Details, datasheet, quote on part number: NTE5374
PartNTE5374
CategoryDiscrete => Thyristors => SCR (Silicon Controlled Rectifiers)
DescriptionSilicon Controlled Rectifier (SCR) For High Speed Switcing. Repetitive Peak Voltage 600V. Average On-state Current 183A.
CompanyNTE Electronics, Inc.
DatasheetDownload NTE5374 datasheet
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Features, Applications
& NTE5375 Silicon Controlled Rectifier (SCR) for High Speed Switching

Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM, VRRM NTE5375. 1200V Non­Repetitive Peak Off­State Voltage, VDSM NTE5375. 1200V Non­Repetitive Peak Reverse Blocking Voltage, VRSM NTE5375. 1300V Average On­State Current (TC = +85°C, Single phase, 50Hz, 180° sinewave), IT(AV). 183A RMS On­State Current, IT(RMS). 355A Continuous On­State Current, IT. 355A Peak One­Cycle Surge (Non­Repetitive) On­State Current, ITSM = 10ms, half sinewave, TJ(initial) = +125°C, VRM = 10ms, half sinewave, TJ(initial) = +125°C, VRM 10V). 3850A Maximum Permissible Surge Energy (TJ(initial) = 10ms, VRM = 10ms, VRM = 3ms, VRM x 103A2sec Peak Forward Gate Current (Anode Positive with Respect to Cathode), IFGM. 18A Peak Forward Gate Voltage (Anode Positive with Respect to Cathode), VFGM. 12V Peak Reverse Gate Voltage, VRGM. 5V Average Gate Power, PG(AV). 1.5W Peak Gate Power, PGM. 60W Rate of Rise of Off­State Voltage (To 80% VDRM, Gate Open­Circuit), dv/dt. 200V/µs Rate of Rise of On­State Current (Repetitive, Gate Drive 20V, 20 with tr 1µs), di/dt. 500A/µs Peak On­State Voltage (ITM = 600A), VTM. 1.96V Forward Conduction Threshold Voltage, VO. 1.4V Forward Conduction Slope Resistance, r. 0.937m Repetitive Peak Off­State Current (At Rated VDRM), IDRM. 30mA Repetitive Peak Reverse Current (At Rated VRRM), IRRM. 30mA Maximum Gate Current Required to Fire All Devices (TJ = 1A), IGT. 200mA Maximum Gate Voltage Required to Fire All Devices (TJ = 1A), VGT. 3V

Maximum Ratings and Electrical Characteristics (Cont'd): (TJ = +125°C unless otherwise specified) Maximum Holding Current (TJ = 1A), IH. 600mA Maximum Gate Voltage Which Will Not Trigger Any Device, VGD. 0.25V Typical Stored Charge (ITM = 300A, dir/dt 20A/µs, VRM 50V, 50% Chord Value), Qrr. 50µC Maximum Circuit Commutated Turn­Off Time, tq (ITM = 300A, dir/dt = 20A/µs, dv/dt to 80% VDRM). ­ 40µs Typical Circuit Commutated Turn­Off Time, tq (ITM = 300A, dir/dt = 20A/µs, dv/dt to 80% VDRM). ­ 35µs Operating Temperature Range, THS. to +125°C Storage Temperature Range, Tstg. to +150°C Thermal Resistance, Junction­to­Case, RthJC. 0.04/W


 

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