Details, datasheet, quote on part number: MGW21N60ED
PartMGW21N60ED
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => Medium Voltage 600-1199 Volts
TitleMedium Voltage 600-1199 Volts
DescriptionInsulated Gate Bipolar Transistor With Anti-parallel Diode N-channel
CompanyON Semiconductor
DatasheetDownload MGW21N60ED datasheet
Cross ref.Similar parts: SGH20N60RUFD, SGH40N60UFD, SKW20N60, STGW20NB60HD
Quote
Find where to buy
 
  

 

Features, Applications

Designer'sTM Data Sheet Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) is co­packaged with a soft recovery ultra­fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage­blocking capability. Its new 600V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co­packaged IGBTs save space, reduce assembly time and cost. This new E­series introduces an energy efficient, ESD protected, and rugged short circuit device. Industry Standard TO­247 Package High Speed: Eoff = 65 mJ/A typical at 125°C High Voltage Short Circuit Capability 10 ms minimum 400 V Low On­Voltage 2.1 V typical A, 125°C Soft Recovery Free Wheeling Diode is included in the Package Robust High Voltage Termination ESD Protection Gate­Emitter Zener Diodes

IGBT 25°C 600 VOLTS SHORT CIRCUIT RATED ON­VOLTAGE

Rating Collector­Emitter Voltage Collector­Gate Voltage (RGE 1.0 M) Gate­Emitter Voltage Continuous Collector Current Continuous = 25°C Collector Current Continuous = 90°C Collector Current Repetitive Pulsed Current (1) Total Power Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, 20 ) Thermal Resistance Junction to Case ­ IGBT Thermal Resistance Junction to Diode Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating.

Designer's Data for "Worst Case" Conditions The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate "worst case" design.

Characteristic OFF CHARACTERISTICS Collector­to­Emitter Breakdown Voltage (VGE = 0 Vdc, = 25 µAdc) Temperature Coefficient (Positive) Emitter­to­Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, = 125°C) Gate­Body Leakage Current (VGE ± 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector­to­Emitter On­State Voltage (VGE = 15 Vdc, = 10 Adc) (VGE = 15 Vdc, = 10 Adc, = 125°C) (VGE = 15 Vdc, = 20 Adc) Gate Threshold Voltage (VCE = VGE, = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, = 20 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Turn­Off Switching Loss Turn­On Switching Loss Total Switching Loss Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Turn­Off Switching Loss Turn­On Switching Loss Total Switching Loss Gate Charge (VCC = 360 Vdc, = 20 Adc, Ad VGE = 15 Vdc) DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 10 Adc) (IEC = 10 Adc, = 125°C) (IEC = 17 Adc) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. VFEC (continued) Vdc (VCC = 360 Vdc, = 20 Adc, , VGE 15 Vd Vdc, = 125°C) Energy losses include "tail" (VCC = 360 Vdc, = 20 Adc, , VGE 15 Vd Vdc, 20 ) Energy losses include "tail" td(on) tr td(off) tf Eoff Eon Ets td(on) tr td(off) tf Eoff Eon Ets mJ ns (VCE = 25 Vdc, Vd VGE = 0 Vdc, = 1.0 MHz) Cies Coes Cres 23 pF VCE(on) VGE(th) 4.0 gfe Vdc mV/°C Mhos Vdc V(BR)CES 600 BVECS ICES IGES 200 50 µAdc 15 870 Vdc mV/°C Vdc µAdc Symbol Min Typ Max Unit

ELECTRICAL CHARACTERISTICS continued (TJ = 25°C unless otherwise noted)

Characteristic DIODE CHARACTERISTICS continued Reverse Recovery Time (IF = 20 Adc, = 360 Vdc, dIF/dt = 200 A/µs) Reverse Recovery Stored Charge Reverse Recovery Time (IF = 20 Adc, = 360 Vdc, dIF/dt = 200 A/µs, = 125°C) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 13 nH trr ta tb QRR trr ta tb QRR µC ns Symbol Min Typ Max Unit


Figure 4. Collector­To­Emitter Saturation Voltage versus Junction Temperature

 

Some Part number from the same manufacture ON Semiconductor
MGY20N120D Insulated Gate Bipolar Transistor With Anti-parallel Diode N-channel
MGY25N120 Insulated Gate Bipolar Transistor N-channel
MGY25N120D Insulated Gate Bipolar Transistor With Anti-parallel Diode N-channel
MHW916 UHF Silicon Fet Power Amplifier
MJ10005 Switchmode Series NPN Silicon Power Darlington Transistor With Base-emitter Speedup Diode
MJ10007 Switchmode Series NPN Silicon Power Darlington Transistors With Base-emitter Speedup Diode
MJ10009 Switchmode Series NPN Silicon Power Darlington Transistor With Base-emitter Speedup Diode
MJ10012 NPN Silicon Power Darlington Transistor
MJ10015 Switchmode Series NPN Silicon Power Darlington Transistors With Base-emitter Speedup Diode
MJ10016
MJ10020
MJ10021
MJ10023 Switchmode Series NPN Silicon Power Darlington Transistor With Base-emitter Speedup Diode
MJ11012 Power 30A 60V Darlington NPN , Package: TO-204 (TO-3), Pins=2
MJ11013 PNP 30 Ampere Darlington Power Transistor
MJ11014 NPN 30 Ampere Darlington Power Transistor
MJ11015 Power 30A 60V Darlington NPN , Package: TO-204 (TO-3), Pins=2
MJ11017 PNP 30 Ampere Darlington Power Transistor Complementary Silicon
MJ11021 Power 20A 250V Darlington PNP , Package: TO-204 (TO-3), Pins=2
MJ11028 Bipolar Power TO3 NPN 50A 60V, Package: TO-204 (TO-3), Pins=2
MJ11029 Power 50A 60V Darlington PNP , Package: TO-204 (TO-3), Pins=2

MAX809SN490T1 : Voltage Supervisory Very Low Supply Current 3-Pin Microprocessor Reset Monitors , Package: SOT-23 (TO-236), Pins=3

MC78T15ABT : 3A, 5V,±2% Tolerance, Voltage Regulator, ta = -40°C to +125°C, Package: TO-220, Pins=3

NBSG53ABAR2 : Divider 2.5 V/3.3 V Sige Selectable Differential Clock And Data D Flip-flop/clock Divider With Reset And Ols , Package: Fcbga, Pins=16

NCP305LSQ39T1 : Voltage Detector Series

MC74HC374ANG : Dual 4−stage Binary Ripple Counter High−performance Silicon−gate CMOS

DTA143TS3 : Digital Transistors (brt)

MC10ELT28DTG : 5 V TTL to Differential PECL and Differential PECL to TTL Translator

2N6344G : Triacs Silicon Bidirectional Thyristors

NCP4688DMU30TCG : 150 MA, Low Noise, LDO Linear Voltage Regulator The NCP4688 is a CMOS 150mA LDO linear voltage regulator with high output voltage accuracy which features a low noise output voltage and high ripple rejection. The low level of output noise 10uVrms typically is kept at any output voltage. The very com

CAT3200ZI-TE7 : Pmic - Voltage Regulator - Dc Dc Switching Regulator Integrated Circuit (ics) Step-Up (Boost), Switched Capacitor (Charge Pump) 100mA Adjustable; IC BOOST/SW CAP ADJ .1A 8MSOP Specifications: Type: Step-Up (Boost), Switched Capacitor (Charge Pump) ; Output Type: Adjustable ; PWM Type: - ; Synchronous Rectifier: No ; Number of Outputs: 1 ; Voltage - Output: Adjustable ; Current - Output: 100mA ; Frequency - Switching: 2MHz ; Voltage - Input: 2.7 V ~ 4.5 V ; Lead Free Statu

CAT1025WI-28-GT3 : Pmic - Supervisor Integrated Circuit (ics) Simple Reset/Power-On Reset Tape & Reel (TR) 1; IC SUPERVISR CPU 2K EEPROM 8SOIC Specifications: Output: Open Drain or Open Collector ; Reset: Active High/Active Low ; Package / Case: 8-SOIC (0.154", 3.90mm Width) ; Packaging: Tape & Reel (TR) ; Number of Voltages Monitored: 1 ; Reset Timeout: 130 ms Minimum ; Type: Simple Reset/Power-On Reset ; Voltage - Threshold: 2.85V ;

ICTE-12RL4G : Tv - Diode Circuit Protection 12V 1500W; TVS 1500W 12V UNIDIRECT AXIAL Specifications: Package / Case: DO-201AA, DO-27, Axial ; Packaging: Tape & Reel (TR) ; Polarization: Unidirectional ; Power (Watts): 1500W ; Voltage - Reverse Standoff (Typ): 12V ; Voltage - Breakdown: 14.1V ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

Same catergory

1N6306 : Ultra Fast Rectifier (less Than 100ns), Package : DO-5.

2N5252 : Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 300V ;; IC(cont) = 1A ;; HFE(min) = 40 ;; HFE(max) = 120 ;; @ Vce/ic = 10V / 100mA ;; FT = 30MHz ;; PD = 1W.

82375EB : Pci-eisa Bridge ( Pceb ). Provides the Bridge Between the PCI Local Bus and EISA Bus 100% PCI and EISA Compatible PCI and EISA Master Slave Interface Directly Drives 10 PCI Loads and 8 EISA Slots Supports PCI from to 33 MHz Data Buffers Improve Performance Four 32-bit PCI-to-EISA Posted Write Buffers Four 16-byte EISA-to-PCI Read Write Line Buffers EISA-to-PCI Read Prefetch.

BC479CSM : Screening Options Available = ;; Polarity = PNP ;; Package = LCC1 ;; Vceo = 40V ;; IC(cont) = 0.1A ;; HFE(min) = 200 ;; HFE(max) = 450 ;; @ Vce/ic = 5V / 2mA ;; FT = 150MHz ;; PD = 0.36W.

JAN2N3846 : NPN Transistor, Package : TO-63. Qualified per MIL-PRF-19500/412 Devices 2N3846 2N3847 Qualified Level JAN JANTX JANTXV Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation VCEO VCBO VEBO IC PT Top, Tstg Symbol RJC Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly +1750C 2) Derate linearly to +1750C Collector-Emitter.

S30VTA60 : General Purpose Rectifiers / 3 Phase Bridge Modules. Dual In-Line Package Compact 3 phase bridge High IFSM Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION Big Power Supply Air conditioner Factory Automation, Inverter @ Absolute Maximum Ratings (If not specified Tc=25) Symbol Conditions Item Tstg Storage Temperature Operating Junction Temperature Tj Maximum Reverse Voltage VRM IO Average.

SIGC156T60SNR2C : HV Chips. For Faster Switching Drive Application; Low Turn Off Energy.

CIB43P131AC : 1 FUNCTIONS, 0.6 A, DATA LINE FILTER. s: Devices in Package: 1 ; DCR: 0.0400 ohms ; Rated DC Current: 600 milliamps ; Operating Temperature: -55 to 125 C (-67 to 257 F).

CT-68511 : DATACOM TRANSFORMER FOR LAN; 10/100 BASE-TX; ETHERNET APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F).

DS3902U-515+T&R : DUAL 50K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO8. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), LEAD FREE, MICRO, SOP-8 ; Operating Temperature: -40 to 95 C (-40 to 203 F) ; Standards and Certifications: RoHS.

G0010R100FB12380 : RESISTOR, WIRE WOUND, 1 W, 1 %, 90 ppm, 0.1 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 0.1000 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 90 ±ppm/°C ; Power Rating: 1 watts (0.0013 HP) ; Operating.

NCC2907AUA : 600 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: HERMETIC SEALED, CERAMIC, LCC-4.

NPO0603HTTEB151F : CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.00015 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.50E-4 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

XQFM10010000B : RES,SMT,THIN FILM,1K OHMS,100WV,.1% +/-TOL,-250,250PPM TC,0202 CASE. s: Category / Application: General Use.

228180905001 : CAPACITOR, VARIABLE, FILM-POLY TETRAFLUOROETHYLENE, 300 V, 1.2 pF - 3.5 pF, VERTICAL ADJUSTER, THROUGH HOLE MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: FILM-POLY TETRAFLUOROETHYLENE ; Capacitance Type: Variable ; RoHS Compliant: Yes ; Capacitance Range: 1.20E-6 to 3.50E-6 microF ; WVDC: 300 volts.

2N6760R1 : 5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 1.22 ohms ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN ; Number of units in IC: 1.

2N930J : 30 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18. s: Polarity: NPN ; Package Type: HERMETIC SEALED, METAL CAN-3.

 
0-C     D-L     M-R     S-Z