|Category||Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => P-Channel|
|Datasheet||Download MGSF3455XT1 datasheet
|Cross ref.||Similar parts: NTGS3455T1|
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine TM Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorola's High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and battery powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospdPCHANNEL ENHANCEMENTMODE TMOS MOSFET rDS(on) 80 m (TYP)
CASE 318G02, Style 1 TSOP 6 PLASTIC 3 GATE SOURCE 4
Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous = 25°C Drain Current Pulsed Drain Current (tp 10 µs) Total Power Dissipation = 25°C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 300 260 Unit Vdc mW °C °C/W °C
Device MGSF3455XT1 MGSF3455XT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
GreenLine is a trademark of Motorola, Inc. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.Motorola Transistors, FETs and Diodes Device Data © Motorola, SmallSignal Inc. 1997
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, = 10 µA) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, = 70°C) GateBody Leakage Current (VGS ± 20 Vdc, VDS ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, = 250 µAdc) Static DraintoSource OnResistance (VGS = 10 Vdc, 1.45 A) (VGS = 4.5 Vdc, 1.2 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD = 15 Vdc, ID A, VGEN 10 ) td(on) tr td(off) pC ns (VDS 5.0 V) (VDS 5.0 V) (VDG 5.0 V) Ciss Coss Crss 10 pF VGS(th) 1.0 rDS(on) Ohms Vdc V(BR)DSS 30 IDSS IGSS 5.0 ±100 nAdc µAdc Vdc Symbol Min Typ Max UnitMotorola SmallSignal Transistors, FETs and Diodes Device Data
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
The power dissipation of the is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the TSOP6 package, PD can be calculated as follows: PD = TJ(max) TA RJA
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. The delta temperature between the preheat and soldering should 100°C or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. The soldering temperature and time shall not exceed 260°C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient shall 5°C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature of 25°C, one can calculate the power dissipation of the device which in this case is 400 milliwatts. = 400 milliwatts
The 300°C/W for the TSOP6 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 400 milliwatts. There are other alternatives to achieving higher power dissipation from the TSOP6 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
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