Details, datasheet, quote on part number: K6R1016C1D-12
PartK6R1016C1D-12
CategoryMemory => SRAM => Async. SRAM => 1 Mb => Fast SRAM
TitleFast SRAM
DescriptionDescription = K6R1016C1D 64K x1 6 Bit High-speed CMOS Static RAM(5.0V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10 ;; Operating Temperature = C,i ;; Operating Current(mA) = 65 ;; Standby Current(mA) = 5 ;; Package = 44SOJ,44TSOP2 ;; Production Status = Mass Production ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload K6R1016C1D-12 datasheet
  

 

Features, Applications

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

Rev. No. Rev. History Initial release with Preliminary. Page 4, DC operation condition modify Current modify 1. Delete 15ns speed bin. 2. Change Icc for Industrial mode. Item Previous 10ns 85mA ICC(Industrial) 75mA 1. Final datasheet release. 2. Correct read cycle timing diagram(2). Draft Data June. 8. 2001 June. 16. 2001 September. 9. 2001 December. 18.2001 Current 75mA 65mA Remark Preliminary

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

PKG C : Commercial Temperature ,Normal Power Range I : Industrial Temperature ,Normal Power Range Temp. & Power

FEATURES

Fast Access Time 10,12(Max.) Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating : 55mA(Max.) Single 5.0V10% Power Supply TTL Compatible Inputs and Outputs I/O Compatible with 3.3V Device Fully Static Operation - No Clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration Data Byte Control: LB: I/O1~ I/O 8, UB: I/O9~ I/O16 Standard Pin Configuration: 7.0mm ) with 0.75 ball pitch Operating in Commercial and Industrial Temperature range.

The a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016C1D is packaged 400mil 44-pin plastic SOJ or TSOP2 forward or 48-TBGA.

Pin Name Data Cont. Data Cont. Gen. CLK

Pin Function Address Inputs Write Enable Chip Select Output Enable Lower-byte Control(I/O1~I/O8) Upper-byte Control(I/O9~I/O16) Data Inputs/Outputs Power(+5.0V) Ground No Connection


 

Related products with the same datasheet
K6R1016C1D-10
K6R1016C1D-J
K6R1016C1D-T
Some Part number from the same manufacture Samsung Semiconductor, Inc.
K6R1016C1D-J Description = K6R1016C1D 64K x1 6 Bit High-speed CMOS Static RAM(5.0V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10 ;; Operating Temperature = C,i ;; Operating Current(mA) = 65 ;; Standby
K6R1016V1A Description = K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 12,15,20 ;; Operating Temperature = C,i ;; Operating Current(mA)
K6R1016V1B Description = K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 8,10,12 ;; Operating Temperature = C,i ;; Operating Current(mA)
K6R1016V1C Description = K6R1016V1C 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,i ;; Operating Current(mA)
K6R1016V1D Description = K6R1016V1D 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 8,10 ;; Operating Temperature = C,i ;; Operating Current(mA)
K6R3024V1D Description = K6R3024V1D 128K X 24 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx24 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 10 ;; Operating Temperature = C ;; Operating Current(mA) = 150 ;; Standby
K6R4004C1A Description = K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 15,17,20 ;; Operating Temperature = C,e,i ;; Operating Current(mA) = 150 ;; Standby
K6R4004C1B Description = K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,i ;; Operating Current(mA) = 195 ;; Standby
K6R4004C1C Description = K6R4004C1C 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,e,i ;; Operating Current(mA) = 160,150,140

K7N803245B : NtRAM(FT & PP) Description = K7N803245B 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAM™ ;; Organization = 256Kx32 ;; Operating Mode = SPB ;; VDD(V) = 2.5 ;; Access Time-tCD(ns) = 3.5,3.8,4.2 ;; Speed-tcyc (MHz) = 167,133 ;; I/o Voltage(V) = 2.5 ;; Package = 100TQFP ;; Production Status = Mass Production ;;

S3C7212 : S3C7(KS57) Series Description = S3C70F4 Single-chip CMOS Microcontroller ;; ROM(KB) = 4 ;; RAM Nibble = 512 ;; I/o Pins = 24 ;; Interrupt (Int/Ext) = 3/2 ;; Timer/counters = BT/WT/8TC ;; Sio = Yes ;; LCD (Seg/Com) = - ;; ADC (BitxCh) = Comx4 ;; PWM(BitxCh) = - ;; Max. OSC.Freq. (MHz) = 6 ;; VDD(V) = 1.8~5.5 ;; Other

K4H563238D-TCA0 : 128mb DDR Sdram

K4S641632H-UL60 : 1M x 16bit x 4 Banks Mobile Sdram in 54fbga

KFG1216U2M-DED : Flash Memory

AT-FC-A-M6-02-A : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB

AT-LC-U-SM-01-B : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB

CL10J104KA8NNNC : CAPACITOR, CERAMIC, MULTILAYER, 25 V, B, 0.1 uF, SURFACE MOUNT, 0603 Specifications: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mount Technology ; Op

K8S1115EBC-DC1D0 : 32M X 16 FLASH 1.8V PROM, 100 ns, PBGA64 Specifications: Memory Category: Flash, PROM ; Density: 536871 kbits ; Number of Words: 32000 k ; Bits per Word: 16 bits ; Package Type: 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 ; Pins: 64 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Access Time: 100 ns ; Operating Temperature: 0 t

 
0-C     D-L     M-R     S-Z