Details, datasheet, quote on part number: NTE5419
PartNTE5419
CategoryDiscrete => Thyristors => SCR (Silicon Controlled Rectifiers)
DescriptionSilicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 200V. RMS On-state Current it = 10A.
CompanyNTE Electronics, Inc.
DatasheetDownload NTE5419 datasheet
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Features, Applications

Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5419. 600V Repetitive Peak Off­State Voltage (TC = +110°C), VDRM NTE5419. 600V RMS On­State Current (TC = +80°C, Conduction Angle of 180°), IT(RMS). 10A Peak Surge (Non­Repetitive) On­State Current (One Cycle or 60Hz), ITSM. 100A Peak Gate­Trigger Current (3µs Max), IGTM. 1A Peak Gate­Power Dissipation (IGT IGTM), PGM. 16W Average Gate Power Dissipation, PG(AV). 500mW Operating Temperature Range, Topr. to +110°C Storage Temperature Range, Tstg. to +150°C Typical Thermal Resistance, Junction­to­Case, RthJC. 2.5°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Peak Off­State Current Maximum Peak On­State Voltage DC Holding Current DC Gate­Trigger Current DC Gate­Trigger Voltage Gate Controlled Turn­On Time Critical Rate of Off­State Voltage Symbol IRRM IDRM VTM IHOLD IGT VGT tgt Test Conditions VRRM = Max, VDRM = Max, = 10A Gate Open = 60 IGT = 100mA Min Typ Max Unit V µs V/µs


 

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