Details, datasheet, quote on part number: NTE5460
PartNTE5460
CategoryDiscrete => Thyristors => SCR (Silicon Controlled Rectifiers)
DescriptionSilicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 800V. On-state RMS Current it = 25A.
CompanyNTE Electronics, Inc.
DatasheetDownload NTE5460 datasheet
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Features, Applications

Description: The NTE5460 is designed primarily for half­wave AC control applications such as motor controls, heating controls, and power supply crowbar circuits. Features: D Glass Passivated Junction with Center Gate Fire for Greater Parameter Uniformity and Stability D Small, Rugged Construction for Low Thermal Resistance, High Heat Dissipation, and Durability D 300A Surge Current Capability D Insulated Package Simplifies Mounting Absolute Maximum Ratings: Repetitive Peak Off­State Voltage (TJ to +125°C, Note 1), VDRM. 800V Repetitive Peak Reverse Voltage (TJ to +125°C, Note 1), VRRM. 800V On­State RMS Current (TC = +70°C, Full Cycle Sine Wave to 60Hz, Note 2), IT(RMS). 25A Peak Non­Repetitive Surge Current, ITSM (One Full Cycle, = +70°C, Preceeded and Followed by Rated Current). 300A Circuit Fusing I2t. 375A2s Peak Gate Power (TC = +70°C, Pulse Width = 10µs), PGM. 20W Average Gate Power (TC = 8.3ms), PG(AV). 0.5W Peak Gate Current (TC = +70°C, Pulse Width = 10µs), IGM. 2A RMS Isolation Voltage (TA = +25°C, Relative Humidity 20%), V(ISO). 1500V Operating Junction Temperature, TJ. to +125°C Storage Temperature Range, Tstg. to +125°C Maximum Thermal Resistance, Junction­to­Case, RthJC. 1.5°C/W Typical Thermal Resistance, Case­to­Sink, RthCS. 2.2°C/W Maximum Thermal Resistance, Junction­to­Ambient, RthJA. 60°C/W Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. Note 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.

Parameter Peak Forward Blocking Current Symbol IDRM IRRM VTM IGT VGT VGD IH tgt tq dv/dt Test Conditions VDRM = +25°C VDRM = +125°C Peak Reverse Blocking Current Forward "ON" Voltage DC Gate Trigger Current DC Gate Trigger Voltage Gate Non­Trigger Voltage Holding Current Turn­On Time Turn­Off Time VRRM = +125°C ITM = 50A, Note 3 Anode Voltage = 100 Anode Voltage = 100 Anode Voltage = +125°C Anode Voltage = 12V ITM = 25A, IGT = 40mA VDRM = 800V, ITM = 25A VDRM = 800V, ITM = +125°C Critical Rate of Rise of Off­State Voltage Gate Open, VDRM = 800V, Exponential Waveform Min Typ Max Unit mA µs V/µs

Note 3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.

 

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