Details, datasheet, quote on part number: MGSF1N02ELT1
PartMGSF1N02ELT1
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionPower MOSFET 750 Mamps, 20 Volts , Package: SOT-23 (TO-236), Pins=3
CompanyON Semiconductor
DatasheetDownload MGSF1N02ELT1 datasheet
Cross ref.Similar parts: NTR4501NT1G, RUR020N02TL, FDN335N, MGSF1N02EL, MGSF2N02ELT1, MGSF2N02ELT3, NDS335N, NDS355AN
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Features, Applications

These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc­dc converters and power management in portable and battery­powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT­23 Surface Mount Package Saves Board Space

Rating Drain­to­Source Voltage Gate­to­Source Voltage ­ Continuous Drain Current ­ Continuous 25°C ­ Pulsed Drain Current (tp 10 µs) Total Power Dissipation = 25°C Operating and Storage Temperature Range Thermal Resistance ­ Junction­to­Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value mW °C °C/W °C

Device MGSF1N02ELT1 MGSF1N02ELT3 Package SOT­23 Shipping 3000 Tape & Reel 10,000 Tape & Reel
Preferred devices are recommended choices for future use and best overall value.

Characteristic OFF CHARACTERISTICS Drain­to­Source Breakdown Voltage (VGS = 0 Vdc, = 10 µA) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, = 125°C) Gate­Source Leakage Current (VGS ± 8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.) Gate­Source Threshold Voltage (VDS = VGS, = 250 µAdc) Static Drain­to­Source On­Resistance (VGS = 4.5 Vdc, 1.0 A) (VGS = 2.5 Vdc, 0.75 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Total Gate Charge (VDS = 16 Vdc, = 1.2 Adc, VGS = 4.0 Vdc) (VDD = 5 Vdc, = 1.0 Adc, 6 ) td(on) tr td(off) pC ns (VDS = 5.0 Vdc, VGS = 1.0 Mhz) (VDS = 5.0 Vdc, VGS = 1.0 Mhz) (VDG = 5.0 Vdc, VGS = 1.0 Mhz) Ciss Coss Crss pF VGS(th) rDS(on) Vdc Ohms V(BR)DSS IDSS ­ IGSS µAdc 20 ­ Vdc µAdc Symbol Min Typ Max Unit

SOURCE­DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2.) (VGS = 0 Vdc, = 0.6 Adc) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. IS ISM VSD V A



 

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