Details, datasheet, quote on part number: NTE5448
PartNTE5448
CategoryDiscrete => Thyristors => SCR (Silicon Controlled Rectifiers)
DescriptionSilicon Controlled Rectifier (SCR). Peak Repetitive Forward And Reverse Blocking Voltage Vrrm(or Vdrm) = 50V. RMS On-state Current it = 8A.
CompanyNTE Electronics, Inc.
DatasheetDownload NTE5448 datasheet
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Features, Applications

Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR's) a TO127 type package designed for high - volume consumer phase - control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltage regulators, vending machines, and lamp drivers. Features: D Small, Rugged Construction D Practical Level Triggering and Holding Characteristics @ +25C: IGT = 7mA Typ IHold = 6mA Typ D Low "ON" Voltage: VTM = 1V Typ +25C D High Surge Current Rating: ITSM = 80A Absolute Maximum Ratings: (Note = +100C unless otherwise specified) Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), VDRM or VRRM NTE5448. 600V Non - Repetitive Peak Reverse Blocking Voltage = 5ms (max) duration), VRSM NTE5448. 700V RMS On - State Current (All Conduction Angles), IT(RMS). 8A Average On - State Current (TC = +73C), IT(AV). 5.1A Peak Non - Repetitive Surge Current, ITSM (1/2 cycle, 60Hz preceeded and followed by rated current and voltage). 80A Circuit Fusing (TJ I2t. 25A2sec Peak Gate Power, PGM. 5W Average Gate Power, PG(AV). 500mW Peak Forward Gate Current, IGM. 2A Peak Reverse Gate Voltage, VRGM. 10V Operating Junction Temperature Range, TJ. to +100C Storage Temperature Range, Tstg. to +150C Maximum Thermal Resistance, Junction to - Case, RthJC. 2.5C/W Typical Thermal Resistance, Junction to - Ambient, RthJA. 40C/W Note is a discontinued device and is replaced by NTE5448. Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied concurrently with a negative potential on the anode. When checking forward or reverse blocking capability, thyristor devices should not be tested with a constant current source in a manner that the voltage applied exceeds the rated blocking voltage.

Parameter Peak Forward or Reverse Blocking Current Gate Trigger Current (Continuous DC) Gate Trigger Voltage (Continuous DC) Symbol IDRM, IRRM IGT VGT Test Conditions Rated VDRM or VRRM, Gate Open = +25C TJ= VD = Rated VDRM, = +100C Peak On-State Voltage VTM IHold tgt tq dv/dt Pulse Width to 2 ms, ITM = 5Apeak Duty Cycle 2% ITM = 7V, Gate Open = -40C Gate Controlled Turn-On Time Circuit Commutated Turn-Off Time Critical Rate-of-Rise of Off-State Voltage ITM = 5A, IGT VD = Rated VDRM ITM = 5A TJ= VD = Rated VDRM, Exponential Waveform, = +100C, Gate Open Min 0.2 Typ Max Unit mA s V/s


 

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