Details, datasheet, quote on part number: 2PD1820A
CategoryDiscrete => Transistors => Bipolar => General Purpose => NPN
Description2PD1820A; NPN General Purpose Transistor
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload 2PD1820A datasheet
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Features, Applications

FEATURES High current (max. 500 mA) Low voltage (max. 50 V) Low collector-emitter saturation voltage (max. 600 mV). APPLICATIONS General purpose switching and amplification, especially for portable equipment. DESCRIPTION NPN transistor SC-70; SOT323 plastic package. PNP complement: 2PB1219A.

TYPE NUMBER 2PD1820AR 2PD1820AS Note Made in Hong Kong. t : Made in Malaysia.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 open base open collector CONDITIONS open emitter MIN. MAX. UNIT mW °C

THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted an FR4 printed-circuit board. CHARACTERISTICS Tamb 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain 2PD1820AR 2PD1820AS hFE VCEsat Cc fT Note 1. Pulse test: tp 300 µs; 0.02. DC current gain collector-emitter saturation voltage collector capacitance transition frequency = 500 mA; VCE 10 V; note = 300 mA; = 30 mA; note = 0; VCB = 1 MHz CONDITIONS = 0; VCB = 0; VCB = 0; VEB = 150 mA; VCE 10 V; note MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1


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