Details, datasheet, quote on part number: MGW12N120E
PartMGW12N120E
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => High Voltage 1200 Volts <
TitleHigh Voltage 1200 Volts <
DescriptionInsulated Gate Bipolar Transistor N-channel
CompanyON Semiconductor
DatasheetDownload MGW12N120E datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Designer'sTM Data Sheet Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage­blocking capability. Short circuit rated IGBT's are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Industry Standard High Power TO­247 Package with Isolated Mounting Hole High Speed Eoff: 150 mJ/A typical at 125°C High Short Circuit Capability 10 ms minimum Robust High Voltage Termination

Rating Collector­Emitter Voltage Collector­Gate Voltage (RGE 1.0 M) Gate­Emitter Voltage Continuous Collector Current Continuous = 25°C Collector Current Continuous = 90°C Collector Current Repetitive Pulsed Current (1) Total Power Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, 20 ) Thermal Resistance Junction to Case ­ IGBT Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating.

Designer's Data for "Worst Case" Conditions The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate "worst case" design.

Preferred devices are Motorola recommended choices for future use and best overall value. REV 3

Characteristic OFF CHARACTERISTICS Collector­to­Emitter Breakdown Voltage (VGE = 0 Vdc, = 25 µAdc) Temperature Coefficient (Positive) Emitter­to­Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, = 125°C) Gate­Body Leakage Current (VGE ± 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector­to­Emitter On­State Voltage (VGE = 15 Vdc, = 5.0 Adc) (VGE = 15 Vdc, = 5.0 Adc, = 125°C) (VGE = 15 Vdc, = 10 Adc) Gate Threshold Voltage (VCE = VGE, = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Turn­Off Switching Loss Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Turn­Off Switching Loss Gate Charge (VCC = 720 Vdc, = 10 Adc, Ad VGE = 15 Vdc) INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 13 nH (VCC = 720 Vdc, = 10 Adc, , VGE 15 Vd Vdc, = 125°C) Energy losses include "tail" (VCC = 720 Vdc, = 10 Adc, , VGE 15 Vd Vdc, 20 ) Energy losses include "tail" td(on) tr td(off) tf Eoff td(on) tr td(off) tf Eoff mJ ns (VCE = 25 Vdc, Vd VGE = 0 Vdc, = 1.0 MHz) Cies Coes Cres 16 pF VCE(on) VGE(th) 4.0 gfe Vdc mV/°C Mhos Vdc V(BR)CES 1200 V(BR)ECS ICES IGES 2500 250 nAdc 25 870 Vdc mV/°C Vdc µAdc Symbol Min Typ Max Unit

40 IC, COLLECTOR CURRENT (AMPS) = 25°C VGE 20 V IC, COLLECTOR CURRENT (AMPS) = 125°C VGE 20 V
Figure 4. Collector­to­Emitter Saturation Voltage versus Junction Temperature
Figure 6. Gate­to­Emitter Voltage versus Total Charge

 

Some Part number from the same manufacture ON Semiconductor
MGW14N60ED Insulated Gate Bipolar Transistor
MGW20N120 Insulated Gate Bipolar Transistor N-channel
MGW21N60ED Insulated Gate Bipolar Transistor With Anti-parallel Diode N-channel
MGY20N120D
MGY25N120 Insulated Gate Bipolar Transistor N-channel
MGY25N120D Insulated Gate Bipolar Transistor With Anti-parallel Diode N-channel
MHW916 UHF Silicon Fet Power Amplifier
MJ10005 Switchmode Series NPN Silicon Power Darlington Transistor With Base-emitter Speedup Diode
MJ10007 Switchmode Series NPN Silicon Power Darlington Transistors With Base-emitter Speedup Diode
MJ10009 Switchmode Series NPN Silicon Power Darlington Transistor With Base-emitter Speedup Diode
MJ10012 NPN Silicon Power Darlington Transistor
MJ10015 Switchmode Series NPN Silicon Power Darlington Transistors With Base-emitter Speedup Diode
MJ10016
MJ10020
MJ10021
MJ10023 Switchmode Series NPN Silicon Power Darlington Transistor With Base-emitter Speedup Diode
MJ11012 Power 30A 60V Darlington NPN , Package: TO-204 (TO-3), Pins=2
MJ11013 PNP 30 Ampere Darlington Power Transistor
MJ11014 NPN 30 Ampere Darlington Power Transistor
MJ11015 Power 30A 60V Darlington NPN , Package: TO-204 (TO-3), Pins=2
MJ11017 PNP 30 Ampere Darlington Power Transistor Complementary Silicon

1N4936 : 1A 50V Fast-recovery Rectifier , Package: Axial Lead, Pins=2

BC848CW : General Purpose Transistors

BFR30LT1 : Small Signal JFET

NCV8501DADJ : 150 ma LDO Regulator , Package: Soic, Pins=8

SMS12CT1 : SC-74 Quad Transient Voltage Suppressor

SN74LS148M : 10-Line-to-4-Line And 8-Line-to-3-Line Priority Encoders

NSS20201MR6T1G : 20V 2A LOW VCE(sat) NPN High Current Transistor Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where afford

NCV7321D10G : Stand Alone LIN Transceiver The NCV7321 is a fully featured local interconnect network (LIN) transceiver designed to interface between a LIN protocol controller and the physical bus. The transceiver is implemented in I3T technology enabling both high-voltage analog circuitry and digital functionali

2SC4617R : NPN Silicon General Purpose Amplifier Transistor NPN General Purpose Amplifier Transistors Surface Mount

NCP3337 : 500 MA LDO With Power Good The NCP3337 is a high performance, low dropout regulator. With accuracy of ±0.9% over line and load and ultra low quiescent current and noise it encompasses all of the necessary features required by today consumer electronics. This unique device is guaranteed to be stable

 
0-C     D-L     M-R     S-Z