Details, datasheet, quote on part number: MGSF1N03L
PartMGSF1N03L
Category
DescriptionPower MOSFET 750 Mamps, 30 Volts
CompanyON Semiconductor
DatasheetDownload MGSF1N03L datasheet
Cross ref.Similar parts: RTR025N03TL, RQ5E030AJTCL, SSM3K336R, MGSF1N03LT1, MGSF1N03LT3
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Features, Applications

These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT-23 Surface Mount Package Saves Board Space

Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State 10 s Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current ESD Capability (Note 3) Steady State Steady State = 100 pF, W PD IDM ESD TJ, TSTG PD ID Symbol VDSS VGS ID Value N3 W Symbol RqJA Max 100 300 Unit °C/W SOT-23 CASE 318 STYLE 21 1 Gate N3W 3 Drain Unit V A

Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)

Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2)

1. Surface-mounted on FR4 board using in sq pad size. 2. Surface-mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0.

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, = 10 mAdc) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, = 125°C) Gate-Body Leakage Current (VGS ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, = 250 mAdc) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, = 1.2 Adc) (VGS = 4.5 Vdc, = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (See Figure 6) SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. IS ISM VSD V A (VDD = 15 Vdc, = 1.0 Adc, 50 W) td(on) tr td(off) pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss pF VGS(th) rDS(on) Vdc Ohms V(BR)DSS IDSS - IGSS nAdc 30 - Vdc mAdc Symbol Min Typ Max Unit




 

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