Details, datasheet, quote on part number: MGP15N35CL
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors)
DescriptionIgnition Igbt 15 Amps, 350 Volts , Package: TO-220, Pins=3
CompanyON Semiconductor
DatasheetDownload MGP15N35CL datasheet
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Features, Applications

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over­Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Ideal for Coil­On­Plug, IGBT­On­Coil, or Distributorless Ignition System Applications High Pulsed Current Capability 50 A Gate­Emitter ESD Protection Temperature Compensated Gate­Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage Optional Gate Resistor (RG)

Rating Collector­Emitter Voltage Collector­Gate Voltage Gate­Emitter Voltage Collector Current­Continuous 25°C ­ Pulsed ESD (Human Body Model) 100 pF ESD (Machine Model) 200 pF Total Power Dissipation = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD 8.0 ESD PD TJ, Tstg 175 V Watts W/°C °C G15N35CL YWW 1 Gate 2 Collector Unit mJ 3 Emitter G15N35CL YWW Value Unit VDC ADC AAC 3 TO­220AB CASE 221A STYLE 9

Characteristic Single Pulse Collector­to­Emitter Avalanche Energy VCC 50 V, VGE = 2.0 mH, Starting = 25°C VCC 50 V, VGE = 2.0 mH, Starting = 150°C Reverse Avalanche Energy VCC 100 V, VGE = 3.0 mH, 25.8 A, Starting = 25°C Symbol EAS 300 Value

Preferred devices are recommended choices for future use and best overall value.

Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO­220 D2PAK (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Symbol RJC RJA TL Value °C Unit °C/W

Characteristic Symbol Test Conditions Temperature Min Typ Max Unit

Collector­Emitter Collector Emitter Clamp Clam Voltage BVCES 10 mA Zero Gate Voltage g Collector Current ICES VCE V V, VGE 0 V Reverse Collector­Emitter Leakage g Current IECS VCE = ­40°C Reverse Collector­Emitter Clamp Voltage g BVCES(R) = ­40°C Gate­Emitter Clamp Voltage Gate­Emitter Leakage Current Gate Resistor (Optional) Gate Emitter Resistor BVGES IGES RG RGE 5.0 mA VGE to 150°C VDC µADC k VDC mA µADC VDC

1. When surface mounted an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range.

Input Capacitance Output Capacitance Transfer Capacitance CISS COSS CRSS = 150°C VCC V V, VGE 1.0 MHz 150°C pF

3. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range.


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