Details, datasheet, quote on part number: MGP7N60E
PartMGP7N60E
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => Medium Voltage 600-1199 Volts
TitleMedium Voltage 600-1199 Volts
DescriptionInsulated Gate Bipolar Transistor N-channel
CompanyON Semiconductor
DatasheetDownload MGP7N60E datasheet
Cross ref.Similar parts: SGP06N60, SGP13N60UF, SGP5N60RUF
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Features, Applications

Designer'sTM Data Sheet Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage­blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E­series introduces an energy efficient, ESD protected, and short circuit rugged device. Industry Standard TO­220 Package High Speed: Eoff = 70 mJ/A typical at 125°C High Voltage Short Circuit Capability 10 ms minimum 400 V Low On­Voltage 2.0 V typical A, 125°C Robust High Voltage Termination ESD Protection Gate­Emitter Zener Diodes

IGBT 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON­VOLTAGE

Rating Collector­Emitter Voltage Collector­Gate Voltage (RGE 1.0 M) Gate­Emitter Voltage Continuous Collector Current Continuous = 25°C Collector Current Continuous = 90°C Collector Current Repetitive Pulsed Current (1) Total Power Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, 20 ) Thermal Resistance Junction to Case ­ IGBT Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating.

Designer's Data for "Worst Case" Conditions The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate "worst case" design.

Characteristic OFF CHARACTERISTICS Collector­to­Emitter Breakdown Voltage (VGE = 0 Vdc, = 25 µAdc) Temperature Coefficient (Positive) Emitter­to­Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, = 125°C) Gate­Body Leakage Current (VGE ± 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector­to­Emitter On­State Voltage (VGE = 15 Vdc, = 2.5 Adc) (VGE = 15 Vdc, = 2.5 Adc, = 125°C) (VGE = 15 Vdc, = 5.0 Adc) Gate Threshold Voltage (VCE = VGE, = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, = 5.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Turn­Off Switching Loss Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Turn­Off Switching Loss Gate Charge (VCC = 360 Vdc, Vd IC Adc, Ad VGE = 15 Vdc) INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 7.5 nH (VCC = 360 Vdc, = 5.0 Adc, , VGE 15 Vd Vdc, = 125°C) Energy losses include "tail" (VCC = 360 Vdc, = 5.0 Adc, , VGE 15 Vd Vdc, 20 ) Energy losses include "tail" td(on) tr td(off) tf Eoff td(on) tr td(off) tf Eoff mJ ns (VCE = 25 Vdc, Vd VGE = 0 Vdc, = 1.0 MHz) Cies Coes Cres 10 pF VCE(on) VGE(th) 4.0 gfe Vdc mV/°C Mhos Vdc V(BR)CES 600 V(BR)ECS ICES IGES 200 50 mAdc 15 870 Vdc mV/°C Vdc µAdc Symbol Min Typ Max Unit

IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) V 10 VGE 15 V



 

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