|Category||Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs|
|Description||Smartdiscretes MOSFET 1 Amp, 62 Volts, Logic Level, Package: Dpak, Pins=3|
|Datasheet||Download MLD1N06CLT4 datasheet
|Cross ref.||Similar parts: MLD1N06CL, NID9N05CL, NID9N05CLT4|
SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level
The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high inrush current or a shorted load condition could occur. This logic level power MOSFET features current limiting for short circuit protection, integrated GateSource clamping for ESD protection and integral GateDrain clamping for overvoltage protection and Sensefet technology for low onresistance. No additional gate series resistance is required when interfacing to the output of a MCU, but 40 k gate pulldown resistor is recommended to avoid a floating gate condition. The internal GateSource and GateDrain clamps allow the device to be applied without use of external transient suppression components. The GateSource clamp protects the MOSFET input from electrostatic voltage stress to 2.0 kV. The GateDrain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.
Rating DraintoSource Voltage DraintoGate Voltage (RGS 1.0 M) GatetoSource Voltage Continuous Drain Current Continuous Single Pulse Total Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Voltage (Human Model) Symbol VDSS VDGR Value Clamped Unit Vdc 2 3 VGS ID IDM PD TJ, Tstg ESD ±10 Selflimited 150 2.0 Vdc Adc Apk Watts T 4 CASE 369A DPAK STYLE 2 = Year = Work Week = MOSFET
Thermal Resistance Junction to Case Junction to Ambient Junction to Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 sec. °C/W RJC RJA °C 1 Gate 2 Drain 3 SourceDevice MLD1N06CLT4 Package DPAK Shipping 2500 Tape & Reel
1. When surface mounted an FR4 board using the minimum recommended pad size.
Preferred devices are recommended choices for future use and best overall value.
Rating Single Pulse DraintoSource Avalanche Energy Starting = 25°C Symbol EAS Value 80 Unit mJ
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Internally Clamped) (ID = 20 mAdc, VGS = 0 Vdc) (ID = 20 mAdc, VGS = 0 Vdc, = 150°C) Zero Gate Voltage Drain Current (VDS = 45 Vdc, VGS = 0 Vdc) (VDS = 45 Vdc, VGS = 0 Vdc, = 150°C) GateSource Leakage Current (VG = 5.0 Vdc, VDS = 0 Vdc) (VG = 5.0 Vdc, VDS = 0 Vdc, 150°C) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (ID = 250 µAdc, VDS = VGS) (ID = 250 µAdc, VDS = VGS, = 150°C) Static DraintoSource OnResistance (ID = 1.0 Adc, VGS = 4.0 Vdc) (ID = 1.0 Adc, VGS = 5.0 Vdc) (ID = 1.0 Adc, VGS = 4.0 Vdc, = 150°C) (ID = 1.0 Adc, VGS = 5.0 Vdc, = 150°C) Static SourcetoDrain Diode Voltage (IS = 1.0 Adc, VGS = 0 Vdc) Static Drain Current Limit (VGS = 5.0 Vdc, VDS = 10 Vdc) (VGS = 5.0 Vdc, VDS = 10 Vdc, = 150°C) Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc) RESISTIVE SWITCHING CHARACTERISTICS (Note 3.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. LS nH (VDD = 25 Vdc, = 1.0 Adc, VGS(on) = 5.0 Vdc, RGS = 50 Ohms) td(on) tr td(off) tf ns VGS(th) 1.0 0.6 RDS(on) VSD ID(lim) 2.0 1.1 gFS mhos Vdc Adc Ohms Vdc V(BR)DSS 59 IDSS IGSS µAdc Vdc Symbol Min Typ Max UnitFigure 2. Transfer Function SHORT CIRCUIT PROTECTION AND THE EFFECT OF TEMPERATURE
From a standard power MOSFET process, several active and passive elements can be obtained that provide onchip protection to the basic power device. Such elements require only a small increase in silicon area and/or the addition of one masking layer to the process. The resulting device exhibits significant improvements in ruggedness and reliability as well as system cost reduction. The SMARTDISCRETES device functions can now provide an economical alternative to smart power ICs for power applications requiring low onresistance, high voltage and high current. These devices are designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontroller unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high inrush current or a shorted load condition could occur.
The amount of time that an unprotected device can withstand the current stress resulting from a shorted load before its maximum junction temperature is exceeded is dependent upon a number of factors that include the amount of heatsinking that is provided, the size or rating of the device, its initial junction temperature, and the supply voltage. Without some form of current limiting, a shorted load can raise a device's junction temperature beyond the maximum rated operating temperature in only a few milliseconds. Even with no heatsink, the MLD1N06CL can withstand a shorted load powered by an automotive battery to 14 Volts) for almost a second if its initial operating temperature is under 100°C. For longer periods of operation in the currentlimited mode, device heatsinking can extend operation from several seconds to indefinitely depending on the amount of heatsinking provided.
The onchip circuitry of the MLD1N06CL offers an integrated means of protecting the MOSFET component from high inrush current or a shorted load. As shown in the schematic diagram, the current limiting feature is provided by an NPN transistor and integral resistors R1 and R2. R2 senses the current through the MOSFET and forward biases the NPN transistor's base as the current increases. As the NPN turns on, it begins to pull gate drive current through R1, dropping the gate drive voltage across it, and thus lowering the voltage across the gatetosource of the power MOSFET and limiting the current. The current limit is temperature dependent as shown in Figure 3, and decreases from about 2.3 Amps 25°C to about 1.3 Amps at 150°C. Since the MLD1N06CL continues to conduct current and dissipate power during a shorted load condition, it is important to provide sufficient heatsinking to limit the device junction temperature to a maximum of 150°C. The metal current sense resistor R2 adds about 0.4 ohms to the power MOSFET's onresistance, but the effect of temperature on the combination is less than on a standard MOSFET due to the lower temperature coefficient of R2. The onresistance variation with temperature for gate voltages of 4 and 5 Volts is shown in Figure 5. Backtoback polysilicon diodes between gate and source provide ESD protection to greater than 2 kV, HBM. This onchip protection feature eliminates the need for an external Zener diode for systems with potentially heavy line transients.
|Some Part number from the same manufacture ON Semiconductor|
|MLD2N06CL Smartdiscretes Internally Clamped, Current Limited N-channel Logic Level Power MOSFET|
|MLP1N06CL Smartdiscretes MOSFET 1 Amp, 62 Volts, Logic Level , Package: TO-220, Pins=3|
|MLP2N06CL Smartdiscretes MOSFET 2 Amps, 62 Volts, Logic Level, Package: TO-220, Pins=3|
|MM3Z10V Zener Voltage Regulator Diode|
|MM3Z10VT1 Zener Voltage Regulator Diode , Package: SOD-323, Pins=2|
|MM3Z10VT1G Zener Voltage Regulator Diode|
|MM3Z10VT1G Zen SOD323 Reg 0.2W 10V PB Free, Package: SOD-323, Pins=2|
|MM3Z11V Zener Voltage Regulator Diode|
|MM3Z11VT1 Zener Voltage Regulator Diode , Package: SOD-323, Pins=2|
|MM3Z12V Zener Voltage Regulator Diode|
|MM3Z12VST1 Zen SOD323 Reg 0.2W 10V PB Free, Package: SOD-323, Pins=2|
|MM3Z12VST1G Zener Voltage Regulator Diode , Package: SOD-323, Pins=2|
|MM3Z12VT1 Zener Voltage Regulator Diode|
|MM3Z12VT1 Zener Voltage Regulator Diode , Package: SOD-323, Pins=2|
|MM3Z12VT1G Zener Voltage Regulator Diode|
|MM3Z12VT1G Zen SOD323 Reg 0.2W 10V PB Free, Package: SOD-323, Pins=2|
|MM3Z13V Zener Voltage Regulator Diode|
|MM3Z13VT1 Zener Voltage Regulator Diode , Package: SOD-323, Pins=2|
|MM3Z13VT1G Zener Voltage Regulator Diode|
|MM3Z13VT1G Zener Voltage Regulator Diode , Package: SOD-323, Pins=2|
|MM3Z15V Zener Voltage Regulator Diode|
BC337-16 : Transistor Silicon Plastic NPN , Package: TO-92 (TO-226), Pins=3
BSS138LT3G : Power MOSFET 200 Mamps, 50 Volts
MC74VHCT00AM : Quad 2-input NAND Gate
MC79L05ABDR2 : 100mA, 5V,±5% Tolerance, Negative Voltage Regulator, ta = -40°C to +125°C, Package: Soic, Pins=8
MJD127T4G : Complementary Darlington Power Transistor
MC100LVEL11DR2G : 2.5V / 3.3V ECL ”Ą2, ”Ą4, ”Ą8 Clock Generation Chip
SA51AG : 500 Watt Peak Power Minimosorb Zener Transient Voltage Suppressors
NTD4970N-35G : Power MOSFET 30V 36A 11mOhm Single N-Channel DPAK Power MOSFET, 30 V, 36 A, Single N Channel, DPAK/IPAK
CAT25128VI-GT3 : Memory Integrated Circuit (ics) EEPROM Tape & Reel (TR) 1.8 V ~ 5.5 V; IC EEPROM 128KBIT 10MHZ 8SOIC Specifications: Memory Type: EEPROM ; Memory Size: 128K (16K x 8) ; Speed: 10MHz ; Interface: SPI, 3-Wire Serial ; Package / Case: 8-SOIC (0.154", 3.90mm Width) ; Packaging: Tape & Reel (TR) ; Voltage - Supply: 1.8 V ~ 5.5 V ; Operating Temperature: -40°C ~ 85°C ; Format - Memory: EEPROMs - Seri
NCP694HSAN08T1G : Pmic - Voltage Regulator - Linear (ldo) Integrated Circuit (ics); IC REG LDO 1A 0.8V 6HSON Specifications: Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
CAT8801TTB-GT3 : Pmic - Supervisor Integrated Circuit (ics) Simple Reset/Power-On Reset Tape & Reel (TR) 1; VOLTAGE SUP LOW CURRENT Specifications: Output: Push-Pull, Totem Pole ; Reset: Active Low ; Package / Case: TO-236-3, SC-59, SOT-23-3 ; Packaging: Tape & Reel (TR) ; Number of Voltages Monitored: 1 ; Reset Timeout: 140 ms Minimum ; Type: Simple Reset/Power-On Reset ; Voltage - Threshold: 3.075V ; Operating Temperature:
2SK2051-S : N-channel Silicon Power MOSFET.
ASI10581 : NPN Silicon RF Power Transistor.
BCW69 : BCW69; BCW70; PNP General Purpose Transistors;; Package: SOT23 (SST3).
DSSK48-0025B : Power. 25V Power Schottky Rectifier With Common Cathode. Symbol IFRMS IFAV IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot Md Weight Conditions = 130°C; rectangular, = 130°C; rectangular, = 0.5; per device TVJ ms (50 Hz), sine IAS = tbd = 180 µH; TVJ = 25°C; non repetitive VA =1.5 VRRM typ.; f=10 kHz; repetitive International standard package Very low VF Extremely low switching losses Low IRM-values Epoxy meets.
GFZ3A-M : Zowie. Discrete, Diodes, Zowie. n LOWEST COST FOR GLASS SINTERED CONSTRUCTION n LOWEST VF FOR GLASS SINTERED CONSTRUCTION n TYPICAL < 100 nAmps n 3.0 AMP OPERATION = 100°C, WITH NO THERMAL RUNAWAY n SINTERED GLASS CAVITY-FREE JUNCTION Electrical Characteristics o C. Maximum Ratings Peak Repetitive Reverse VoltageVRRM RMS Reverse VoltageVR(rms) DC Blocking VoltageVDC Average Forward.
SD1727-05 : RF & Microwave Transistors, HF SSB Applications. OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD -30 dB COMMON EMITTER GOLD METALLIZATION P OUT 150 W PEP MIN. WITH 14 dB GAIN The 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (T case ° C) Collector-Base.
SFT17 : Pakage = TS-1 ;; Max. Reverse Voltage VRM (V)= 500 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 30.
STB6NC60-1 : Medium Voltage. N-channel 600V 1.0 Ohm - 6A - TO-220/TO220FP/I2PAK Power Mesh ii MOSFET.
TCP135K2 : Thyristor Surge Suppressor. Thyristor Surge Suppressor, Package : S08.
03028-BR101AJZP : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.0001 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1.00E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.
CTCDRH125-120N : 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 12 microH ; Inductance Tolerance: 30 (+/- %) ; DCR: 0.0300 ohms ; Rated DC Current: 3500 milliamps ; Testing.
FDMS7678 : POWER, FET. Max rDS(on) m at VGS 17.5 A Max rDS(on) m at VGS 15 A High performance technology for extremely low rDS(on) Termination is Lead-free RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power.
GSIB640N-M3/45 : 2.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 180000 mA ; VBR: 400 volts ; Package: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, GSIB-5S, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4.
NS01AR6040FE70 : RESISTOR, WIRE WOUND, 1 W, 1 %, 90 ppm, 0.604 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 0.6040 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 90 Ā±ppm/Ā°C ; Power Rating: 1 watts (0.0013.
RNF26C2C : RESISTOR, METAL FILM, 0.125 W, 1; 2; 5 %, 50 ppm, 1 ohm - 100000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Operating DC Voltage: 200 volts ; Operating Temperature: -55 to 70 C (-67 to 158 F).
SSN08A2201FQ : RESISTOR, NETWORK, FILM, ISOLATED, 0.4 W, SURFACE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), SOIC, SOIC ; Tolerance: 1 +/- % ; Temperature Coefficient: 25 Ā±ppm/Ā°C ; Power Rating: 0.4000 watts (5.36E-4 HP) ; Operating.
10MS7330MCA8X7 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 330 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 330 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 33 microamps ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40 to 185 F).
89715 : POWER TRANSFORMER, 150 VA. s: Category: Power ; Other Transformer Types / Applications: STANDARD ; Mounting: Chip Transformer ; Power Rating (VA): 150 VA.