Details, datasheet, quote on part number: MGSF3455VT1
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionP-channel MOSFET , Package: Tsop, Pins=6
CompanyON Semiconductor
DatasheetDownload MGSF3455VT1 datasheet
Cross ref.Similar parts: RQ6E030ATTCR, FDG311N, FDG315N, NTGS3455T1
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Features, Applications

Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors

Part of the GreenLine TM Portfolio of devices with energy­ conserving traits. These miniature surface mount MOSFETs utilize Motorola's High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc­dc converters, power management in portable and battery­ powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.mot­


Rating Drain­to­Source Voltage Gate­to­Source Voltage Continuous Drain Current Continuous = 25°C Drain Current Pulsed Drain Current (tp 10 µs) Total Power Dissipation = 25°C Mounted FR4 t Operating and Storage Temperature Range Thermal Resistance Junction­to­Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 62.5 260 Unit Vdc W °C °C/W °C

Device MGSF3455VT1 MGSF3455VT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000

GreenLine is a trademark of Motorola, Inc. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Transistors, FETs and Diodes Device Data © Motorola, Small­Signal Inc. 1997

Characteristic OFF CHARACTERISTICS Drain­to­Source Breakdown Voltage (VGS = 0 Vdc, = 10 µA) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, = 70°C) Gate­Body Leakage Current (VGS ± 20 Vdc, VDS ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, = 250 µAdc) Static Drain­to­Source On­Resistance (VGS = 10 Vdc, 3.5 A) (VGS = 4.5 Vdc, 2.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Gate Charge SOURCE­DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD = 15 Vdc, ID A, VGEN 10 ) td(on) tr td(off) pC ns (VDS 5.0 V) (VDS 5.0 V) (VDG 5.0 V) Ciss Coss Crss 10 pF VGS(th) 1.0 rDS(on) Ohms Vdc V(BR)DSS 30 IDSS IGSS 5.0 ±100 nAdc µAdc Vdc Symbol Min Typ Max Unit

Motorola Small­Signal Transistors, FETs and Diodes Device Data



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