Details, datasheet, quote on part number: K6R1008V1C-I12
PartK6R1008V1C-I12
CategoryMemory => SRAM => Async. SRAM => 1 Mb => Fast SRAM
TitleFast SRAM
DescriptionDescription = K6R1008V1C 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx8 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,i ;; Operating Current(mA) = 80,75,73 ;; Standby Current(mA) = 5 ;; Package = 32SOJ,32TSOP2 ;; Production Status = Eol ;; Comments = Converted Into K6R1008V1D
CompanySamsung Semiconductor, Inc.
DatasheetDownload K6R1008V1C-I12 datasheet
  

 

Features, Applications

128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Relax DC characteristics. Item ICC 15ns 20ns Draft Data Aug. 5. 1998 Sep. 7. 1998 Previous 68mA 65mA Changed 73mA 70mA Mar. 3. 1999 Final Remark Preliminary

Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Changed Standby Current. Item Previous Standby 0.3mA 2.3. Added Data Retention Characteristics. Add 10ns part. VIH/VIL Change Item VIH VIL Previous Min 2.0 -0.5 Max VCC+0.5 0.8 Min 2.0 -0.3

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

FEATURES

Fast Access Time 10,12,15ns(Max.) Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) 5mA(Max.) 0.5mA(Max.) L-ver. only Operating : 73mA(Max.) Single 3.3 0.3V Power Supply TTL Compatible Inputs and Outputs Fully Static Operation - No Clock or Refresh required Three State Outputs 2V Minimum Data Retention : L-ver. only Center Power/Ground Pin Configuration Standard Pin Configuration : 32-TSOP2-400CF

The a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1008V1C is packaged 400mil 32-pin plastic SOJ or TSOP2 forward.

Pin Name 16 WE Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+3.3V) Ground No Connection

Parameter Voltage on Any Pin Relative V SS Voltage V CC Supply Relative V SS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC Pd TSTG TA Rating to 85 Unit W C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min Typ 3.3 0 Max 3.6 0 VCC 0.3*** 0.8 Unit

* The above parameters are also guaranteed at industrial temperature range. V IL(Min) = -2.0V a.c(Pulse Width 8ns) for 20mA. V IH(Max) + 2.0V a.c (Pulse Width 8ns) for I 20mA.

Parameter Input Leakage Current Output Leakage Current Operating Current Symbol ILI ILO ICC Test Conditions VIN = VSS to VCC CS=VIH or OE=VIH or WE=VIL VOUT=VSS to VCC Min. Cycle, 100% Duty CS=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, CS=VIH IOL=8mA IOH=-4mA Normal L-ver. 12ns 15ns Standby Current ISB ISB1 Min -2 2.4 Max V mA Unit A mA

Output Low Voltage Level Output High Voltage Level
* The above parameters are also guaranteed at industrial temperature range.

 

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