Details, datasheet, quote on part number: K6R1008C1B-I10
PartK6R1008C1B-I10
CategoryMemory => SRAM => Async. SRAM => 1 Mb => Fast SRAM
TitleFast SRAM
DescriptionDescription = K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ;; Organization = 128Kx8 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 8,10,12 ;; Operating Temperature = C ;; Operating Current(mA) = 160 ;; Standby Current(mA) = 10 ;; Package = 32SOJ,32TSOP2 ;; Production Status = Eol ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload K6R1008C1B-I10 datasheet
  

 

Features, Applications

128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

Rev No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Delete 32-SOJ-300 package. 2.3. Delete L-version. 2.4. Delete Data Retention Characteristics and Waveform. 2.5. Add Capacitive load of the test environment in A.C test load. 2.6. Change D.C characteristics. Previous spec. Changed spec. Items (8/10/12ns part) (8/10/12ns part) ICC 160/150/140mA 160/155/150mA ISB 30mA 50mA Draft Data Apr. 1st, 1997 Jun. 1st, 1997 Remark Design Target Preliminary

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

FEATURES

Fast Access Time 8,10,12ns(Max.) Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating : 150mA(Max.) Single 5.0V 10% Power Supply TTL Compatible Inputs and Outputs I/O Compatible with 3.3V Device Fully Static Operation - No Clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration Standard Pin Configuration K6R1008C1B-T: 32-TSOP2-400CF

The a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008C1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1008C1B is packaged 400mil 32-pin plastic SOJ or TSOP2 forward.

Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+5.0V) Ground No Connection

Parameter Voltage on Any Pin Relative V SS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC PD TSTG TA Rating to 85 Unit W C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min Typ 5.0 0 Max 5.5 0 VCC 0.5*** 0.8 Unit

* The above parameters are also guaranteed at industrial temperature range. VIL(Min) = -2.0V a.c(Pulse Width 6ns) for I 20mA. VIH(Max) = VCC + 2.0V a.c (Pulse Width 6ns) for I 20mA.

Parameter Input Leakage Current Output Leakage Current Operating Current Symbol ILI ILO ICC Test Conditions VIN = VSS to VCC CS=VIH or OE=VIH or WE=VIL VOUT=VSS to VCC Min. Cycle, 100% Duty CS=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, CS=VIH 10ns 12ns Standby Current ISB ISB1 Output Low Voltage Level Output High Voltage Level VOL VOH VOH1** Min -2 2.4 Max mA V Unit A mA

* The above parameters are also guaranteed at industrial temperature range. 5%, Temp.=25C.

 

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