Details, datasheet, quote on part number: MGSF2N02ELT1
PartMGSF2N02ELT1
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionPower MOSFET 2.8 Amps, 20 Volts, Package: SOT-23 (TO-236), Pins=3
CompanyON Semiconductor
DatasheetDownload MGSF2N02ELT1 datasheet
Cross ref.Similar parts: IRLML6244, IRLML2502, IRLML6246, IRLML2402, IRLML6246, IRLML6244, IRLML2502, RTR025N03TL, RUR020N02TL, FDN327N
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Features, Applications

These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.

Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT­23 Surface Mount Package Saves Board Space IDSS Specified at Elevated Temperature

Applications
DC­DC Converters Power Management in Portable and Battery Powered Products, ie:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones

Rating Drain­to­Source Voltage Gate­to­Source Voltage ­ Continuous Drain Current ­ Continuous 25°C ­ Single Pulse (tp = 10 ms) Total Power Dissipation = 25°C Operating and Storage Temperature Range Thermal Resistance ­ Junction­to­Ambient (Note 1) Thermal Resistance ­ Junction­to­Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds 1. 1" Pad, < 10 sec. 2. Min pad, steady state. Symbo l VDSS VGS ID IDM PD TJ, Tstg RJA Value W °C °C/W

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are recommended choices for future use and best overall value.

Characteristic OFF CHARACTERISTICS Drain­to­Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, = 10 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, = 125°C) Gate­Source Leakage Current (VGS $ 8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate­Source Threshold Voltage (VDS = VGS, = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain­to­Source On­Resistance (VGS = 4.5 Vdc, 3.6 A) (VGS = 2.5 Vdc, 3.1 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Gate Charge (VDS 16 Vd Vdc, ID Adc, Ad VGS = 4.0 Vdc) (Note 3) SOURCE­DRAIN DIODE CHARACTERISTICS Forward Voltage (IS = 1.0 Adc, VGS = 0 Vdc) (Note 3) Reverse Recovery Time (IS = 1.0 Adc, VGS = 0 Vdc, dlS/ = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature. trr ta tb QRR VSD ns V (VDD = 16 Vdc, = 2.8 Adc, Vgs 2.3 W) td(on) tr td(off) tf QT Qgs Qgd nC ns (VDS Vdc, Vdc VGS = 1.0 MHz) Ciss Coss Crss pF VGS(th) 0.5 ­ RDS(on) Vdc mV/°C mW V(BR)DSS 20 ­ IDSS ­ IGSS nA Vdc mV/°C mAdc Symbol Min Typ Max Unit

8 ID, DRAIN CURRENT (AMPS) VGS 10 V VGS 7 V VGS = 25°C ID, DRAIN CURRENT (AMPS) VGS V 5 VDS 10 V


 

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