Details, datasheet, quote on part number: MGP11N60ED
PartMGP11N60ED
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => Medium Voltage 600-1199 Volts
TitleMedium Voltage 600-1199 Volts
DescriptionInsulated Gate Bipolar Transistor N-channel
CompanyON Semiconductor
DatasheetDownload MGP11N60ED datasheet
Cross ref.Similar parts: STGP6NC60HD, STGPL6NC60D, STGP7H60DF, STGPL6NC60DI, SKP10N60A
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Features, Applications

Designer'sTM Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co­packaged with a soft recovery ultra­fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage­blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co­packaged IGBTs save space, reduce assembly time and cost. This new E­series introduces an energy efficient, ESD protected, and rugged short circuit device. Industry Standard TO­220 Package High Speed: Eoff 60 mJ per Amp typical at 125°C High Voltage Short Circuit Capability 10 ms minimum 400 V Low On­Voltage 2.0 V typical 8.0 A Soft Recovery Free Wheeling Diode is included in the Package Robust High Voltage Termination ESD Protection Gate­Emitter Zener Diodes

IGBT & DIODE 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON­VOLTAGE

Rating Collector­Emitter Voltage Collector­Gate Voltage (RGE 1.0 M) Gate­Emitter Voltage Continuous Collector Current Continuous = 25°C Continuous = 90°C Repetitive Pulsed Current (1) Total Power Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, 20 ) Thermal Resistance Junction to Case ­ IGBT Junction to Case ­ Diode Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating.

Designer's Data for "Worst Case" Conditions The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate "worst case" design.

Characteristic OFF CHARACTERISTICS Collector­to­Emitter Breakdown Voltage (VGE = 0 Vdc, = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, = 125°C) Gate­Body Leakage Current (VGE ± 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector­to­Emitter On­State Voltage (VGE = 15 Vdc, = 4.0 Adc) (VGE = 15 Vdc, = 4.0 Adc, = 125°C) (VGE = 15 Vdc, = 8.0 Adc) Gate Threshold Voltage (VCE = VGE, = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, = 8.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Turn­Off Switching Loss Turn­On Switching Loss Total Switching Loss Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Turn­Off Switching Loss Turn­On Switching Loss Total Switching Loss Gate Charge Vd IC Adc, Ad (VCC = 360 Vdc, VGE = 15 Vdc) DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 3.25 Adc) (IEC = 3.25 Adc, = 125°C) (IEC = 6.5 Adc) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. VFEC (continued) Vdc (VCC = 360 Vdc, = 8.0 Adc, , VGE 15 Vd Vdc, = 125°C) Energy losses include "tail" (VCC = 360 Vdc, = 8.0 Adc, , VGE 15 Vd Vdc, 20 ) Energy losses include "tail" td(on) tr td(off) tf Eoff Eon Ets td(on) tr td(off) tf Eoff Eon Ets mJ ns (VCE = 25 Vdc, Vd VGE = 0 Vdc, = 1.0 MHz) Cies Coes Cres 13 pF VCE(on) VGE(th) 4.0 gfe Vdc mV/°C Mhos Vdc V(BR)CES 600 ICES IGES 200 50 µAdc 870 Vdc mV/°C µAdc Symbol Min Typ Max Unit

ELECTRICAL CHARACTERISTICS continued (TJ = 25°C unless otherwise noted)

Characteristic DIODE CHARACTERISTICS continued Reverse Recovery Time (IF = 8.0 Adc, = 360 Vdc, dIF/dt = 200 A/µs) Reverse Recovery Stored Charge Reverse Recovery Time (IF = 8.0 Adc, = 360 Vdc, dIF/dt = 200 A/µs, = 125°C) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) IC , COLLECTOR CURRENT (AMPS) = 25°C VGE IC , COLLECTOR CURRENT (AMPS) = 125°C VGE 7.5 nH trr ta tb QRR trr ta tb QRR µC ns Symbol Min Typ Max Unit


Figure 4. Collector­To­Emitter Saturation Voltage versus Junction Temperature

 

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