Details, datasheet, quote on part number: MGS05N60D
PartMGS05N60D
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => Medium Voltage 600-1199 Volts
TitleMedium Voltage 600-1199 Volts
DescriptionInsulated Gate Bipolar Transistor N-channel
CompanyON Semiconductor
DatasheetDownload MGS05N60D datasheet
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Features, Applications

This IGBT contains a built­in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts. Built­In Free Wheeling Diodes Built­In Gate Protection Zener Diode Industry Standard Package (TO92 1.0 Watt) High Speed Eoff: Typical = 125°C and dV/dt = 1000 V/ms Robust High Voltage Termination Robust Turn­Off SOA

Parameters Collector­Emitter Voltage Collector­Gate Voltage (RGE 1.0 M) Gate­Emitter Voltage Continuous Collector Current Continuous = 25°C Collector Current Continuous = 90°C Collector Current Repetitive Pulsed Current (1) Total Power Dissipation Operating and Storage Junction Temperature Range Symbol VCES VCGR VGES IC25 IC90 ICM PD TJ, Tstg Value to 150 Unit Vdc Adc

Thermal Resistance Junction to Case ­ IGBT Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds RJC RJA 125 260 °C/W °C

Single Pulse Drain­to­Source Avalanche Energy ­ Starting = 25°C Energy ­ Starting = 125°C VCE 100 V, VGE 15 V, Peak = 3.0 mH, W (1) Pulse width is limited by maximum junction temperature repetitive rating.

Designer's Data for "Worst Case" Conditions The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate "worst case" design.

Characteristic OFF CHARACTERISTICS Collector­to­Emitter Breakdown Voltage (VGE = 0 Vdc, = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, = 125°C) Gate­Body Leakage Current (VGE ± 15 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS Collector­to­Emitter On­State Voltage (VGE = 15 Vdc, = 0.3 Adc) (VGE = 15 Vdc, = 0.3 Adc, = 125°C) Gate Threshold Voltage (VCE = VGE, = 250 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, = 0.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 0.3 Adc) (IEC = 0.3 Adc, = 125°C) (IEC = 0.1 Adc) (IEC = 0.1 Adc, = 125°C) Reverse Recovery Time Reverse Recovery Stored Charge SWITCHING CHARACTERISTICS (1) Turn­Off Delay Time Fall Time Turn­Off Switching Loss Turn­Off Delay Time Fall Time Turn­Off Switching Loss Gate Charge (VCC = 300 Vdc, = 0.4 Adc, VGE 15 Vd Vdc, L mH, 25 , dV/dt = 1000 V/ms) Energy losses include "tail" (VCC = 300 Vdc, = 0.4 Adc, VGE 15 Vd Vdc, L mH, = 125°C, dV/dt = 1000 V/ms) Energy losses include "tail" (VCC = 300 Vdc, = 0.3 Adc, VGE = 15 Vdc) td(off) tf Eoff td(off) tf Eoff QT ns (IF = 0.4 Adc, = 300 Vdc, , dIF/dt = 10 A/ms) VFEC trr QRR ns Vdc (VCE = 20 Vdc, Vdc VGE = 0 Vdc, Vdc = 1.0 MHz) Cies Coes Cres pF VCE(on) VGE(th) 3.5 gfe Vdc mV/°C Mhos Vdc V(BR)CES 600 ICES IGES Vdc V/°C µAdc Symbol Min Typ Max Unit

(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2.5 ICE, COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) VGE 150°C 2.0 VGE 10 V
Figure 4. Collector­To­Emitter Saturation Voltage versus Case Temperature
Figure 6. Diode Forward Voltage versus Case Temperature

 

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