Details, datasheet, quote on part number: NTE5410
PartNTE5410
CategoryDiscrete => Thyristors => SCR (Silicon Controlled Rectifiers)
DescriptionSilicon Controlled Rectifier (SCR). 3 Amp Sensitive Gate. Repetitive Peak Reverse Voltage VRRM = 200V.
CompanyNTE Electronics, Inc.
DatasheetDownload NTE5410 datasheet
Quote
Find where to buy
 
  

 

Features, Applications
NTE5408 thru NTE5410 Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate

Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void­free glass­passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages to 600V and with a gate current of 200µA. These NTE SCRs are reverse­blocking triode thyristors and may be switched from off­state to conduction by a current pulse applied to the gate terminal. The NTE5408 through NTE5410 are designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +100°C), VRRM NTE5410. 600V Repetitive Peak Off­State Voltage (TC = +100°C), VDRXM NTE5410. 600V RMS On­State Current (TC = +75°C, Conduction Angle of 180°), IT(RMS). 4A Peak Surge (Non­Repetitive) On­State Current (One Cycle or 60Hz), ITSM. 40A Peak Gate­Trigger Current (3µs Max), IGTM. 1A Peak Gate­Power Dissipation (IGT IGTM for 3µs Max), PGM. 20W Average Gate Power Dissipation, PG(AV). 200mW Operating Temperature Range, Topr. to +100°C Storage Temperature Range, Tstg. to +150°C Typical Thermal Resistance, Junction­to­Case, RthJC. +5°C/W

Parameter Peak Off­State Current Maximum On­State Voltage DC Holding Current DC Gate­Trigger Current DC Gate­Trigger Voltage Gate Controlled Turn­On Time I2t for Fusing Reference Critical Rate of Applied Forward Voltage Symbol IRRM IDRXM VTM IHOLD IGT VGT tgt I2t Test Conditions VRRM = Max, VDRXM = Max, = +100°C, RGK = 10A (Peak) RGK x 3GT For SCR Protection Min Typ Max Unit µs A2sec V/µs


 

Related products with the same datasheet
NTE5409
NTE541
Some Part number from the same manufacture NTE Electronics, Inc.
NTE5411 Silicon Controlled Rectifier (SCR). 4 Amp, Sensitive Gate. Repetitive Peak Voltage And Reverse Blocking Voltage (Vdrm, Vrrm) 30V.
NTE5417 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 200V. RMS On-state Current it = 10A.
NTE5424 Silicon Controlled Rectifier (SCR) For TV Power Supply Switcing. Repetitive Peak Reverse Voltage VRRM = 400V. RMS On-state Current it = 5.0A.
NTE5426 Silicon Controlled Rectifier (SCR). Sensitive Gate. Repetitive Peak Reverse Voltage VRRM = 400V. RMS On-state Current it = 10A.
NTE5427 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 200V. RMS On-state Current it = 7A.
NTE5437 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 400V. RMS On-state Current it = 8A.
NTE5440 Silicon Controlled Rectifier (SCR). ISOlated Tab. Repetitive Peak Voltage VRRM = 800V. RMS On-state Current it = 9A.
NTE5442 Silicon Controlled Rectifier (SCR). Peak Repetitive Forward And Reverse Blocking Voltage Vrrm(or Vdrm) = 50V. RMS On-state Current it = 8A.
NTE5452 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 30V. RMS On-state Current it = 4A.
NTE5460 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 800V. On-state RMS Current it = 25A.
NTE5461 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage, Repetitive Peak Off-state Voltage Vrrm,vdrm = 50V. RMS Forward Current it = 10A.
NTE5470 Silicon Controlled Rectifier (SCR). Peak Repetitive Reverse And Reverse Blocking Voltage Vrrm,vdrm = 50V. Forward Current RMS Itrms = 8A.
NTE5480
NTE5487 Silicon Controlled Rectifier ( SCR ) 8 Amp
NTE5491 Silicon Controlled Rectifier (SCR), 10 Amp. Peak Repetitive Off-state Blocking Voltage Vrrm,vdrm = 100V. RMS On-state Current Itrms = 25A.
NTE5498 Silicon Controlled Rectifier (SCR). Peak Repetitive Off-state Blocking Voltage Vrrm,vdrm = 400V. RMS On-state Current Itrms = 12A.
NTE54MP NTE54 (NPN) & NTE55 (PNP), Silicon Complementary Transistors High Frequency Driver For Audio Amplifier
NTE55 Silicon Complementary Transistors High Frequency Driver For Audio Amplifier
NTE55 NTE54 (NPN) & NTE55 (PNP), Silicon Complementary Transistors High Frequency Driver For Audio Amplifier
NTE5500 Silicon Controlled Rectifier (SCR), 16 Amp. Peak Forward Blocking Voltage, Peak Reverse Blocking Voltage Vdrm,Vrsm(rep) = 25V. Forward Current RMS it = 25A.
NTE5511 Silicon Controlled Rectifier (SCR), 5 Amp. Peak Reverse Voltage (repetitive) Vrm(rep) = 200V. Forward Current RMS Ifrms = 5A.

NTE121 : Germanium PNP Transistor. Audio Frequency Power Amplifier.

NTE4946 : Surge Clamping, Transient Overvoltage Suppressor, Unidirectional. VR = 5.80V Max Reverse Stand Off Voltage.

NTE5990 : Silicon Power Rectifier Diode. Cathode to Case. Max Repetitive Peak Reverse Voltage 1200V. Average Forward Current 40A.

NLE-L4R7M1010X16F : Miniature Aluminum Electrolytic Capacitors

SI15000M25 : Snap-in Mount Aluminum Electrolytic

NLE-LR22M105X11F : Miniature Aluminum Electrolytic Capacitors

NLE-SR22M106.3X5F : Miniature Aluminum Electrolytic Capacitors

503-0001 : TURNS COUNTING DIAL Specifications: Accessory Type: Turns Counting Dial ; For Use With: -

2W482 : NTE 2 Watt Flameproof Resistors, Resistance: 820 kOhm, Type: Metal Oxide Film, Tolerance: 2 %, Quantity: Sold individually

50WA210 : RES-50W 1K OHM 10%

 
0-C     D-L     M-R     S-Z