Details, datasheet, quote on part number: K6R3024V1D-HC10
PartK6R3024V1D-HC10
CategoryMemory => SRAM => Async. SRAM => 3 Mb => Fast SRAM
TitleFast SRAM
DescriptionDescription = K6R3024V1D 128K X 24 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx24 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 10 ;; Operating Temperature = C ;; Operating Current(mA) = 150 ;; Standby Current(mA) = 40,15 ;; Package = 119PBGA ;; Production Status = Mass Production ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload K6R3024V1D-HC10 datasheet
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Features, Applications

128Kx24 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 0.3 History Design-In Specification Pin Configurations Modified ( page 2 ) Add Timing Diagram page Modified Read Cycle Timing(2) 1) Version change from D 2) Cin from pF 3) Icc from to 170mA for 9ns products from to 150mA for 10ns products from to 130mA for 12ns products 4) Isb ( TTL ) from 40 mA for all products ( CMOS ) from 15 mA for all products 5) Part number change from to -09 for 9ns products Change write parameter( tDW) from at -10 Final Specification Release Draft Data Dec. 05. 2000 Mar. 07. 2001 April. 04.2001 June. 23.2001 Remark Design-In Preliminary

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

FEATURES

Fast Access Time 9,10,12ns Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 15mA(Max.) Operating : 130mA(Max.) Single 3.3V Power Supply TTL Compatible Inputs and Outputs Fully Static Operation - No Clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration 119(7x17)Pin Ball Grid Array Package(14mmx22mm) Operating in Commercial and Industrial Temperature range.

The a 3,145,728-bit high-speed Static Random Access Memory organized as 131,072 words by 24 bits. The K6R3024V1D uses 24 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG' s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The is a three megabit static RAM constructed on an multilayer laminate substrate using three x 8 static RAMS encapsulated in a Ball Grid Array(BGA).

Pin Name A16 WE Pin Function Addresses Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+3.3v) Ground No Connection

Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC Pd TSTG TA Rating to 85

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Mode Standby Read Write Outputs Disabled

Parameter Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min 2.0 -0.3** Typ 3.3 Max VCC+0.3*** 0.8 Unit V

* The above parameters are also guaranteed at industrial temperature range. V IL(Min) = -2.0V a.c(Pulse Width 8ns) for I 20mA. VIH (Max) = VCC + 2.0V a.c (Pulse Width 8ns) for I 20mA.


 

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