Details, datasheet, quote on part number: K6R1016V1C-12
PartK6R1016V1C-12
CategoryMemory => SRAM => Async. SRAM => 1 Mb => Fast SRAM
TitleFast SRAM
DescriptionDescription = K6R1016V1C 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,i ;; Operating Current(mA) = 105,95,93 ;; Standby Current(mA) = 5 ;; Package = 44SOJ,44TSOP2,48FPBGA ;; Production Status = Eol ;; Comments = Converted Into K6R1016V1D
CompanySamsung Semiconductor, Inc.
DatasheetDownload K6R1016V1C-12 datasheet
  

 

Features, Applications

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to Final Data Sheet. 1.1. Delete Preliminary. 1.2. Changed DC characteristics. Item ICC 15ns 20ns Added 48-fine pitch BGA. Changed device part name for FP-BGA. Item Previous Symbol Z ex) K6R1016V1C-Z K6R1016V1C-F Changed device ball name for FP-BGA. Previous I/O16 1. Added 10ns speed for FP-BGA only. 2. Changed Standby Current. Item Previous Standby 0.3mA 3. Added Data Retention Characteristics. Draft Data Aug. 5. 1998 Sep. 7. 1998 Remark Preliminary Final

Added 10ns speed for all / 48FPBGA) Supply Voltage Change 1. Only 10ns Bin 3.6V 2. The Rest Bin 3.6V V IH/VIL Change Item V IL Previous Min 2.0 -0.5 Max CC+0.5 0.8 Changed Min Max -0.3 0.8

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

FEATURES

Fast Access Time 10,12,15ns(Max.) Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) 5mA(Max.) 0.5mA(Max.) L-ver. only Operating K6R1016V1C-10: 105 mA(Max.) K6R1016V1C-15: 93mA(Max.) Single 3.3V Power Supply TTL Compatible Inputs and Outputs Fully Static Operation - No Clock or Refresh required Three State Outputs 2V Minimum Data Retention: L-ver. only Center Power/Ground Pin Configuration Data Byte Control: LB: I/O8 , UB: I/O 9~ I/O16 Standard Pin Configuration: K6R1016V1C-F: 48-Fine pitch BGA with 0.75 Ball pitch

The a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNG s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016V1C is packaged 400mil 44-pin plastic SOJ or TSOP2 forward or 48-Fine pitch BGA.

Pin Name Pin Function Address Inputs Write Enable Chip Select Output Enable Lower-byte Control(I/O 1~I/O 8) Upper-byte Control(I/O 16 ) Data Inputs/Outputs Power(+3.3V) Ground No Connection Data Cont. Data Cont. Gen. CLK

Parameter Voltage on Any Pin Relative V SS Voltage V CC Supply Relative V SS Power Dissipation Storage Temperature Commercial Operating Temperature Industrial Symbol V IN, V OUT CC Pd TSTG TA Rating to 85 Unit W C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter Supply Voltage Supply Voltage Ground Input High Voltage Input Low Voltage Symbol V CC

(1) For K6R1016V1C-10 only. (2) For all speed grades except K6R1016V1C-10. (3) VIH (Max) + 2.0V a.c(Pulse Width 8ns) for 20mA (4) VIL (Min) = -2.0V a.c(Pulse Width 8ns) for I 20 mA.


 

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