Details, datasheet, quote on part number: NTE5442
PartNTE5442
CategoryDiscrete => Thyristors => SCR (Silicon Controlled Rectifiers)
DescriptionSilicon Controlled Rectifier (SCR). Peak Repetitive Forward And Reverse Blocking Voltage Vrrm(or Vdrm) = 50V. RMS On-state Current it = 8A.
CompanyNTE Electronics, Inc.
DatasheetDownload NTE5442 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR's) a TO127 type package designed for high - volume consumer phase - control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltage regulators, vending machines, and lamp drivers. Features: D Small, Rugged Construction D Practical Level Triggering and Holding Characteristics @ +25C: IGT = 7mA Typ IHold = 6mA Typ D Low "ON" Voltage: VTM = 1V Typ +25C D High Surge Current Rating: ITSM = 80A Absolute Maximum Ratings: (Note = +100C unless otherwise specified) Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), VDRM or VRRM NTE5448. 600V Non - Repetitive Peak Reverse Blocking Voltage = 5ms (max) duration), VRSM NTE5448. 700V RMS On - State Current (All Conduction Angles), IT(RMS). 8A Average On - State Current (TC = +73C), IT(AV). 5.1A Peak Non - Repetitive Surge Current, ITSM (1/2 cycle, 60Hz preceeded and followed by rated current and voltage). 80A Circuit Fusing (TJ I2t. 25A2sec Peak Gate Power, PGM. 5W Average Gate Power, PG(AV). 500mW Peak Forward Gate Current, IGM. 2A Peak Reverse Gate Voltage, VRGM. 10V Operating Junction Temperature Range, TJ. to +100C Storage Temperature Range, Tstg. to +150C Maximum Thermal Resistance, Junction to - Case, RthJC. 2.5C/W Typical Thermal Resistance, Junction to - Ambient, RthJA. 40C/W Note is a discontinued device and is replaced by NTE5448. Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied concurrently with a negative potential on the anode. When checking forward or reverse blocking capability, thyristor devices should not be tested with a constant current source in a manner that the voltage applied exceeds the rated blocking voltage.

Parameter Peak Forward or Reverse Blocking Current Gate Trigger Current (Continuous DC) Gate Trigger Voltage (Continuous DC) Symbol IDRM, IRRM IGT VGT Test Conditions Rated VDRM or VRRM, Gate Open = +25C TJ= VD = Rated VDRM, = +100C Peak On-State Voltage VTM IHold tgt tq dv/dt Pulse Width to 2 ms, ITM = 5Apeak Duty Cycle 2% ITM = 7V, Gate Open = -40C Gate Controlled Turn-On Time Circuit Commutated Turn-Off Time Critical Rate-of-Rise of Off-State Voltage ITM = 5A, IGT VD = Rated VDRM ITM = 5A TJ= VD = Rated VDRM, Exponential Waveform, = +100C, Gate Open Min 0.2 Typ Max Unit mA s V/s


 

Related products with the same datasheet
NTE5443
NTE5444
NTE5445
NTE5446
NTE5447
NTE5448
Some Part number from the same manufacture NTE Electronics, Inc.
NTE5443 Silicon Controlled Rectifier (SCR). Peak Repetitive Forward And Reverse Blocking Voltage Vrrm(or Vdrm) = 50V. RMS On-state Current it = 8A.
NTE5452 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 30V. RMS On-state Current it = 4A.
NTE5460 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 800V. On-state RMS Current it = 25A.
NTE5461 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage, Repetitive Peak Off-state Voltage Vrrm,vdrm = 50V. RMS Forward Current it = 10A.
NTE5470 Silicon Controlled Rectifier (SCR). Peak Repetitive Reverse And Reverse Blocking Voltage Vrrm,vdrm = 50V. Forward Current RMS Itrms = 8A.
NTE5480
NTE5487 Silicon Controlled Rectifier ( SCR ) 8 Amp
NTE5491 Silicon Controlled Rectifier (SCR), 10 Amp. Peak Repetitive Off-state Blocking Voltage Vrrm,vdrm = 100V. RMS On-state Current Itrms = 25A.
NTE5498 Silicon Controlled Rectifier (SCR). Peak Repetitive Off-state Blocking Voltage Vrrm,vdrm = 400V. RMS On-state Current Itrms = 12A.
NTE54MP NTE54 (NPN) & NTE55 (PNP), Silicon Complementary Transistors High Frequency Driver For Audio Amplifier
NTE55 Silicon Complementary Transistors High Frequency Driver For Audio Amplifier
NTE55 NTE54 (NPN) & NTE55 (PNP), Silicon Complementary Transistors High Frequency Driver For Audio Amplifier
NTE5500 Silicon Controlled Rectifier (SCR), 16 Amp. Peak Forward Blocking Voltage, Peak Reverse Blocking Voltage Vdrm,Vrsm(rep) = 25V. Forward Current RMS it = 25A.
NTE5511 Silicon Controlled Rectifier (SCR), 5 Amp. Peak Reverse Voltage (repetitive) Vrm(rep) = 200V. Forward Current RMS Ifrms = 5A.
NTE5514 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 200V. RMS On-state Current It(rms) = 20A.
NTE5517
NTE552 Silicon Rectifier. Max Reccurent Reverse Voltage 600V. Max Average Forward Rectified Current 1A.
NTE5520 Silicon Controlled Rectifier (SCR), 25A. Repetitive Peak Forward And Reverse Voltage Vdrm,vrrm = 25V. RMS Forard Current It(rms) = 25A.
NTE553 NTE553, Schottky Barrier Diode
NTE5530 Silicon Controlled Rectifier (SCR), 25A. Repetitive Peak Forward And Reverse Voltage Vdrm,vrrm = 25V. RMS Forard Current It(rms) = 25A.
NTE5536 Silicon Controlled Rectifier. Peak Reverse Blocking Voltage 800V. RMS Forward Current 40A.

NTE6104 : Industrial Rectifier, 550A. Cathode to Case. Repetitive Peak Reverse Voltae 600V.

NTE7098 : NTE7098 & NTE7099, Integrated Circuit Current Mode Pulse Width Modulator (PWM)

MLR104K400 : Mylar/polyester FILM

NTE7407 : Transistor Transistor Logic

MLR102K50 : Mylar/polyester FILM

NTE7071 : Integrated Circuit Dual, Full−bridge Driver

54-201W : SW-WATERPROOF ROCKER SPST

04-SLPE10000A : SPLIT LOOM 1IN UV BLACK

Same catergory

1N5406GP : 3 Amp Glass Passivated Rectifier 50 - 1000v. Low Current Leakage Metalurgically Bonded Construction Low Forward Voltage High Current Capability Glass Passivated Junction Operating Temperature: to +175C Storage Temperature: to +175C Maximum Thermal Resistance; 30C/W Junction To Lead Maximum Recurrent Peak Reverse Voltage 800V 1000V Maximum DC Blocking Voltage 800V 1000V Average Forward IF(AV).

1N5819 : 1.0 Ampere Schottky Barrier Rectifiers. frequency inverters free wheeling, and polarity protection applications. Maximum Repetitive Reverse Voltage Average Rectified Forward Current.375 " lead length = 90C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 20 *These ratings are limiting values above which the serviceability.

1SS389 : Schottky Barrier Diode For High Speed Switching Applications.

2SA1203 : Transistor ( Audio Frequency Amplifier Applications ).

KSD794 : NPN Epitaxial Silicon Transistor. Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature.

SDB310WM : Small Signal Type. Diode , Schottky Barrier Diode , Small Signal Type IO.

SRA2204UF : PNP Silicon Transistor. Switching application Interface circuit and driver circuit application With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Out Voltage Input Voltage Out Current Power Dissipation Junction Temperature Storage Temperature Output Cut-off Current DC Current Gain Output Voltage Input.

NX3008CBKS : 30 / 30 V, 350 / 200 MA N/P-channel Trench MOSFET Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology..

05003-120BMZJ : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BP, 0.000012 uF, SURFACE MOUNT, 0402. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.20E-5 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

A2-270K : 1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Axial, WIRE ; Application: General Purpose, RF Choke ; Inductance Range: 27 microH ; Inductance Tolerance: 10 (+/- %) ; DCR: 3.5 ohms ; Rated DC Current: 135 milliamps ; Q Factor: 50 ; SRF: 20 MHz ; Testing Frequency: 2500 kHz ; Operating Temperature: -55 to 125 C (-67.

AP3990R-HF : 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.6000 ohms ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, TO-262, 3 PIN ; Number of units in IC: 1.

CMUSH05-4BK : 0.5 A, 40 V, SILICON, SIGNAL DIODE. s: Package: SMD, 3 PIN ; Number of Diodes: 1 ; IF: 500 mA.

DB3X314K : SILICON, L BAND, MIXER DIODE. s: Diode Type: MIXER DIODE ; Diode Applications: Mixer ; RoHS Compliant: RoHS.

ER800-LF : 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AA. s: Package: TO-220, ROHS COMPLIANT, PLASTIC, TO-220A, 2 PIN ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 8000 mA ; trr: 0.0350 ns.

F844DT224M440C : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 1000 V, 0.22 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 0.2200 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 1000 volts ; Mounting Style: Through Hole.

FSM11PL-TP : 1 A, 50 V, SILICON, SIGNAL DIODE. s: Package: ROHS COMPLIANT, PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; IF: 1000 mA ; RoHS Compliant: RoHS.

TCE1906H01 : 8 A CURRENT SENSE TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Current-Sense ; Mounting: Chip Transformer ; Operating Frequency: 1000 Hz.

1CNXA1000MCA12.5X20 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, NON-POLARIZED, 16 V, 1000 uF, THROUGH HOLE MOUNT. s: Capacitance Range: 1000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 16 volts ; Leakage Current: 480 microamps ; Mounting Style: Through Hole ; Operating Temperature: -55 to 105 C (-67 to 221 F).

5800-101 : 1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: Axial, WIRE ; Application: General Purpose, High Current ; Inductance Range: 100 microH ; Rated DC Current: 632 milliamps ; Operating Temperature: -55 to 105 C (-67 to 221 F).

 
0-C     D-L     M-R     S-Z