Details, datasheet, quote on part number: K6R1016V1A-I12
PartK6R1016V1A-I12
CategoryMemory => SRAM => Async. SRAM => 1 Mb => Fast SRAM
TitleFast SRAM
DescriptionDescription = K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 12,15,20 ;; Operating Temperature = C,i ;; Operating Current(mA) = 170 ;; Standby Current(mA) = 5 ;; Package = 44SOJ,44TSOP2 ;; Production Status = Eol ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload K6R1016V1A-I12 datasheet
  

 

Features, Applications

64Kx16 High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to final Data Sheet. 2.1. Delete Preliminary. Add Low Power Product and update D.C parameters. 3.1. Add Low Power Products with Isb1=0.5mA and Data Retention Mode(L-ver. only). 3.2. Update D.C parameters. Previous spec. Updated spec. Items (12/15/17/20ns part) (12/15/17/20ns part) Icc 200/190/180/170mA 170/165/165/160mA Isb 10mA 5mA Add Industrial Temperature Range parts. 4.1. Add Industrial Temperature Range parts with the same parameters as Commercial Temperature Range parts. 4.1.1. Add K6R1016V1A parts for Industrial Temperature Range. 4.1.2. Add ordering information. 4.1.3. Add the condition for operating at Industrial Temp. Range. 4.2. Add timing diagram to define tWP1 as (Timing Wave Form of Write Cycle(OE=Low fixed). 5.1. Delete L-version. 5.2. Delete Data Retention Characteristics and Wavetorm. 5.3. Delete 17ns Part. 5.4. Add Capacitive load of the test environment in A.C test load. Draft Data Jan. 18th, 1995 Apr. 22th, 1995 Remark Design Target Preliminary

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

FEATURES

Fast Access Time 15, 20ns(Max.) Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating : 160mA(Max.) Single 3.3 0.3V Power Supply TTL Compatible Inputs and Outputs Fully Static Operation - No Clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration Data Byte Control LB:I/O1~I/O8, UB:I/O9~I/O16 Standard Pin Configuration : 44-TSOP2-400BF

The a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1A uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016V1A is packaged 400mil 44-pin plastic SOJ or TSOP2 forward.

Pin Name A15 WE Pin Function Address Inputs Write Enable Chip Select Output Enable Lower-byte Control(I/O1~I/O8) Upper-byte Control(I/O9~I/O16) Data Inputs/Outputs Power(+3.3V) Ground No Connection

Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC PD TSTG TA Rating to 85 Unit W C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min Typ 3.3 0 Max 3.6 0 VCC 0.3*** 0.8 Unit

* The above parameters are also guaranteed at industrial temperature range. VIL(Min) = -2.0V a.c(Pulse Width 10ns) for I 20mA. VIH(Max) = VCC + 2.0V a.c (Pulse Width 10ns) for I 20mA.

Parameter Input Leakage Current Output Leakage Current Operating Current SymILI ILO ICC Test Conditions VIN = VSS to VCC CS=VIH or OE=VIH or WE=VIL VOUT=VSS to VCC Min. Cycle, 100% Duty CS=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, CS=VIH 15ns 20ns Standby Current ISB ISB1 Output Low Voltage Level Output High Voltage Level VOL VOH Min -2 2.4 Max mA V Unit A mA

* The above parameters are also guaranteed at industrial temperature range.

 

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