Details, datasheet, quote on part number: 2PD602A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Complementary N/P FET
TitleComplementary N/P FET
Description2PD602A; NPN General Purpose Transistor
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload 2PD602A datasheet
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Features, Applications

FEATURES High current (max. 500 mA) Low voltage (max. 50 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION

NPN transistor an SC-59 plastic package. PNP complement: 2PB710A. MARKING TYPE NUMBER 2PD602AR 2PD602AS MARKING CODE XR XS

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector MIN. MAX. mW C UNIT

THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted an FR4 printed-circuit board. CHARACTERISTICS Tamb 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain 2PD602AS DC current gain VCEsat Cc fT collector-emitter saturation voltage collector capacitance transition frequency 2PD602AR 2PD602AS Note 1. Pulse test: tp 300 s; = 500 mA; VCE 10 V; note = 300 mA; = 30 mA; note = 0; VCB = 1 MHz = 50 mA; VCE = 100 MHz; note 1 CONDITIONS = 0; VCB = 0; VCB = 0; VEB = 150 mA; VCE 10 V; note MIN. 5 10 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500


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