Details, datasheet, quote on part number: MGSF3455XT1
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => P-Channel
CompanyON Semiconductor
DatasheetDownload MGSF3455XT1 datasheet
Cross ref.Similar parts: NTGS3455T1
Find where to buy


Features, Applications

Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors

Part of the GreenLine TM Portfolio of devices with energy­ conserving traits. These miniature surface mount MOSFETs utilize Motorola's High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc­dc converters, power management in portable and battery­ powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.mot­


Rating Drain­to­Source Voltage Gate­to­Source Voltage Continuous Drain Current Continuous = 25°C Drain Current Pulsed Drain Current (tp 10 µs) Total Power Dissipation = 25°C Operating and Storage Temperature Range Thermal Resistance Junction­to­Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 300 260 Unit Vdc mW °C °C/W °C

Device MGSF3455XT1 MGSF3455XT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000

GreenLine is a trademark of Motorola, Inc. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Transistors, FETs and Diodes Device Data © Motorola, Small­Signal Inc. 1997

Characteristic OFF CHARACTERISTICS Drain­to­Source Breakdown Voltage (VGS = 0 Vdc, = 10 µA) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, = 70°C) Gate­Body Leakage Current (VGS ± 20 Vdc, VDS ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, = 250 µAdc) Static Drain­to­Source On­Resistance (VGS = 10 Vdc, 1.45 A) (VGS = 4.5 Vdc, 1.2 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Gate Charge SOURCE­DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD = 15 Vdc, ID A, VGEN 10 ) td(on) tr td(off) pC ns (VDS 5.0 V) (VDS 5.0 V) (VDG 5.0 V) Ciss Coss Crss 10 pF VGS(th) 1.0 rDS(on) Ohms Vdc V(BR)DSS 30 IDSS IGSS 5.0 ±100 nAdc µAdc Vdc Symbol Min Typ Max Unit

Motorola Small­Signal Transistors, FETs and Diodes Device Data

Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection

interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.

The power dissipation of the is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the TSOP­6 package, PD can be calculated as follows: PD = TJ(max) ­ TA RJA

The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. The delta temperature between the preheat and soldering should 100°C or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. The soldering temperature and time shall not exceed 260°C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient shall 5°C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature of 25°C, one can calculate the power dissipation of the device which in this case is 400 milliwatts. = 400 milliwatts

The 300°C/W for the TSOP­6 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 400 milliwatts. There are other alternatives to achieving higher power dissipation from the TSOP­6 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.


Some Part number from the same manufacture ON Semiconductor
MGW12N120 Insulated Gate Bipolar Transistor N-channel
MGW12N120D Insulated Gate Bipolar Transistor With Anti-parallel Diode N-channel
MGW12N120E Insulated Gate Bipolar Transistor N-channel
MGW14N60ED Insulated Gate Bipolar Transistor
MGW20N120 Insulated Gate Bipolar Transistor N-channel
MGW21N60ED Insulated Gate Bipolar Transistor With Anti-parallel Diode N-channel
MGY25N120 Insulated Gate Bipolar Transistor N-channel
MGY25N120D Insulated Gate Bipolar Transistor With Anti-parallel Diode N-channel
MHW916 UHF Silicon Fet Power Amplifier
MJ10005 Switchmode Series NPN Silicon Power Darlington Transistor With Base-emitter Speedup Diode
MJ10007 Switchmode Series NPN Silicon Power Darlington Transistors With Base-emitter Speedup Diode
MJ10009 Switchmode Series NPN Silicon Power Darlington Transistor With Base-emitter Speedup Diode
MJ10012 NPN Silicon Power Darlington Transistor
MJ10015 Switchmode Series NPN Silicon Power Darlington Transistors With Base-emitter Speedup Diode
MJ10023 Switchmode Series NPN Silicon Power Darlington Transistor With Base-emitter Speedup Diode
MJ11012 Power 30A 60V Darlington NPN , Package: TO-204 (TO-3), Pins=2
MJ11013 PNP 30 Ampere Darlington Power Transistor

MC74AC74DT : Dual D-type Positive Edge Trigger, Package: Soic, Pins=14

MJB41C :

NCP585DSN09T1G : 300mA low Iq tri-mode LDO Regulator The NCP585 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy, low supply current, and high ripple rejection. These devices feature an enable function which lowers current co

NCP1835_0603 : Integrated Li−ion Charger

NTD60N02R-032G : Power Mosfet 60 Amps, 28 Volts

MM3Z3V3T1G : Zener Voltage Regulators

UC3842A-D08-T : High Performance Current Mode Controllers

LV8401V-TLM-E : Pmic - Motor And Fan Controllers, Driver Integrated Circuit (ics) Cut Tape (CT) 1.2A 2.7 V ~ 5.5 V; IC MOTOR DVR FORWARD/REV 16SSOP Specifications: Applications: DC Motor Driver ; Number of Outputs: 1 ; Voltage - Supply: 2.7 V ~ 5.5 V ; Voltage - Load: 4 V ~ 15 V ; Current - Output: 1.2A ; Operating Temperature: -20°C ~ 75°C ; Package / Case: 16-LSSOP (0.175", 4.40mm Width) ; Packaging: Cut Tape (CT) ; Lead Free Status: Lead Fre

LNLASB3157DFT2G : Interface - Analog Switches, Multiplexers, Demultiplexer Integrated Circuit (ics); IC SWITCH SPDT SOT363 Specifications: Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

SZMMBZ27VCLT1G : Tv - Diode Circuit Protection; TVS ZENER 40W 27V DUAL CC SOT23 Specifications: Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

Same catergory

1N2970 : Silicon 10 Watt Zener Diodes.

1N914B : Small Signal. High Conductance Fast Diode. Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings.

BA157GPthruBA159GP : . Glass Passivated Junction Fast Switching Rectifier Plastic package has Underwriters Laboratories Flammability Classification 94V-0 High temperature metallurgically bonded construction For use in high frequency rectifier circuits Fast switching for high efficiency Cavity-free glass passivated junction Capable of meeting environmental standards MIL-S-19500.

BUK481-100A/T1 : Transistor MOSFET. N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state.

DSD015 : Silicon Epitaxial Planar Type, High-voltage Switching Diode. Ideally suited for use in hybrid ICs because of very compact package. High breakdown voltage. s Parameter Peak Reverse Voltage Reverse Voltage Surge Current Average Rectified Current Peak Forward Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFSM IO IFM P Tj Tstg 1 µs Conditions Ratings to +125 Unit mA mW Parameter.

G5V-2-4.5DC : Relay PCB Dpco. computer peripherals, telecommunications and security equipment s Capable of switching loads A s Conforms to FCC part 1500 V surge withstand s Reliable bifurcated crossbar contacts To Order: Select the part number and add the desired coil voltage rating (e.g., G5V-2-DC12). Type Standard High-sensitivity Ultra-sensitive Contact form DPDT Construction.

IRF9510S : -100V Single P-channel HexFET Power MOSFET in a D2-Pak Package.

APT100DL60HJ : FRED Diode FULL BRIDGE FRED diode FULL BRIDGE. ISOTOP®Fast Diode Full Bridge Power Module Application Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) Benefits Outstanding.

03029-BR221AKZJ : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.00022 uF, SURFACE MOUNT, 0402. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 2.20E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

BST39TRL13 : 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN.

DT42-7502 : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Frequency: 600 to 3500 Hz ; Operating Temperature: -25 to 85 C (-13 to 185 F).

LHDM001161ANDV0E : 1 ELEMENT, 200 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, WIRE ; Standards and Certifications: RoHS ; Application: General Purpose ; Inductance Range: 200 microH ; Rated DC Current: 1000 milliamps.

RMW180N03TB : 18 A, 30 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0077 ohms ; Package Type: PLASTIC, SOP-8 ; Number of units in IC: 1.

RURD4120S9A_F085 : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier.

SG731J : RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 10; 20 %, 200; 400 ppm, 1 ohm - 1000000 ohm, SURFACE MOUNT, 0603. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0603, CHIP, ROHS COMPLIANT ; Operating DC Voltage: 50 volts ; Operating Temperature: -55 to 155 C (-67.

T0329S : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer.

1N5817G-BP : 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41. s: Package: DO-41, GLASS, DO-41G, 2 PIN ; Number of Diodes: 1 ; IF: 1000 mA ; RoHS Compliant: RoHS.

0-C     D-L     M-R     S-Z