Details, datasheet, quote on part number: MRF650
DescriptionRF Power Transistor NPN Silicon
CompanyMotorola Semiconductor Products
DatasheetDownload MRF650 datasheet
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Features, Applications

Designed for 12.5 Volt UHF large­signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain 440, 470 MHz Efficiency MHz IRL = 10 dB Characterized with Series Equivalent Large­Signal Impedance Parameters from to 520 MHz Built­In Matching Network for Broadband Operation Triple Ion Implanted for More Consistent Characteristics Implanted Emitter Ballast Resistors Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc, 2.0 dB Overdrive Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Rating Collector­Emitter Voltage Collector­Emitter Voltage Emitter­Base Voltage Collector Current Continuous Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VEBO IC PD Tstg TJ Value +150 200 Unit Vdc Adc Watts W/°C °C

Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.3 Unit °C/W

Collector­Emitter Breakdown Voltage (IC = 50 mAdc, = 0) Collector­Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter­Base Breakdown Voltage (IE = 10 mAdc, = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 25°C) V(BR)CEO V(BR)CES V(BR)EBO ICES hFE Cob Vdc mAdc

Output Capacitance (VCB = 12.5 Vdc, = 1.0 MHz) 170 pF (continued)
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
FUNCTIONAL TESTS (In Motorola Test Fixture. See Figure 1.)

Common­Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout 440, 470 MHz) Common­Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 512 MHz) Input Return Loss (VCC = 12.5 Vdc, Pout W, f MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout 440, 470 MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout = 512 MHz) Output Mismatch Stress (VCC 2.0 dB Overdrive, = 470 MHz, VSWR = 20:1, All Phase Angles) (1) Gpe IRL (2) No Degradation in Output Power dB %

NOTES: 1. Pin 2.0 dB above drive requirement for 50 W output at 12.5 Vdc. 2. = Mismatch stress factor the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in the standard test fixture (Figure 1) terminated a 20:1 minimum load mismatch at all phase angles. R1 VRE PORT B2 B3 SOCKET R2 B8

B1, B8 Ferrite Bead Ferroxcube B6, B7 Ferrite Bead Ferroxcube C8 10 µF, V, 25%, Electrolytic, ECS C7 1000 pF, Chip Cap, 5%, ATC C6 91 pF, 5%, Mica, SAHA C13 36 pF, 5%, SAHA C16 220 pF, Chip Cap, 5%, ATC ­ 10 pF, Variable, Johanson ­ 20 pF, Variable, Johanson L2 3 Turns, 18 AWG, 0.19 ID Total Length N2 N Coaxial Conn., Omni­Spectra R2 10 Ohm, 1.0 W, Carbon, RCA 831010

= 50 Ohm TL2 See Photomaster TL3 See Photomaster TL4 See Photomaster TL5 See Photomaster TL6 See Photomaster TL7 See Photomaster TL8 See Photomaster TL9 See Photomaster TL10 See Photomaster TL11 See Photomaster Transmission Line Boards: 1/16 Glass­Teflon Transmission Line Boards: Keene GX­0600­55­22 Transmission Line Boards: 2 oz. Cu Clad Both Sides Transmission Line Boards: = 2.55 Bias Boards: G10 or Equivalent Bias Boards: 2 oz. Cu Clad Double Sided

Figure to 512 MHz Broadband Test Circuit Schematic MRF650 2 MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power
Figure 4. Output Power versus Supply Voltage
NOTE: Zin & ZOL* are given from base­to­base and collector­to­collector respectively.

ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency.

Figure 6. Input and Output Impedance Normalized to 10 Ohms Circuit Tuned for Maximum Gain 50 W


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