Details, datasheet, quote on part number: MGP20N35CL
PartMGP20N35CL
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => Low Voltage < 600 Volts
TitleLow Voltage < 600 Volts
DescriptionSmartdiscretes Internally Clamped N-channel Igbt
CompanyON Semiconductor
DatasheetDownload MGP20N35CL datasheet
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Features, Applications

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate­Emitter ESD protection, Gate­Collector overvoltage protection from SMARTDISCRETESTM monolithic circuitry for usage as an Ignition Coil Driver. Temperature Compensated Gate­Collector Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors Low Saturation Voltage High Pulsed Current Capability

20 AMPERES VOLTAGE CLAMPED N­CHANNEL IGBT VCE(on) = 1.8 VOLTS 350 VOLTS (CLAMPED)

Rating Collector­Emitter Voltage Collector­Gate Voltage Gate­Emitter Voltage Collector Current Continuous = 25°C Reversed Collector Current ­ pulse width Symbol VCES VCGR VGE Value CLAMPED to 175 Unit Vdc Adc Apk Watts kV °C

Total Power Dissipation 25°C (TO­220) Electrostatic Voltage Gate­Emitter Operating and Storage Temperature Range

Thermal Resistance Junction to Case ­ (TO­220) Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, or M3 screw RqJC RqJA TL lbfin (1.13 Nm) °C/W °C

Single Pulse Collector­Emitter Avalanche Energy @ Starting 25°C @ Starting = 150°C SMARTDISCRETES is a trademark of Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Characteristic OFF CHARACTERISTICS Collector­to­Emitter Breakdown Voltage (IClamp = 10 mA, to 150°C) Zero Gate Voltage Collector Current (VCE 250 V, VGE = 125°C) (VCE 15 V, VGE = 125°C) Resistance Gate­Emitter (TJ to 150°C) Gate­Emitter Breakdown Voltage (IG = 2 mA) Collector­Emitter Reverse Leakage (VCE to 150°C) Collector­Emitter Reversed Breakdown Voltage (IE = 75 mA) ON CHARACTERISTICS (1) Gate Threshold Voltage (VCE = VGE, = 1 mA) (VCE = VGE, = 1 mA, = 150°C) Collector­Emitter On­Voltage (VGE 5 A) (VGE 10 A) (VGE = 10 Adc, = 150°C) Forward Transconductance (VCE DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Total Gate Charge Gate­Emitter Charge Gate­Collector Charge Turn­Off Delay Time Fall Time Turn­On Delay Time Rise Time = 200 mH, = 1 KW) (VCC = 200 mH, = 1 KW) (VCC A, A VGE V) Qg Qge Qgc td(off) tf td(on) 8.0 20 TBD 80 TBD µs nC (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc = 1.0 MHz) Cies Coes Cres 25 pF VGE(th) 1.0 0.75 VCE(on) gfe 1.8 V V(BR)CES 320 ICES RGE V(BR)GES IECS V(BR)ECS 350 380 Vdc Symbol Min Typ Max Unit

(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
Motorola TMOS Power MOSFET Transistor Device Data
40 VGE = 10 COLLECTOR CURRENT (AMPS) 20 40 VGE = 10 COLLECTOR CURRENT (AMPS) 20 5V

Figure 4. Collector­to­Emitter Saturation Voltage versus Junction Temperature

 

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