Details, datasheet, quote on part number: K6R1016C1C-I12
PartK6R1016C1C-I12
CategoryMemory => SRAM => Async. SRAM => 1 Mb => Fast SRAM
TitleFast SRAM
DescriptionDescription = K6R1016C1C 64K X 16 Bit High-speed CMOS Static RAM ;; Organization = 64Kx16 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,i ;; Operating Current(mA) = 105,95,93 ;; Standby Current(mA) = 5 ;; Package = 44SOJ,44TSOP2,48FPBGA ;; Production Status = Eol ;; Comments = Converted Into K6R1016C1D
CompanySamsung Semiconductor, Inc.
DatasheetDownload K6R1016C1C-I12 datasheet
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Features, Applications

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with preliminary. Relax DC characteristics. Item ICC 15ns 20ns Add 48-fine pitch BGA. Changed device part name for FP-BGA. Item Previous Symbol Z ex) K6R1016C1C-Z K6R1016C1C-F Changed device ball name for FP-BGA. Previous ~ I/O16 Added Data Retention Characteristics. Add 10ns part. Delete 20ns speed bin Draft Data Aug. 5. 1998 Sep. 7. 1998 Previous 88mA 85mA Changed 93mA 90mA Sep. 17. 1998 Nov. 5. 1998 Changed F Preliminary Final Remark Preliminary

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

FEATURES

Fast Access Time 10,12,15ns(Max.) Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) 5mA(Max.) 0.5mA(Max.) L-ver. only Operating : 93mA(Max.) Single 5.0V 10% Power Supply TTL Compatible Inputs and Outputs I/O Compatible with 3.3V Device Fully Static Operation - No Clock or Refresh required Three State Outputs 2V Minimum Data Retention: L-ver. only Center Power/Ground Pin Configuration Data Byte Control: LB: I/O1~ I/O8, UB: I/O9~ I/O16 Standard Pin Configuration: K6R1016C1C-F: 48-Fine pitch BGA with 0.75 Ball pitch

The a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016C1C is packaged 400mil 44-pin plastic SOJ or TSOP2 forward or 48-Fine pitch BGA.

Pin Name Data Cont. Data Cont. Gen. CLK

Pin Function Address Inputs Write Enable Chip Select Output Enable Lower-byte Control(I/O1~I/O8) Upper-byte Control(I/O9~I/O16) Data Inputs/Outputs Power(+5.0V) Ground No Connection

Parameter Voltage on Any Pin Relative V SS Voltage V CC Supply Relative V SS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC Pd TSTG TA Rating to 85 Unit W C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min Typ 5.0 0 Max VCC+0.5*** 0.8 Unit

* The above parameters are also guaranteed at industrial temperature range. VIL(Min) = -2.0V a.c(Pulse Width 8ns) for I 20mA. VIH (Max) + 2.0V a.c(Pulse Width 8ns) for I 20mA.


 

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