Details, datasheet, quote on part number: K6R1008C1D-12
PartK6R1008C1D-12
CategoryMemory => SRAM => Async. SRAM => 1 Mb => Fast SRAM
TitleFast SRAM
DescriptionDescription = K6R1008C1D 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ;; Organization = 128Kx8 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10 ;; Operating Temperature = C,i ;; Operating Current(mA) = 65 ;; Standby Current(mA) = 20,5 ;; Package = 32SOJ,32TSOP2 ;; Production Status = Mass Production ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload K6R1008C1D-12 datasheet
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Features, Applications

128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.

Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 History Initial release with Preliminary. Current modify 1. Delete 15ns speed bin. 2. Change Icc for Industrial mode. Item 10ns ICC(Industrial) 12ns Draft Data June. 8. 2001 September. 2001 December.18 Previous 85mA 75mA Current 75mA 65mA June. 19. 2002 Final Remark Preliminary

1. Final datasheet release. 2. Delete UB,LB releated AC characteristics and timing diagram.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

PKG C : Commercial Temperature ,Normal Power Range I : Industrial Temperature ,Normal Power Range Temp. & Power

FEATURES

Fast Access Time 10,12(Max.) Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R1008C1D-12: 55mA(Max.) Single 5.0Vą10% Power Supply TTL Compatible Inputs and Outputs I/O Compatible with 3.3V Device Fully Static Operation - No Clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration Standard Pin Configuration : 32-TSOP2-400CF Operating in Commercial and Industrial Temperature range.

The a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008C1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1008C1D is packaged 400mil 32-pin plastic SOJ or TSOP2 forward.

Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+5.0V) Ground No Connection


 

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K6R1008V1D Description = K6R1008V1D 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx8 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 8,10 ;; Operating Temperature = C,i ;; Operating Current(mA)
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