Details, datasheet, quote on part number: NTE5368
PartNTE5368
CategoryDiscrete => Thyristors => SCR (Silicon Controlled Rectifiers)
DescriptionSilicon Controlled Rectifier (SCR). Repetitive Peak Voltage 600V. Average On-state Current 75A.
CompanyNTE Electronics, Inc.
DatasheetDownload NTE5368 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VRRM, VDRM, VDSM NTE5369. 1200V Non­Repetitive Peak Reverse Blocking Voltage, VRSM NTE5369. 1300V Average On­State Current (Half Sine Wave, = +85°C), IT(AV). 75A RMS On­State Current, IT(RMS). 175A Continuous On­State Current, IT. 175A Peak One­Cycle Surge (10ms duration, 60% VRRM re­applied), ITSM (1). 1500A Non­Repetitive On­State Current (10ms duration, VR 10V), ITSM (2). 1650A Maximum Permissible Surge Energy (VR I2t 10ms duration. 13600A2s 3ms duration. 10000A2s Peak Forward Gate Current (Anode positive with respect to cathode), IFGM. 14A Peak Forward Gate Voltage (Anode positive with respect to cathode), VFGM. 20V Peak Reverse Gate Voltage, VRGM. 5V Average Gate Power, PG. 1.5W Peak Gate Power (100µs pulse width), PGM. 60W Rate of Rise of Off­State Voltage (To 80% VDRM gate open­circuit), dv/dt. 200V/µs Rate of Rise of On­State Current, di/dt (Gate drive 20V, 20 with tr 1µs, anode voltage 80% VDRM) Repetitive. 500A/µs Non­Repetitive. 1000A/µs Operating Temperature Range, Ths. to +125°C Storage Temperature Range, Tstg. to +150°C Thermal Resistance, Junction­to­Case, RthJC (For a device with a maximum forward voltage drop characteristic). 0.23°C/W

Absolute Maximum Ratings (Cont'd): (TJ = +125°C unless otherwise specified) Peak On­State Voltage (ITM = 280A), VTM. 2.54V Forward Conduction Threshold Voltage, VO. 1.7V Forward Conduction Slope Resistance, r. 3m Repetitive Peak Off­State Current (At VDRM), IDRM. 20mA Repetitive Peak Reverse Current (At VRRM), IRRM. 20mA Maximum Gate Current (VA = +25°C), IGT. 200mA Maximum Gate Voltage (VA = +25°C), VGT. 3V Maximum Holding Current (VA = +25°C), IH. 600mA Maximum Gate Voltage Which Will Not Trigger Any Device, VGD. 0.25V Typical Stored Charge (ITM = 200A, drR/dt = 10A/µs, VRM 50V, 50% chord value), Qrr. 25µC Circuit Commutated Turn­Off Time (ITM = 200A, diR/dt = 10A/µs, VRM to 80% VDRM). to 80% VDRM). (typical) 20­35µs


 

Related products with the same datasheet
NTE5369
Some Part number from the same manufacture NTE Electronics, Inc.
NTE5369 Silicon Controlled Rectifier (SCR). Repetitive Peak Voltage 600V. Average On-state Current 75A.
NTE5374 Silicon Controlled Rectifier (SCR) For High Speed Switcing. Repetitive Peak Voltage 600V. Average On-state Current 183A.
NTE5390
NTE54 Silicon Complementary Transistors High Frequency Driver For Audio Amplifier
NTE54 NTE54 (NPN) & NTE55 (PNP), Silicon Complementary Transistors High Frequency Driver For Audio Amplifier
NTE5400 Silicon Controlled Rectifier (SCR). 0.8 Amp Sensitive Gate. Repetitive Peak Reverse Voltage VRRM = 30V.
NTE5408 Silicon Controlled Rectifier (SCR). 3 Amp Sensitive Gate. Repetitive Peak Reverse Voltage VRRM = 200V.
NTE5411 Silicon Controlled Rectifier (SCR). 4 Amp, Sensitive Gate. Repetitive Peak Voltage And Reverse Blocking Voltage (Vdrm, Vrrm) 30V.
NTE5417 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 200V. RMS On-state Current it = 10A.
NTE5424 Silicon Controlled Rectifier (SCR) For TV Power Supply Switcing. Repetitive Peak Reverse Voltage VRRM = 400V. RMS On-state Current it = 5.0A.
NTE5426 Silicon Controlled Rectifier (SCR). Sensitive Gate. Repetitive Peak Reverse Voltage VRRM = 400V. RMS On-state Current it = 10A.
NTE5427 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 200V. RMS On-state Current it = 7A.
NTE5437 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 400V. RMS On-state Current it = 8A.
NTE5440 Silicon Controlled Rectifier (SCR). ISOlated Tab. Repetitive Peak Voltage VRRM = 800V. RMS On-state Current it = 9A.
NTE5442 Silicon Controlled Rectifier (SCR). Peak Repetitive Forward And Reverse Blocking Voltage Vrrm(or Vdrm) = 50V. RMS On-state Current it = 8A.
NTE5452 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 30V. RMS On-state Current it = 4A.
NTE5460 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 800V. On-state RMS Current it = 25A.
NTE5461 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage, Repetitive Peak Off-state Voltage Vrrm,vdrm = 50V. RMS Forward Current it = 10A.
NTE5470 Silicon Controlled Rectifier (SCR). Peak Repetitive Reverse And Reverse Blocking Voltage Vrrm,vdrm = 50V. Forward Current RMS Itrms = 8A.
NTE5480
NTE5487 Silicon Controlled Rectifier ( SCR ) 8 Amp

NTE2594 : Silicon NPN Transistor. High Voltage,high Current Switch.

NTE290 : Silicon Complementary Transistors Audio Power Amplifier, Switch

NTE5123A : Zener Diode, 5 Watt, +-5% Tolerance. Nominal Zener Voltage VZ = 3.3V. Test Current Izt = 380mA.

NTE5161A : Zener Diode, 5 Watt, +-5% Tolerance. Nominal Zener Voltage VZ = 3.3V. Test Current Izt = 380mA.

NTE5221A : Zener Diode, 10 Watt, +-5% Tolerance. Nominal Zener Voltage VZ = 3.9V. Zener Test Current Izt = 640mA.

NTE736 : Integrated Circuit FM IF Amp

SCTA.B.C.D.H682K20 : Surface Mount Tantalum

1WRD20 : RES-1W 0.20 OHM 5%

225WA150 : RES-225W 500 OHM 10%

04-1250RL9 : 12 IN RESEALABLE CABLE TIES 50 LB NATURAL 100 PACK

Same catergory

2N4236 : Screening Options Available = ;; Polarity = PNP ;; Package = TO39 (TO205AD) ;; Vceo = 80V ;; IC(cont) = 3A ;; HFE(min) = 30 ;; HFE(max) = 150 ;; @ Vce/ic = 1V / 250mA ;; FT = 3MHz ;; PD = 6W.

2SC1755 : 7V NPN Triple Diffused Planar Silicon Transistor. s Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance.

APT12080LVR : 1200V, 16A Power MOS V Transistor. Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source.

BF550/T1 : Transistor Sot-23. Low current (max. 25 mA) Low voltage (max. 40 V). APPLICATIONS Medium frequency applications in thick and thin film circuits. PNP medium frequency transistor a SOT23 plastic package. TYPE NUMBER BF550 Note p : Made in Hong Kong. t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO.

BZW06-15BRL : Diode Suppression. PEAK PULSE POWER W (10/1000µs) STAND-OFF VOLTAGERANGE : From 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology.

F0040BC18 : 1800 Insulated Gate Bi-polar Transistor Diodes - Capsule Type.

LV2001A : VHF Hyperabrupt Tuning Diodes. Package Style Operating Temperature (Topr) Storage Temperature (Tstg) Other package styles are available .

SI2302DS : SI2302DS; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3).

05002240AGMC : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000024 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 2.40E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/Ā°C ; Mounting Style: Surface.

CEJMK212BJ106KG-T : CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, X5R, 10 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 10 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 6.3 volts ; Mounting Style: Surface Mount Technology.

EEUFK0J102 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 1000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 1000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 63 microamps ; Mounting Style: Through Hole ; Operating Temperature:.

HLA05006Z50R00JJ : RESISTOR, POTENTIOMETER, WIRE WOUND, 50 W, 50 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis ; Resistance Range: 50 ohms ; Tolerance: 5 +/- % ; Operating Temperature: -55 to 350 C (-67 to 662 F).

JANS2N2857 : UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72. s: Polarity: NPN ; Package Type: HERMETIC SEALED, METAL CAN-4 ; Number of units in IC: 1.

MF1001000BTR : RESISTOR, METAL FILM, 1 W, 0.1 %, 50 ppm, 100 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 100 ohms ; Tolerance: 0.1000 +/- % ; Temperature Coefficient: 50 Ā±ppm/Ā°C ; Power Rating: 1 watts (0.0013.

MOX910 : RESISTOR, 3.8 W, 0.05 - 10 %, 5; 10; 15; 25; 50; 100 ppm, 1000 ohm - 5000000000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Operating DC Voltage: 15000 volts ; Operating Temperature: -55 to 350 C (-67 to 662 F).

NRGB100M100V6.3X11TBF : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 100 V, 10 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 10 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 100 volts ; Leakage Current: 10 microamps ; ESR: 24900 milliohms ; Mounting Style: Through Hole ; Operating Temperature: -25 to 105 C (-13.

SMV1430-040LF : VARIABLE CAPACITANCE DIODE. s: Diode Type: VARIABLE CAPACITANCE DIODE.

ZT95E1 : 1 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-205AD. s: Polarity: NPN ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN.

602SJR : RESISTOR, CURRENT SENSE, METAL STRIP, 0.25 W, 5 %, 5 %, 100 ppm, 0.003 ohm - 0.005 ohm, SURFACE MOUNT, 3912. s: Category / Application: Current Sensing, General Use ; Technology / Construction: METAL STRIP ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), ROHS COMPLIANT ; Tolerance: 5 +/- % ; Operating Temperature: -40 to 155 C (-40 to 311 F).

60R025X : RESISTOR, TEMPERATURE DEPENDENT, PTC RESETTABLE FUSE, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards and Certifications: RoHS.

 
0-C     D-L     M-R     S-Z