTE329 : Silicon NPN Transistor. RF Power Amplifier, CB.. : The NTE329 is designed primarily for use in large­signal output amplifier stages. Intended for use in Citizen­Band communications equipment operating to 30MHz. High breakdown voltages allow a high percentage of up­modulation in AM circuits. : D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10dB Efficiency = 70% Typical Absolute.

IRF6613 : 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package. Application Specific MOSFETs Ideal for Synchronous Rectification in Isolated DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible with existing Surface Mount Techniques Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) MX MT The IRF6613 combines the latest HEXFET®.

BUX97.MOD : 6 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

CC4-0805CG102K500PF3 : CAP,CERAMIC,1NF,50VDC,10% -TOL,10% +TOL,CG TC CODE,-30,30PPM TC. s: Dielectric: Ceramic Composition.

FHD1664 : 1000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: SOT89, SOT-89, 3 PIN.

GST12101.01MOHMS0.5%100PPM : RES,RADIAL,THICK FILM,1.01M OHMS,1KWV,.5% +/-TOL,-100,100PPM TC,1204 CASE. s: Category / Application: General Use ; Standards and Certifications: RoHS.

RV20N20SB102 : RESISTOR, POTENTIOMETER, CARBON FILM, 1 TURN(S), 0.25 W, 1000 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Mounting / Packaging: Panel Mount (Bushing), ROHS COMPLIANT ; Resistance Range: 1000 ohms ; Tolerance: 20 +/- % ; Operating Temperature: -10 to 85 C (14 to 185 F) ; Standards and Certifications: RoHS.

V130LTPX10A : RESISTOR, VOLTAGE DEPENDENT, 175 V, 38 J, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Operating DC Voltage: 175 volts ; Operating Temperature: -55 to 125 C (-67 to 257 F) ; Standards and Certifications: RoHS.

224CMQ035 : 110 A, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 110000 mA ; Package: PLASTIC, PRM4, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

 
0-C     D-L     M-R     S-Z