Details, datasheet, quote on part number: K6R1016V1D-J
PartK6R1016V1D-J
CategoryMemory => SRAM => Async. SRAM => 1 Mb => Fast SRAM
TitleFast SRAM
DescriptionDescription = K6R1016V1D 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 8,10 ;; Operating Temperature = C,i ;; Operating Current(mA) = 80,65 ;; Standby Current(mA) = 20,5 ;; Package = 44SOJ,44TSOP2,48TBGA ;; Production Status = Mass Production ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload K6R1016V1D-J datasheet
  

 

Features, Applications

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document. Speed bin modify Current modify 1. Delete 12ns speed bin. 2. Change Icc for Industrial mode. Item Previous 8ns 100mA ICC(Industrial) 85mA 1. Add tBA,tBLZ,tBHZ,tBW AC parematers. 1. Correct read cycle timing diagram(2). Draft Data May. 11. 2001 June. 18. 2001 September. 9. 2001 December. 18. 2001 Current 90mA 75mA February. 14. 2002 June. 19. 2002 Final Remark Preliminary Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

PKG C : Commercial Temperature ,Normal Power Range I : Industrial Temperature ,Normal Power Range Temp. & Power

FEATURES

Fast Access Time 8,10ns(Max.) Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R1016V1D-10: 65mA(Max.) Single 3.3V Power Supply TTL Compatible Inputs and Outputs Fully Static Operation - No Clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration Data Byte Control: LB: I/O1~ I/O 8, UB: I/O9~ I/O16 Standard Pin Configuration: 7.0mm ) with 0.75mm ball pitch Operating in Commercial and Industrial Temperature range.

The a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016V1D is packaged 400mil 44-pin plastic SOJ or TSOP2 forward or 48-TBGA.

Pin Name Data Cont. Data Cont. Gen. CLK

Pin Function Address Inputs Write Enable Chip Select Output Enable Lower-byte Control(I/O1~I/O8) Upper-byte Control(I/O9~I/O16) Data Inputs/Outputs Power(+3.3V) Ground No Connection


 

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