Details, datasheet, quote on part number: K6R4004C1A-E
PartK6R4004C1A-E
CategoryMemory => SRAM => Async. SRAM => 4 Mb => -> Fast SRAM
Title-> Fast SRAM
DescriptionDescription = K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 15,17,20 ;; Operating Temperature = C,e,i ;; Operating Current(mA) = 150 ;; Standby Current(mA) = 10 ;; Package = 32SOJ ;; Production Status = Eol ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload K6R4004C1A-E datasheet
  

 

Features, Applications

1MKx4 Bit (with OE) High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Ranges.

Rev No. Rev. 0.0 Rev. 0.5 History Initial release with Design Target. Release to Preliminary Data Sheet. 0.1. Replace Design Target to Preliminary. 0.2. Delete 12ns part but add 17ns part. 0.3. Relax D.C and A.C parameters and insert new parameter(Icc1) with the test condition. 0.3.1. Insert Icc1 parameter with the test condition as address is increased with binary count. 0.3.2. Relax D.C and A.C parameters. Previous spec. Relaxed spec. Items - /20ns part) (15/17/20ns part) Icc /160mA 200/195/190mA tCW /12ns 12/13/14ns tAW /12ns 12/13/14ns tWP(OE=H) /14ns 15/17/20ns tDW 8/ 9/10ns Release to Final Data Sheet. 1.1. Delete Preliminary. 1.2. Delete Icc1 parameter with the test condition. 1.3. Update D.C parameters. Previous spec. Updated spec. Items (15/17/20ns part) (15/17/20ns part) Icc 150/145/140mA 1.4. Add the test condition for VOH1 with 25C. 1.5. Add timing diagram to define tWP as (Timing Wave Form of Write Cycle(CS=Low fixed). 2.1 Add extended and industrial temperature range parts. Feb. 25th, 1998 Final Draft Data Jun. 14th, 1996 Sep. 16th, 1996 Remark Design Target Preliminary

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

FEATURES

Fast Access Time 15,17,20ns(Max.) Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating : 140mA(Max.) Single 5.0V10% Power Supply TTL Compatible Inputs and Outputs I/O Compatible with 3.3V Device Fully Static Operation - No Clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration Standard Pin Configuration : 32-SOJ-400

The a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4004C1A is packaged a 400 mil 32-pin plastic SOJ.

K6R4004C1A-E15/E17/E20 K6R4004C1A-I15/I17/I20 Commercial Temp. Extended Temp. Industrial Temp.

Pin Name A19 WE Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+5.0V) Ground No Connection

Parameter Voltage on Any Pin Relative V SS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Extended Industrial Symbol VIN, VOUT VCC PD TSTG TA Rating to 85 Unit W C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min Typ 5.0 0 Max VCC+0.5*** 0.8 Unit

* The above parameters are also guaranteed at extended and industrial temperature ranges. VIL(Min) = -2.0V a.c(Pulse Width 10ns) for I 20mA. VIH (Max) = VCC + 2.0V a.c (Pulse Width 10ns) for I 20mA

Parameter Input Leakage Current Output Leakage Current Operating Current Symbol ILI ILO ICC VIN=VSS to VCC CS=VIH or OE=VIH or WE=VIL VOUT=VSS to VCC Min. Cycle, 100% Duty CS=VIL, VIN=VIH or VIL, 17ns 20ns Standby Current ISB ISB1 Output Low Voltage Level Output High Voltage Level VOL VOH Min. Cycle, CS=VIH IOL=8mA IOH=-4mA Test Conditions Min -2 2.4 Max mA V Unit A mA

* The above parameters are also guaranteed at extended and industrial temperature ranges.

 

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