Details, datasheet, quote on part number: NTE5312
PartNTE5312
CategoryDiscrete => Diodes & Rectifiers => General Purpose Diodes
DescriptionSingle Phase Bridge Rectifier, 8A. Maximum Recurrent Peak Reverse Voltage, PRV = 100V.
CompanyNTE Electronics, Inc.
DatasheetDownload NTE5312 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Features: D Low Forward Voltage Drop D Surge Overload Rating: 200A (Peak) D Mounting Hole Thru for #6 Screw Maximum Ratings and Electrical Characteristics: (TA = +25C unless otherwise specified. Single Phase, Full Wave, 60Hz, Resistive or Inductive Load. For Capacitive Load, Derate Current by 20%) Maximum Recurrent Peak Reverse Voltage, PRV NTE5317. 1000V Maximum RMS Bridge Input Voltage, NTE5317. 700V Maximum DC Blocking Voltage, NTE5317. 1000V Maximum Average Forward Output Current (TC = +75C), IF(AV). 8A Peak Forward Surge Current, IFSM (8.3ms Single SineWave Superimposed on Rated Load). 200A Maximum Forward Voltage Drop (Per Bridge Element, = 4A), VF. 1.1V Maximum Reverse Current (at Rated DC Blocking Voltage per Element), +100C. 1mA Operating Junction Temperature Range, TJ. to +125C Storage Temperature Range, Tstg. to +150C


 

Related products with the same datasheet
NTE5313
NTE5314
NTE5315
NTE5316
NTE5317
Some Part number from the same manufacture NTE Electronics, Inc.
NTE5313 Single Phase Bridge Rectifier, 8A. Maximum Recurrent Peak Reverse Voltage, PRV = 100V.
NTE5318 Single Phase Bridge Rectifier, 4A. Maximum Recurrent Peak Reverse Voltage, PRV = 200V.
NTE5322 Silicon Bridge Rectifier, Single - Phase, 25A. Maximum Recurrent Peak Reverse Voltage, PRV = 200V.
NTE5322W
NTE5323
NTE5323W
NTE5324
NTE5324W
NTE5325
NTE5325W
NTE5326
NTE5326W
NTE5327
NTE5327W
NTE5328
NTE5328W
NTE5329 Single Phase Bridge Rectifier, 6A. Maximum Recurrent Peak Reverse Voltage, PRV = 200V.
NTE5332 Silicon Bridge Rectifier, 1A. Maximum Recurrent Peak Reverse Voltage, VRRM = 600V.
NTE5335 3-phase Bridge Rectifier. Maximum DC Output Current id = 60A. Repetitive Peak Reverse Voltage VRRM = 600V.
NTE5340 Silicon Bridge Rectifier. Single-phase, 40 A. Peak Reverse Voltage, PRV = 200V. Average Forward Current, If(av) = 40A.
NTE5346 Silicon Bridge Rectifier. Max Repetitive Peak Reverse Voltage, PRV = 600V. Max DC Output Current id = 80A.

NTE156A : Silicon General Purpose Rectifier.

NTE1802 : NTE1802, Integrated Circuit Power Amplifier For Car Stereo Radio,

NTE1912 : NTE1912, Integrated Circuit Positive 3 Terminal Voltage Regulator,

NTE377 : Silicon Complementary NPN Transistor. Power Amp Driver, Output, Switch.

NTE5722 : NTE5710 Thru NTE5712, NTE5720 Thru NTE5722 NTE6220 & NTE6230

NTE5817 : 6 Amp. Plastic Silicon Rectifier. Max Recurrent Peak Reverse Voltage 100V. Max RMS Voltage 70V. Max Average Forward Rectified Current 6A.

NLE-LR22M3510X16F : Miniature Aluminum Electrolytic Capacitors

04-0533HLMC : 5 IN HOOK & LOOP CABLE TIES 10 PACK MULTI COLORED

Same catergory

2A06 : Pakage = DO-15 ;; Max. Reverse Voltage VRM (V)= 800 ;; Max. Aver. Rect. Current io (A)= 2 ;; Ifsm (A)= 60.

BSH205/T1 : Transistor MOSFET Sot-23. Very low threshold voltage Fast switching Logic level compatible Subminiature surface mount package QUICK REFERENCE DATA VDS -0.75 A RDS(ON) 0.5 (VGS -2.5 V) VGS(TO) 0.4 V P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications.

F16C30 : Fast recovery rectifier diodes. Fast Recovery Rectifier Diodes.

IRF246 : 14a And 13a, 275v And 250v, 0.28 And 0.34 Ohm, N-channel Power MOSFETs.

KBU4AthruKBU4M : . Plastic package has Underwriters Laboratory Flammability Classification 94V-0 This series is UL listed under the Recognized Component Index, file number E54214 High case dielectric strength of 1500 VRMS Ideal for printed circuit boards Surge overload rating of 200A peak Typical IR less than 0.1A High temperature soldering guaranteed: 250C/10 seconds,.

2STA2121 : Transistors, Power Bipolar High power PNP epitaxial planar bipolar transistor.

PZUxBA : Single Zener Diodes General-purpose Zener diodes in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package..

DA6X101K : MIXER DIODE. s: Diode Type: MIXER DIODE ; Diode Applications: Mixer ; RoHS Compliant: RoHS.

KZH10VB1000MH15 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 1000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 1000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 100 microamps ; Mounting Style: Through Hole ; Operating Temperature: -40 to 105 C (-40 to 221 F).

MP2A-150-R : 1 ELEMENT, 15 uH, MOLY PERMALLOY POWDER-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: MOLY PERMALLOY POWDER ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, Power Choke ; Inductance Range: 15 microH ; Operating Temperature:.

NRLPW101M400V20X30LF : CAP,AL2O3,100UF,400VDC,20% -TOL,20% +TOL. LONG LIFE +105C (3,000 HOURS) HIGH RIPPLE CURRENT HIGH VOLTAGE (UP TO 500VDC) SUITABLE FOR SWITCHING POWER SUPPLIES S Operating Temperature Range ~ +105C Rated Voltage Range ~ 500Vdc Rated Capacitance Range ~ 2,700F Capacitance Tolerance 20% (M) Max. Leakage Current (A) 3 x C(F)V After 5 minutes (20C) W.V. (Vdc) Max. Tan at 120Hz/20C Tan max. W.V.

SDS105-100K : 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: ONE SURFACE ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Rated DC Current: 2100 milliamps ; Operating Temperature:.

ST3230C10R0LPBF : 5970 A, 1000 V, SCR. s: VDRM: 1000 volts ; VRRM: 1000 volts ; IT(RMS): 5970 amps ; IGT: 400 mA ; Standards and Certifications: RoHS ; Package Type: RPUK-2 ; Pin Count: 2.

UTD452-TN3-R : 55 A, 25 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 25 volts ; rDS(on): 0.0085 ohms ; Package Type: TO-252 (DPAK), TO-252, 3 PIN ; Number of units in IC: 1.

VS-MURD620CT-M3 : 6 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, ULTRA FAST RECOVERY ; IF: 6000 mA ; Package: DPAK, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3 ; Pin Count: 2 ; Number of Diodes: 2.

2N5737.MOD : 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: PNP ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

 
0-C     D-L     M-R     S-Z