Details, datasheet, quote on part number: NTE5456
PartNTE5456
CategoryDiscrete => Thyristors => SCR (Silicon Controlled Rectifiers)
DescriptionSilicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 30V. RMS On-state Current it = 4A.
CompanyNTE Electronics, Inc.
DatasheetDownload NTE5456 datasheet
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Features, Applications
NTE5452 thru NTE5458 Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR's a TO202 type package designed to be driven directly with IC and MOS devices. These reverse­blocking triode thyristors may be switched from off­state to conduction by a current pulse applied to the gate terminal. They are designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +100°C), VRRM NTE5458. 600V Repetitive Peak Off­State Voltage (TC = +100°C), VDRXM NTE5458. 600V RMS On­State Current, IT(RMS). 4A Peak Surge (Non­Repetitive) On­State Current (One Cycle or 60Hz), ITSM. 20A Peak Gate­Trigger Current (3µs Max), IGTM. 1A Peak Gate­Power Dissipation (IGT IGTM for 3µs Max), PGM. 20W Average Gate Power Dissipation, PG(AV). 200mW Operating Temperature Range, Topr. to +100°C Storage Temperature Range, Tstg. to +150°C Typical Thermal Resistance, Junction­to­Case, RthJC. +5°C/W

Parameter Peak Off­State Current Maximum On­State Voltage DC Holding Current DC Gate­Trigger Current DC Gate­Trigger Voltage Total Gate Controlled Turn­On Time I2t for Fusing Reference Critical rate of Applied Forward Voltage Symbol IRRM IDRXM VTM IHOLD IGT VGT tgt I2t Test Conditions VRRM = Max, VDRXM = Max, = +100°C, RG­K = 4A (Peak) > 1.5msoc Min Typ Max Unit µs A2sec V/µs


 

Related products with the same datasheet
NTE5453
NTE5454
NTE5455
NTE5457
NTE5458
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