Details, datasheet, quote on part number: MGSF1P02ELT1
PartMGSF1P02ELT1
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionPower MOSFET 750 Mamps, 20 Volts , Package: SOT-23 (TO-236), Pins=3
CompanyON Semiconductor
DatasheetDownload MGSF1P02ELT1 datasheet
Cross ref.Similar parts: BAS16, IPP80N06S2-05, MGSF1P02EL, NDS352AP, NTR1P02LT1, NTR1P02T1
Quote
Find where to buy
 
  

 

Features, Applications

These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc­dc converters and power management in portable and battery­powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT­23 Surface Mount Package Saves Board Space

Rating Drain­to­Source Voltage Gate­to­Source Voltage ­ Continuous Drain Current ­ Continuous 25°C ­ Pulsed Drain Current (tp 10 µs) Total Power Dissipation = 25°C Operating and Storage Temperature Range Thermal Resistance ­ Junction­to­Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value mW °C °C/W °C

Device MGSF1P02ELT1 MGSF1P02ELT3 Package SOT­23 Shipping 3000 Tape & Reel 10,000 Tape & Reel
Preferred devices are recommended choices for future use and best overall value.

Characteristic OFF CHARACTERISTICS Drain­to­Source Breakdown Voltage (VGS = 0 Vdc, = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, = 125°C) Gate­Body Leakage Current (VGS ± 8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, = 250 µAdc) Static Drain­to­Source On­Resistance (VGS = 4.5 Vdc, = 0.75 Adc) (VGS = 2.5 Vdc, = 0.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Total Gate Charge (VDS = 16 Vdc, = 1.5 Adc, VGS = 4.0 Vdc) (VDD = 5 Vdc, = 1.0 Adc, 6 ) td(on) tr td(off) pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss pF VGS(th) rDS(on) Vdc Ohms V(BR)DSS IDSS ­ IGSS nAdc 20 ­ Vdc µAdc Symbol Min Typ Max Unit

SOURCE­DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2.) (VGS = 0 Vdc, = 0.6 Adc) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. IS ISM VSD V A




 

Some Part number from the same manufacture ON Semiconductor
MGSF1P02ELT3 Power MOSFET 750 Mamps, 20 Volts
MGSF1P02ELT3 Power MOSFET 750 Mamps, 20 Volts, Package: SOT-23 (TO-236), Pins=3
MGSF1P02L Power MOSFET 750 Mamps, 20 Volts
MGSF1P02LT1 Power MOSFET 750 Mamps, 20 Volts , Package: SOT-23 (TO-236), Pins=3
MGSF1P02LT1G Power MOSFET 750 Mamps, 20 Volts
MGSF1P02LT3 Power MOSFET 750 Mamps, 20 Volts , Package: SOT-23 (TO-236), Pins=3
MGSF1P02LT3G Power MOSFET 750 Mamps, 20 Volts
MGSF2N02EL
MGSF2N02EL Power MOSFET 2.8 Amps, 20 Volts
MGSF2N02ELT1 Power MOSFET 2.8 Amps, 20 Volts, Package: SOT-23 (TO-236), Pins=3
MGSF2N02ELT1G Power MOSFET 2.8 Amps, 20 Volts
MGSF2N02ELT3 Power MOSFET 2.8 Amps, 20 Volts , Package: SOT-23 (TO-236), Pins=3
MGSF2N02ELT3G Power MOSFET 2.8 Amps, 20 Volts
MGSF2P02HD Tmos Field Effect Transistor
MGSF2P02HDT1 Power MOSFET 2 Amps, 20 Volts , Package: Tsop, Pins=6
MGSF2P02HDT3 Power MOSFET 2 Amps, 20 Volts, Package: Tsop, Pins=6
MGSF3441VT1 P-channel MOSFET , Package: Tsop, Pins=6
MGSF3441XT1
MGSF3442VT1 Power MOSFET 4 Amps, 20 Volts , Package: Tsop, Pins=6
MGSF3442XT1
MGSF3454VT1 Small Signal MOSFET's Tmos Single N-channel Field Effect Transistors , Package: Tsop, Pins=6

1N5821 : 3A 20V Schottky Rectifier , Package: Axial Lead, Pins=2

MMSZ4706T1 : Zener Regulator 1.8V , Package: SOD-123, Pins=2

NCP1605 : The NCP1605 is a controller that exhibits near unity power factor while operating in fixed frequency, Discontinuous Conduction Mode or in Critical Conduction Mode.Housed in a SOIC16 package, the circuit incorporates all the features necessary for building robust and compact PFC stages, with a minimu

BS107AG : Small Signal Mosfet 250 Mamps, 200 Volts

NCP301HSN31T1 : Voltage Detector Series

BZX84C3V9T-7-F : Zener Voltage Regulators

CAT28F010GI-90T : Memory Integrated Circuit (ics) FLASH Tape & Reel (TR) 4.5 V ~ 5.5 V; IC FLASH MEM 1MBIT 90NS 32PLCC Specifications: Memory Type: FLASH ; Memory Size: 1M (128K x 8) ; Speed: 90ns ; Interface: Parallel (Byte-wide) ; Package / Case: 32-PLCC ; Packaging: Tape & Reel (TR) ; Voltage - Supply: 4.5 V ~ 5.5 V ; Operating Temperature: -40°C ~ 85°C ; Format - Memory: FLASH ; Lead Free Status: Lead Free ;

NLSX3012DR2G : Logic - Translator Integrated Circuit (ics) Voltage Tape & Reel (TR) Voltage; TRANSLATOR 2BIT 100MBPS 8SOIC Specifications: Package / Case: 8-SOIC (0.154", 3.90mm Width) ; Packaging: Tape & Reel (TR) ; Input Type: Voltage ; Output Type: Voltage ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

Same catergory

2N3498 : NPN Transistor, Package : TO-39. Qualified per MIL-PRF-19500/366 Devices 2N3501 2N3501L Qualified Level JAN JANTX JANTXV JANS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation RJC 0 C/W 175 Junction-to-Ambient RJA *Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices 1) Derate.

2N5151 : Package = TO-39 ;; Level = Jans ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 5.5 ;; Ic (A) = 2.00 ;; (Power W) ta = 1.0 ;; Rtja ( C/W) = 175 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 90 ;; VCE(sat) (V) = 0.75.

2SC4571-T2 : NPN Silicon Epitaxial Transistor Super Mini Mold. NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD The is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super mini mold package. High : 5.0 GHz TYP. VCE = 5 mA, = 1 GHz) Low Cob 0.9 pF TYP. VCB = 1 MHz) Super Mini Mold Package. (EIAJ : SC-70) PART.

BAT17/T1 : Diode Schottky Sot-23. Low forward voltage Small SMD package Low capacitance. APPLICATIONS UHF mixer Sampling circuits Modulators Phase detection. Planar Schottky barrier diode in a small SOT23 plastic SMD package. PINNING PIN 2 3 anode not connected cathode Fig.1 Simplified outline (SOT23) and symbol. Marking code: A3p = made in Hong Kong; A3t = made in Malaysia. LIMITING.

FGL40N150D : Copak Discrete Igbt. Fairchild's Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. High speed switching Low saturation voltage : VCE(sat) = 40A High input impedance Built-in fast recovery diode Applications Home appliances, induction heaters, IH JAR, and microwave ovens.

SM120A : 1.0 Amp Surface Mount Schottky Barrier Rectifiers. * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Metallurgically bonded construction * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 0.063 grams Rating 25 C ambient temperature uniess otherwies.

SMCJ78A : 1500 Watt Transient Voltage Suppressors. Glass passivated junction. 1500 W Peak Pulse Power capability Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bidirectional. Typical IR less than 1.0 µA above 10V. UL certified, UL #E210467. COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL.

STD60N10 : Power MOSFETs N-channel 100V - 0.016& - 60A TO-220 / DPAK - Low RDS(on) Power MOSFET.

STD8N65M5 : Power MOSFETs N-channel 650 V, 0.56 ?, 7 A MDmesh™ V Power MOSFET in I˛PAK, TO-220, TO-220FP, DPAK and IPAK.

APT40DR160HJ : Standard Rectifier Diode FULL BRIDGE Standard rectifier diode FULL BRIDGE.

08053G333ZAJ2A : CAPACITOR, CERAMIC, MULTILAYER, 25 V, Y5V, 0.033 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0330 microF ; Capacitance Tolerance: 80 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mount Technology.

DRA3A43X : 80 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN.

STQ1004 : 0.46 A, 60 V, 3.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 3.5 ohms ; PD: 1300 milliwatts ; Number of units in IC: 4.

UMA0G101MDD1TE : CAP,AL2O3,100UF,4VDC,20% -TOL,20% +TOL. Standard series with 5mm height. Compliant to the RoHS directive (2002/95/EC). s Item Category Temperature Range Rated Voltage Range Rated Capacitance Range Rated Capacitance Tolerance Leakage Current Tangent of loss angle (tan ) Performance Characteristics 120Hz, 20°C After 2 minutes' application of rated voltage, leakage current is not more than or 3(µA),.

2SD2138R : 2 A, 60 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: MT4, 3 PIN.

 
0-C     D-L     M-R     S-Z