Details, datasheet, quote on part number: K6R1008V1A
PartK6R1008V1A
CategoryMemory => SRAM => Async. SRAM => 1 Mb => Fast SRAM
TitleFast SRAM
DescriptionDescription = K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx8 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 12,15,20 ;; Operating Temperature = C,i ;; Operating Current(mA) = 140 ;; Standby Current(mA) = 5 ;; Package = 32SOJ,32TSOP2 ;; Production Status = Eol ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload K6R1008V1A datasheet
  

 

Features, Applications

128Kx8 High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to final Data Sheet. 2.1. Delete Preliminary. Add Low Power Product and update D.C parameters. 3.1. Add Low Power Products with ISB1=0.5mA and Data Retention Mode(L-ver. only). 3.2. Update D.C parameters. Previous spec. Updated spec. ITEMS (12/15/17/20ns part) (12/15/17/20ns part) ICC 170/165/160/155mA 140/135/135/130mA ISB 10mA 5mA Add Industrial Temperature Range parts and 300mil 32-SOJ PKG. 4.1. Add 32-Pin 300mil-SOJ Package. 4.2. Add Industrial Temperature Range parts with the same parameters as Commercial Temperature Range parts. 4.2.1. Add K6R1008V1A parts for Industrial Temperature Range. 4.2.2. Add ordering information. 4.2.3. Add the condition for operating at Industrial Temp. Range. 4.3. Add timing diagram to define tWP as (Timing Wave Form of Write Cycle(CS=Controlled). 5.1. Delete L-version. 5.2. Delete Data Retention Characteristics and Wavetorm. 5.3. Delete 17ns Part. 5.4. Add Capacitive load of the test environment in A.C test load. Draft Data Jan. 18th, 1995 Apr. 22th, 1995 Remark Design Target Preliminary

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

FEATURES

Fast Access Time 15, 20ns(Max.) Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating : 130mA(Max.) Single 0.3V Power Supply TTL Compatible Inputs and Outputs Fully Static Operation - No Clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration Standard Pin Configuration : 32-TSOP2-400CF

The a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1A uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1008V1A is packaged 400mil 32-pin plastic SOJ or TSOP2 forward.

Pin Name Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+3.3V) Ground CS OE I/O ~ I/O8 VCC VSS

Parameter Voltage on Any Pin Relative V SS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC PD TSTG TA Rating to 85 Unit W C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min Typ 3.3 0 Max 3.6 0 VCC 0.3*** 0.8 Unit

* The above parameters are also guaranteed at industrial temperature range. VIL(Min) = -2.0V a.c(Pulse Width 10ns) for I 20mA. VIH(Max) = VCC + 2.0V a.c (Pulse Width 10ns) for I 20mA.

Parameter Input Leakage Current Output Leakage Current Operating Current Symbol ILI ILO ICC Test Conditions VIN = VSS to VCC CS=VIH or OE=VIH or WE=VIL VOUT=VSS to VCC Min. Cycle, 100% Duty CS=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, CS=VIH 15ns 20ns Standby Current ISB ISB1 Output Low Voltage Level Output High Voltage Level VOL VOH Min -2 2.4 Max mA V Unit A mA

* The above parameters are also guaranteed at industrial temperature range.

 

Related products with the same datasheet
K6R1008V1A-12
K6R1008V1A-15
K6R1008V1A-20
K6R1008V1A-C
K6R1008V1A-C12
K6R1008V1A-C15
K6R1008V1A-C20
K6R1008V1A-I
K6R1008V1A-I12
K6R1008V1A-I15
K6R1008V1A-I20
K6R1008V1A-J
Some Part number from the same manufacture Samsung Semiconductor, Inc.
K6R1008V1A-12 Description = K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx8 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 12,15,20 ;; Operating Temperature = C,i ;; Operating Current(mA)
K6R1008V1B Description = K6R1008V1B 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx8 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 8,10,12 ;; Operating Temperature = C,i ;; Operating Current(mA)
K6R1008V1C Description = K6R1008V1C 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx8 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,i ;; Operating Current(mA)
K6R1008V1D Description = K6R1008V1D 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx8 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 8,10 ;; Operating Temperature = C,i ;; Operating Current(mA)
K6R1008V1D-JTCI08/10 64kx16 Bit High-speed CMOS Static RAM ( 3.3v Operating ) Operated at Commercial And Industrial Temperature Ranges.
K6R1008V1D-T Description = K6R1008V1D 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx8 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 8,10 ;; Operating Temperature = C,i ;; Operating Current(mA)
K6R1016C1A Description = K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ;; Organization = 64Kx16 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 12,15,20 ;; Operating Temperature = C,i ;; Operating Current(mA) = 190 ;; Standby
K6R1016C1B Description = K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ;; Organization = 64Kx16 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 8,10,12 ;; Operating Temperature = C,i ;; Operating Current(mA) = 200,195,190
K6R1016C1C Description = K6R1016C1C 64K X 16 Bit High-speed CMOS Static RAM ;; Organization = 64Kx16 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,i ;; Operating Current(mA) = 105,95,93
K6R1016C1D Description = K6R1016C1D 64K x1 6 Bit High-speed CMOS Static RAM(5.0V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10 ;; Operating Temperature = C,i ;; Operating Current(mA) = 65 ;; Standby
K6R1016V1A Description = K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 12,15,20 ;; Operating Temperature = C,i ;; Operating Current(mA)

K3P4C1000E-DC15 : 8M bit Description = K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ;; Organization = 1Mx8,512Kx16 ;; Voltage(V) = 5.0 ;; Speed(ns) = 100/30(Max.)@CL=50pF ;; Current (mA/uA) = 80/50 ;; Package = 44SOP,44TSOP2,42DIP ;; Production Status = Mass Production ;; Comments = -

KM68U2000LTI-10L : Description = KM68U2000LT 256K X 8 Bit Low Power And Low Voltage CMOS Static RAM ;; Organization = 256Kx8 ;; Vcc(V) = 2.7~3.3 ;; Speed-tAA(ns) = 85,100 ;; Operating Temperature = C,i ;; Operating Current(mA) = 40 ;; Standby Current(uA) = 15 ;; Package = 32TSOP1 ;; Production Status = Eol ;; Comments

KS0676 : TFT PANEL Description = KS0676 6 Bit 480 Channel Tft-lcd Source Driver ;; Source (Output) = 480 ;; Gate (Output) = - ;; Application = Note PC ;; Inversion = D/l ;; Gray Scale = 64 ;; VDD (Min.V) = 2.7 ;; VLCD (Max.V) = 8 ;; Frequency(Max.Hz) = 65M ;; Interface = TTL ;; Package = Tcp/cof ;; Production Status =

KS86C4504 : S3C9(KS86) Series Description = KS86C4504 ;; ROM(KB) = 4 ;; RAM(bytes) = 208 ;; I/o Pins = 18 ;; Interrupt (Int/Ext) = 2/2 ;; Timer/counters = BT/8TC ;; Serial Interface = - ;; LCD (Seg/Com) = - ;; ADC (BitxCh) = 10x9 ;; PWM(BitxCh) = 8x1 ;; Max. OSC.Freq. (MHz) = 10 ;; VDD(V) = 2.0~5.5 ;; Other Features = Lvr,rc ;;

M366S3253DTS-C1L : Unbuffered DIMM Description = M366S3253DTS 32Mx64 Sdram Dimm Based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 256 ;; Organization = 32Mx64 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 7A,1H,1L ;; #of Pin = 168 ;; Power = C,l ;; Component Composition = (32Mx8)x8+E

K4C89083AF-ACFB : 288mb x18 Network-dram2 Specification

K8A6215EBC-HC7B0 : 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA88 Specifications: Memory Category: Flash, PROM ; Density: 67109 kbits ; Number of Words: 4000 k ; Bits per Word: 16 bits ; Package Type: 8 X 11 MM, 1.10 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-88 ; Pins: 88 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Access Time: 70 ns ; Operating Temperature: 0 t

KM6161002CIF-200 : 64K X 16 STANDARD SRAM, 12 ns, PBGA48 Specifications: Memory Category: SRAM Chip ; Density: 1049 kbits ; Number of Words: 64 k ; Bits per Word: 16 bits ; Package Type: 0.75 MM PITCH, FBGA-48 ; Pins: 48 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 12 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)

KM616V4002BJ-100 : 256K X 16 STANDARD SRAM, 100 ns, PDSO44 Specifications: Memory Category: SRAM Chip ; Density: 4194 kbits ; Number of Words: 256 k ; Bits per Word: 16 bits ; Package Type: TSOP, 0.400 INCH, REVERSE, TSOP2-44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 100 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)

KM616V4002BT-150 : 256K X 16 STANDARD SRAM, 100 ns, PDSO44 Specifications: Memory Category: SRAM Chip ; Density: 4194 kbits ; Number of Words: 256 k ; Bits per Word: 16 bits ; Package Type: TSOP, 0.400 INCH, REVERSE, TSOP2-44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 100 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)

Same catergory

Am29BDS128H : CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory. 9hhphirpvyrhqsrihxuvyr rrpvtrhrthspvvhurihx aryhrpirrrrhqhqvrrhv Hyvyr7hxhpuvrpr AihxhpuvrprhhvyhiyrrsrUhiyr! 7Trp Uhqiirpvurhrqrvpr 6pivhvsrpphirrhrq Hhshprq "prrpuyt rp Ahpypxrqhqvqrvsvhiyr) Trqrhrrhvrhqqhhs thqhhhrpuhvirvtrhrq urrrurrhrrhv 9hhQyyvthqUttyr7v.

Am41DL16x4D : . Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am29DL163D Bottom Boot 16 Megabit x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP s Power supply voltage to 3.3 volt s High performance AMD-supplied software manages data programming and erasing, enabling EEPROM emulation.

GS816118 : Sychronous Burst. This supplemental information applies to the GS816118/36T datasheet, which you will find attached to this document. This supplement includes a new package offering (the 165-bump BGA--Package D), as well as an additional organization (x32, which is only offered in the 165 BGA for this part). 1/8 s cited are subject to change without notice. For latest.

HYM71V16M635BT6 : ->SO DIMM. based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh The Hynix HYM71V16M635B(L)T6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx16bits CMOS Synchronous DRAMs 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package a 144pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors.

HYMD116G725AL8 : 128 MB. 16Mx72 Bits Registered DDR Sdram Dimm. Hynix HYMD116G725A(L)8-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix HYMD116G725A(L)8K/H/L series consists of nine 16Mx8 DDR SDRAM in 400mil TSOP II packages a 184pin glass-epoxy substrate. Hynix HYMD116G725A(L)8-K/H/L series provide.

IDT70T9159 : 8K X 9 Sync,2.5V Dual-port RAM, Pipelined/flow-through. True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access Commercial:7.5/9/12ns (max.) Industrial: 9ns (max.) Low-power operation IDT70T9169/59L Active: 225mW (typ.) Standby: 1.5mW (typ.) Flow-Through or Pipelined output mode on either Port via the FT/PIPE pins Counter enable and reset.

IS41C4105 : 1Mx4 (4-MBIT) Dynamic RAM With Fast Page Mode. Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: cycles/16 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden JEDEC standard pinout Single power supply: 10% (IS41LV4105) Industrial temperature available The ISSI IS41C4105 and IS41LV4105 are x 4-bit high-performance CMOS Dynamic Random Access Memories. Fast Page.

IS42S32200 : 64M2Mx32 SDR. Clock frequency: 166, 143 MHz Fully synchronous; all signals referenced to a positive clock edge Internal bank for hiding row access/precharge Single 3.3V power supply LVTTL interface Programmable burst length full page) Programmable burst sequence: Sequential/Interleave Self refresh modes 4096 refresh cycles every 64 ms Random column address every.

KT3264SSN3U : ->SODIMM. 256 MByte x 64) SDRAM Unbuffered 144 Pin SODIMM LOW PROFILE (1.03 inch height) This memory module is a high performance 256 Megabyte Unbuffered synchronous dynamic RAM module organized a 144 pin Small Outline Dual In-Line Memory Module (SODIMM) package. The module utilizes eight 4Mx4X16 256MbitSDRAM devices in a TSOP II 400 mil package. A 256 Byte Serial.

M29W040B : Industry Standard Single Supply 3V. 4 Mbit (512KB X8, Uniform BLOCK) Low Voltage Single Supply Flash Memory.

M5M5256DRV-85VXL-I : 262144-bit (32768-word BY 8-bit) CMOS Static RAM. The is 262,144-bit CMOS static RAMs organized by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require.

MCM69D618 : 64k X 18 Bit Synchronous Dual I/o, Dual Address SRAM. x 18 Bit Synchronous Dual I/O, Dual Address SRAM The a 1Mbit static random access memory, organized as 64K words of 18 bits. It common data input and data output buffers and incorporates input and output registers onboard with high speed SRAM. The MCM69D618 allows the user to concurrently perform reads, writes, or passthrough cycles in combination.

MSM54V16255A : DRAMs and ASMs. 256K X 16 DRAM Fpm, 3V.

SF23C8000 : = 8Mb Parallel Mask ROM ;; I/o Extender = --.

SST29XF010-150-4C-EH : 1 Mbit ( 128k X8 ) Page-mode EePROM. Single Voltage Read and Write Operations 5.0V-only for 3.0-3.6V for 2.7-3.6V for SST29VE010 Superior Reliability Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V Standby Current: 10 A (typical) Fast Page-Write Operation.

STK11C48 : SRAM. Density = 16K ;; Format = 2K X 8 ;; # of Pins = 28 ;; Access Time (ns MAX) = 25,35,45 ;; Initiated Store = Software ;; Production = Now ;; Volt = 5 ;; Temps Commercial Industrial Military = C/i.

TH58100FTI : Org. = 128M X 8 ;; Status = Die Transition ;; Replacement = TC58DVG02A1FTI0 ;; Package = Tsop-i 48 Pins ;; Voltage = 2.7V to 3.6V ;; Page Size = 528 Bytes ;; Block Size = 16K Bytes.

VDD8616A8A : VDD8616A8A, 16Mx16, 4B/SSTL_2, 8K/64ms, -75/133/CL2 -75A/133/CL2.5, 2.5V, 66-pin 400 Mil,tsop ii.

CAT24C32 : 32-Kb I2C CMOS Serial EEPROM The CAT24C32 is a 32-Kb Serial CMOS EEPROM, internally organized as 128 pages of 32 bytes each, for a total of 4,096 bytes of 8 bits each. It a 32-byte page write buffer and supports both the Standard (100 kHz) as well as Fast (400 kHz) I2C protocol. Write operations can be inhibited by taking the WP pin High (this protects.

WMS512K8-100CC : 512K X 8 STANDARD SRAM, 100 ns, CDIP32. s: Memory Category: SRAM Chip ; Density: 4194 kbits ; Number of Words: 512 k ; Bits per Word: 8 bits ; Package Type: DIP, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 ; Pins: 32 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 100 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

 
0-C     D-L     M-R     S-Z