Details, datasheet, quote on part number: K6R3024V1D-09
PartK6R3024V1D-09
CategoryMemory => SRAM => Async. SRAM => 3 Mb => Fast SRAM
TitleFast SRAM
DescriptionDescription = K6R3024V1D 128K X 24 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx24 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 10 ;; Operating Temperature = C ;; Operating Current(mA) = 150 ;; Standby Current(mA) = 40,15 ;; Package = 119PBGA ;; Production Status = Mass Production ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload K6R3024V1D-09 datasheet
  

 

Features, Applications

128Kx24 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 0.3 History Design-In Specification Pin Configurations Modified ( page 2 ) Add Timing Diagram page Modified Read Cycle Timing(2) 1) Version change from D 2) Cin from pF 3) Icc from to 170mA for 9ns products from to 150mA for 10ns products from to 130mA for 12ns products 4) Isb ( TTL ) from 40 mA for all products ( CMOS ) from 15 mA for all products 5) Part number change from to -09 for 9ns products Change write parameter( tDW) from at -10 Final Specification Release Draft Data Dec. 05. 2000 Mar. 07. 2001 April. 04.2001 June. 23.2001 Remark Design-In Preliminary

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

FEATURES

Fast Access Time 9,10,12ns Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 15mA(Max.) Operating : 130mA(Max.) Single 3.3V Power Supply TTL Compatible Inputs and Outputs Fully Static Operation - No Clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration 119(7x17)Pin Ball Grid Array Package(14mmx22mm) Operating in Commercial and Industrial Temperature range.

The a 3,145,728-bit high-speed Static Random Access Memory organized as 131,072 words by 24 bits. The K6R3024V1D uses 24 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG' s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The is a three megabit static RAM constructed on an multilayer laminate substrate using three x 8 static RAMS encapsulated in a Ball Grid Array(BGA).

Pin Name A16 WE Pin Function Addresses Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+3.3v) Ground No Connection

Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC Pd TSTG TA Rating to 85

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Mode Standby Read Write Outputs Disabled

Parameter Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min 2.0 -0.3** Typ 3.3 Max VCC+0.3*** 0.8 Unit V

* The above parameters are also guaranteed at industrial temperature range. V IL(Min) = -2.0V a.c(Pulse Width 8ns) for I 20mA. VIH (Max) = VCC + 2.0V a.c (Pulse Width 8ns) for I 20mA.


 

Related products with the same datasheet
K6R3024V1D-10
K6R3024V1D-12
K6R3024V1D-HC09
K6R3024V1D-HC10
K6R3024V1D-HC12
K6R3024V1D-HI09
K6R3024V1D-HI10
K6R3024V1D-HI12
Some Part number from the same manufacture Samsung Semiconductor, Inc.
K6R3024V1D-10 Description = K6R3024V1D 128K X 24 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx24 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 10 ;; Operating Temperature = C ;; Operating Current(mA) = 150 ;; Standby
K6R4004C1A Description = K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 15,17,20 ;; Operating Temperature = C,e,i ;; Operating Current(mA) = 150 ;; Standby
K6R4004C1B Description = K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,i ;; Operating Current(mA) = 195 ;; Standby
K6R4004C1C Description = K6R4004C1C 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,e,i ;; Operating Current(mA) = 160,150,140
K6R4004C1D Description = K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10 ;; Operating Temperature = C ;; Operating Current(mA) = 65 ;; Standby Current(mA)
K6R4004C1D-JCI10 1mx4 Bit High Speed Static RAM ( 5.0v Operating ) . Operated at Commercial And Industrial Temperature Ranges.
K6R4004V1B Description = K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,i ;; Operating Current(mA) = 185 ;; Standby
K6R4004V1C Description = K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,i,l,p ;; Operating Current(mA) = 150,140,130
K6R4004V1D Description = K6R4004V1D 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 8,10 ;; Operating Temperature = C ;; Operating Current(mA) = 80,65 ;; Standby
K6R4004V1D-JCI08/10 1mx4 Bit High Speed Static RAM ( 5.0v Operating ) . Operated at Commercial And Industrial Temperature Ranges.
K6R4004V1D-JI08 Description = K6R4004V1D 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 8,10 ;; Operating Temperature = C ;; Operating Current(mA) = 80,65 ;; Standby
K6R4008C1A Description = K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ;; Organization = 512Kx8 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 15,17,20 ;; Operating Temperature = C,e,i ;; Operating Current(mA) = 170 ;; Standby

K4S161622E-TC55 : Description = K4S161622E 512K X 16Bit X 2 Banks Synchronous DRAM ;; Organization = 1Mx16 ;; Bank/ Interface = 2B/LVTTL ;; Refresh = 2K/32ms ;; Speed = 60,70,80,10 ;; Package = 50TSOP2 ;; Power = C,l,i,p,e,n ;; Production Status = Mass Production ;; Comments = -

KS88C01632 : 8-bit Single-chip CMOS Microcontroller.

M366F1680BJ2 : Unbuffered DIMM Description = M366F1680BJ2 16Mx64 DRAM Dimm Using 16Mx4,4K&8K Refresh, 3.3V,EDO Mode Without Buffer ;; Density(MB) = 128 ;; Organization = 16Mx64 ;; Mode = Edo ;; Refresh = 8K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (16Mx4)*16+EEPROM ;; Production Status = Eol ;; Commen

M390S1723CTU-C75 : Registered DIMM Description = M390S1723CTU 16Mx72 Sdram Dimm With PLL & Register Based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75,1H,1L ;; #of Pin = 168 ;; Power = C ;; Component Composition

MD18R162GAF0-CN9 : x32 RIMM Description = MD18R162GAF0 (16Mx18)*4(8/16)pcs RIMM(TM) Module Based on 288Mb A-die, 32s Banks,16K/32ms Ref, 2.5V ;; Density(MB) = 512 ;; Organization = 128Mx36 ;; Component Composition = 288M(2nd)x16 ;; Voltage(V) = 2.5 ;; Refresh = 16K/32ms ;; Speed(MHz)/ TRAC(ns) = 800-40,1066-32 ;; #of Pin = 232

M368L2923DUN-CB3 : DDR Sdram Unbuffered Module 184pin Unbuffered Module Based on 512mb D-die with 64/72-bit Non Ecc/ecc 66 Tsop-ii with Pb-free (rohs Compliant)

KA2249 : FM Front END FOR Portable Radio

KM44C256A-8 : 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode

AT-LC-U-M5-07-C : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB

AT-SC-A-SM-14-D : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB

K4H560838E-VLB30 : 32M X 8 DDR DRAM, 0.75 ns, PBGA60 Specifications: Memory Category: DRAM Chip ; Density: 268435 kbits ; Number of Words: 32000 k ; Bits per Word: 8 bits ; Package Type: FBGA-60 ; Pins: 60 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 0.7500 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)

M390S5658BTU-C7A : 256M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 Specifications: Memory Category: DRAM Chip ; Density: 19327353 kbits ; Number of Words: 256000 k ; Bits per Word: 72 bits ; Package Type: DIMM-168 ; Pins: 168 ; Supply Voltage: 3.3V ; Access Time: 5.4 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)

 
0-C     D-L     M-R     S-Z