Details, datasheet, quote on part number: MRF650
PartMRF650
CategoryDiscrete
DescriptionRF Power Transistor NPN Silicon
CompanyMotorola Semiconductor Products
DatasheetDownload MRF650 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Designed for 12.5 Volt UHF large­signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain 440, 470 MHz Efficiency MHz IRL = 10 dB Characterized with Series Equivalent Large­Signal Impedance Parameters from to 520 MHz Built­In Matching Network for Broadband Operation Triple Ion Implanted for More Consistent Characteristics Implanted Emitter Ballast Resistors Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc, 2.0 dB Overdrive Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Rating Collector­Emitter Voltage Collector­Emitter Voltage Emitter­Base Voltage Collector Current Continuous Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VEBO IC PD Tstg TJ Value +150 200 Unit Vdc Adc Watts W/°C °C

Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.3 Unit °C/W

Collector­Emitter Breakdown Voltage (IC = 50 mAdc, = 0) Collector­Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter­Base Breakdown Voltage (IE = 10 mAdc, = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 25°C) V(BR)CEO V(BR)CES V(BR)EBO ICES hFE Cob Vdc mAdc

Output Capacitance (VCB = 12.5 Vdc, = 1.0 MHz) 170 pF (continued)
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
FUNCTIONAL TESTS (In Motorola Test Fixture. See Figure 1.)

Common­Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout 440, 470 MHz) Common­Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 512 MHz) Input Return Loss (VCC = 12.5 Vdc, Pout W, f MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout 440, 470 MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout = 512 MHz) Output Mismatch Stress (VCC 2.0 dB Overdrive, = 470 MHz, VSWR = 20:1, All Phase Angles) (1) Gpe IRL (2) No Degradation in Output Power dB %

NOTES: 1. Pin 2.0 dB above drive requirement for 50 W output at 12.5 Vdc. 2. = Mismatch stress factor the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in the standard test fixture (Figure 1) terminated a 20:1 minimum load mismatch at all phase angles. R1 VRE PORT B2 B3 SOCKET R2 B8

B1, B8 Ferrite Bead Ferroxcube B6, B7 Ferrite Bead Ferroxcube C8 10 µF, V, 25%, Electrolytic, ECS C7 1000 pF, Chip Cap, 5%, ATC C6 91 pF, 5%, Mica, SAHA C13 36 pF, 5%, SAHA C16 220 pF, Chip Cap, 5%, ATC ­ 10 pF, Variable, Johanson ­ 20 pF, Variable, Johanson L2 3 Turns, 18 AWG, 0.19 ID Total Length N2 N Coaxial Conn., Omni­Spectra R2 10 Ohm, 1.0 W, Carbon, RCA 831010

= 50 Ohm TL2 See Photomaster TL3 See Photomaster TL4 See Photomaster TL5 See Photomaster TL6 See Photomaster TL7 See Photomaster TL8 See Photomaster TL9 See Photomaster TL10 See Photomaster TL11 See Photomaster Transmission Line Boards: 1/16 Glass­Teflon Transmission Line Boards: Keene GX­0600­55­22 Transmission Line Boards: 2 oz. Cu Clad Both Sides Transmission Line Boards: = 2.55 Bias Boards: G10 or Equivalent Bias Boards: 2 oz. Cu Clad Double Sided

Figure to 512 MHz Broadband Test Circuit Schematic MRF650 2 MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power
Figure 4. Output Power versus Supply Voltage
NOTE: Zin & ZOL* are given from base­to­base and collector­to­collector respectively.

ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency.

Figure 6. Input and Output Impedance Normalized to 10 Ohms Circuit Tuned for Maximum Gain 50 W

 

Some Part number from the same manufacture Motorola Semiconductor Products
MRF652 RF Power Transistors NPN Silicon
MRF6522-060 MRF6522-60 RF Power Transistor
MRF6522-070 MRF6522-70, MRF6522-70R3 921-960 Mhz, 70 W, 26 V Lateral N-channel RF Power MOSFETs
MRF6522-10
MRF6522-10R1 MRF6522-10R1 960 Mhz, 10 W, 26 V Lateral N-channel RF Power MOSFET
MRF6522-5
MRF6522-5R1 MRF6522-5R1 RF Power Transistor
MRF6522-60
MRF6522-60
MRF6522-70
MRF6522-70 921-960 Mhz, 70 w, 26 V Lateral N-channel Broadband RF Power MOSFET
MRF6522-70R3 MRF6522-70, MRF6522-70R3 921-960 Mhz, 70 W, 26 V Lateral N-channel RF Power MOSFETs
MRF652S RF Power Transistors NPN Silicon
MRF653 RF Power Transistor NPN Silicon
MRF654
MRF658
MRF6S21100HR3 2170 Mhz, 23 W Avg., 28 V, 2 X W–CDMA Lateral N–Channel RF Power MOSFET
MRF8372 RF Low Power Transistor NPN Silicon
MRF840 RF Power Transistor NPN Silicon
MRF842
MRF847

M68ICS05C :

MC12022LVB :

MC145011DW : Photoelectric MC145011 Photoelectric Smoke Detector ic With I/o

MC33182P : Low Power, High Slew Rate, JFET Input Operational Amplifier

MC44BC373C :

MMBR951 : Bipolar Ic=100 ma Low Noise High-frequency Transistors

MMBZ5231BLT1 : Zener Voltage Regulator Diode

MMA8215EG : Digital Axis Micromachined Accelerometer The MMA81XXEG (Z-axis) and MMA82XXEG (X-axis) are members of Freescale’s family of DSI 2.0-compatible accelerometers. These devices incorporate digital signal processing for filtering, trim and data formatting.

ATC100B6R8BT500XT : RF Ldmos Wideband Integrated Power Amplifiers

MCF52221CAE66 : Coldfire Microcontroller

MC33972TEWR2 : Multiple Switch Detection Interface with Suppressed Wake-up

MC9S08DV48ACLH : Hcs08 Microcontrollers high-performance HCS08 Family of 8-bit microcontroller units (MCUs). All MCUs in the family use the enhanced HCS08 core and are available with a variety of modules, memory sizes, memory types, and package types. 1.1 Devices in the MC9S08DZ128 Series

Same catergory

EA40QC10 : Device = SBD ;; Ripetitive Peak Reverse Voltage(V) = 100 ;; Average Rectified Current(A) = 4 ;; Condition(cace or Ambient Temperature) = Tc=129 ;; Surge Forward Current(A) = 40 ;; Maximam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to 150 ;; Peak Forward Voltage(V) = 0.85 ;; Peak Forward Current(A) = 2 ;; Peak Reverse.

FR10A : Package Type : Hsmc, if : 10A, VRM : 50V. Low Leakage Low Forward Voltage Drop High Current Capability Fast Switching Speed For High Efficiency Operating Temperature: +150° C Storage Temperature: +150° C MCC Part Number FR10K FR10M Maximum Recurrent Peak Reverse Voltage 800V 1000V Maximum RMS Voltage 560V 700V Maximum DC Blocking Voltage 800V 1000V Average Forward Current Peak Forward Surge.

GFU25N03 : . Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency Low Gate Charge Case: JEDEC TO-251 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds.

KSR2010 : Epitaxial. PNP Epitaxial Silicon Transistor. Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to KSR1010 Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature.

RURH1560CC : 15A, 600V Ultrafast Dual Diode. RURH1540CC, MUR3060PT, and RURH1560CC are ultrafast dual diodes (trr < 55ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power.

XBS206S17R : Schottky Barrie Diodes Schottky Barrie Diodes. Forward Voltage Forward Current Repetitive Peak Reverse Voltage : VF=0.615V (TYP.) : VRM=60V APPLICATIONS Rectification Protection against reverse connection of battery Ta=25 PARAMETER Repetitive Peak Reverse Voltage Reverse Voltage (DC) Forward Current (Average) Non Continuous Forward Surge Current Junction Temperature Storage Temperature Range *1 DEVICE.

BLF6G13L-250P : Power LDMOS Transistor 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz..

AL05-161-JA : 1 ELEMENT, 160 uH, NON-MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: NON-MAGNETIC ; Lead Style: Axial, WIRE ; Application: General Purpose, RF Choke ; Inductance Range: 160 microH ; Inductance Tolerance: 5 (+/- %) ; DCR: 4.4 ohms ; Rated DC Current: 170 milliamps ; Q Factor: 60 ; SRF: 3.2 MHz ; Testing.

C1210N102F1GM : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BP, 0.001 uF, SURFACE MOUNT, 1210. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.00E-3 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology ; EIA Case.

PP0641SA-T13 : 20 A, SILICON SURGE PROTECTOR, DO-214AA. s: Thyristor Type: Thyristor Surge Suppressor, SILICON SURGE PROTECTOR ; Package Type: PLASTIC, SMB, 2 PIN ; Pin Count: 2.

RM04J000CT : JUMPER, METAL GLAZE/THICK FILM, 0.0625 W, 5 %, 0 ohm, SURFACE MOUNT, 0402. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0402, CHIP ; Resistance Range: 0.0 ohms ; Tolerance: 5 +/- % ; Power Rating: 0.0625 watts (8.38E-5 HP) ; Operating Temperature:.

TPC8075 : 18000 mA, 33 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 33 volts ; rDS(on): 0.0033 ohms ; Package Type: ROHS COMPLIANT, THIN, 2-6J1S, SOP-8 ; Number of units in IC: 1.

VS-6CWH02FN-M3 : 3 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, HYPER ULTRA FAST RECOVERY ; IF: 3000 mA ; Package: DPAK, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3 ; Pin Count: 2 ; Number of Diodes: 2.

101T14 : CAPACITOR, CERAMIC, MULTILAYER, 100 V, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).

2222048 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 - 63 V, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic ; : Polarized ; Mounting Style: Through Hole ; Operating Temperature: -40 to 105 C (-40 to 221 F).

2SA2209-TL : 15000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: TP-FA, 3 PIN.

 
0-C     D-L     M-R     S-Z