Details, datasheet, quote on part number: MGW12N120
PartMGW12N120
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => High Voltage 1200 Volts <
TitleHigh Voltage 1200 Volts <
DescriptionInsulated Gate Bipolar Transistor N-channel
CompanyON Semiconductor
DatasheetDownload MGW12N120 datasheet
Cross ref.Similar parts: STGW15H120DF2, STGWA40H120DF2, SGH10N120RUF
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Features, Applications

Designer'sTM Data Sheet Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage­blocking capability. Short circuit rated IGBT's are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Industry Standard High Power TO­247 Package with Isolated Mounting Hole High Speed Eoff: 150 mJ/A typical at 125°C High Short Circuit Capability 10 ms minimum Robust High Voltage Termination

Rating Collector­Emitter Voltage Collector­Gate Voltage (RGE 1.0 M) Gate­Emitter Voltage Continuous Collector Current Continuous = 25°C Collector Current Continuous = 90°C Collector Current Repetitive Pulsed Current (1) Total Power Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, 20 ) Thermal Resistance Junction to Case ­ IGBT Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating.

Designer's Data for "Worst Case" Conditions The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate "worst case" design.

Preferred devices are Motorola recommended choices for future use and best overall value. REV 3

Characteristic OFF CHARACTERISTICS Collector­to­Emitter Breakdown Voltage (VGE = 0 Vdc, = 25 µAdc) Temperature Coefficient (Positive) Emitter­to­Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, = 125°C) Gate­Body Leakage Current (VGE ± 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector­to­Emitter On­State Voltage (VGE = 15 Vdc, = 5.0 Adc) (VGE = 15 Vdc, = 5.0 Adc, = 125°C) (VGE = 15 Vdc, = 10 Adc) Gate Threshold Voltage (VCE = VGE, = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Turn­Off Switching Loss Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Turn­Off Switching Loss Gate Charge (VCC = 720 Vdc, = 10 Adc, Ad VGE = 15 Vdc) INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 13 nH (VCC = 720 Vdc, = 10 Adc, , VGE 15 Vd Vdc, = 125°C) Energy losses include "tail" (VCC = 720 Vdc, = 10 Adc, , VGE 15 Vd Vdc, 20 ) Energy losses include "tail" td(on) tr td(off) tf Eoff td(on) tr td(off) tf Eoff mJ ns (VCE = 25 Vdc, Vd VGE = 0 Vdc, = 1.0 MHz) Cies Coes Cres 16 pF VCE(on) VGE(th) 4.0 gfe Vdc mV/°C Mhos Vdc V(BR)CES 1200 V(BR)ECS ICES IGES 2500 250 nAdc 25 870 Vdc mV/°C Vdc µAdc Symbol Min Typ Max Unit

40 IC, COLLECTOR CURRENT (AMPS) = 25°C VGE 20 V IC, COLLECTOR CURRENT (AMPS) = 125°C VGE 20 V
Figure 4. Collector­to­Emitter Saturation Voltage versus Junction Temperature
Figure 6. Gate­to­Emitter Voltage versus Total Charge

 

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