Details, datasheet, quote on part number: MGP20N14CL
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => Low Voltage < 600 Volts
TitleLow Voltage < 600 Volts
DescriptionSmartdiscretes Internally Clamped N-channel Igbt
CompanyON Semiconductor
DatasheetDownload MGP20N14CL datasheet
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Features, Applications

Product Preview SMARTDISCRETESTM Internally Clamped, N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate­Emitter ESD protection, Gate­Collector overvoltage protection from SMARTDISCRETESTM monolithic circuitry for usage as an Ignition Coil Driver. Temperature Compensated Gate­Collector Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors Low Saturation Voltage High Pulsed Current Capability


Rating Collector­Emitter Voltage Collector­Gate Voltage Gate­Emitter Voltage Collector Current Continuous Collector Current Single Pulsed (tp = "10 ms) Total Power Dissipation (TO­220) Derate Above 25°C Operating and Storage Temperature Range Single Pulse Collector­Emitter Avalanche Energy @ Starting = 25°C (VCC 80 V, VGE 5 V, Peak = 10 mH) Symbol VCES VCGR VGE IC ICM PD TJ, Tstg EAS 500 Value CLAMPED to 175 Unit Vdc Adc Apk Watts W/°C °C mJ

Thermal Resistance Junction to Case ­ (TO­220) Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, or M3 screw SMARTDISCRETES is a trademark of Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Characteristic OFF CHARACTERISTICS Clamp Voltage (IClamp = 10 mA, to 150°C) Zero Gate Voltage Collector Current (VCE 100 V, VGE 0 V) (VCE 100 V, VGE = 150°C) Gate­Emitter Clamp Voltage (IG = 1 mA) Gate­Emitter Leakage Current (VGE "5 V, VCE V) ON CHARACTERISTICS (1) Gate Threshold Voltage (VCE = VGE, = 1 mA) Threshold Temperature Coefficient (Negative) Collector­Emitter On­Voltage (VGE 10 A) (VGE = 10 Adc, = 175°C) Forward Transconductance (VCE 10 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Total Gate Charge Gate­Emitter Charge Gate­Collector Charge (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (VCC A A, VGE 5 V) (VCC 20 A, VGE 9.1 W) td(on) tr td(off) tf QT Qge Qgc TBD 3.0 6.0 TBD nC ns (VCE = 25 Vdc, Vd VGE = 0 Vdc, = 1.0 MHz) Cies Coes Cres pF VGE(th) 1.0 VCE(on) gfe Mhos 4.4 2.0 mV/°C V V(BR)CES 135 ICES V(BR)GES IGES Vdc mA Vdc Symbol Min Typ Max Unit

Motorola TMOS Power MOSFET Transistor Device Data


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