Details, datasheet, quote on part number: MRF6404K
PartMRF6404K
CategoryRF & Microwaves => Transistors => Power Transistors => Power Bipolar Transistors
TitlePower Bipolar Transistors
DescriptionMRF6404 30 W, 1.88 GHZ RF Power Transistor - Archived
CompanyMotorola Semiconductor Products
DatasheetDownload MRF6404K datasheet
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Features, Applications

The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range to 2.0 GHz. Specified 26 Volts, 1.88 GHz Characteristics Output Power 30 Watts Gain 7.5 dB Min @ 30 Watts Efficiency 38% Min @ 30 Watts Characterized with Series Equivalent Large­Signal Parameters from to 2.0 GHz To be used in Class AB for DCS1800 and PCS1900/Cellular Radio Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Rating Collector­Emitter Voltage Collector­Emitter Voltage Emitter­Base Voltage Collector­Current Continuous Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VEBO IC PD Tstg TJ Value +150 200 Unit Vdc Adc Watts W/°C °C

Characteristic Thermal Resistance, Junction to Case (1) Symbol RJC Max 1.4 Unit °C/W

Characteristic OFF CHARACTERISTICS Collector­Emitter Breakdown Voltage (IC = 50 mA, = 0) Emitter­Base Breakdown Voltage (IE = 10 mAdc) Collector­Base Breakdown Voltage (IC = 50 mAdc) Collector­Base Breakdown Voltage (IC = 50 mAdc, RBE 75 ) Collector Cutoff Current (VCE 30 V, VBE 0) ON CHARACTERISTICS DC Current Gain (IC = 1 Adc, VCE = 5 Vdc) hFE 50 120 V(BR)CEO V(BR)EBO V(BR)CES V(BR)CER ICES Vdc mA Symbol Min Typ Max Unit

(1) Thermal resistance is determined under specified RF operating condition.
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)

Characteristic DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 1 MHz) For information only. This part is collector matched. FUNCTIONAL TESTS Common­Emitter Amplifier Power Gain (VCC 26 V, Pout 30 W, ICQ = 150 mA, = 1.88 GHz) Common­Emitter Amplifier Power Gain (VCC 26 V, Pout 28 W, ICQ = 150 mA) = 1.99 GHz) Collector Efficiency (VCC 26 V, Pout = 1.88 GHz) (VCC 26 V, Pout = 1.99 GHz) Gpe dB Cob 38 pF Symbol Min Typ Max Unit

Output Mismatch Stress: VSWR = 3:1 (all phase angles) (VCC = 26 Vdc, Pout 25 W, ICQ = 150 mA, = 1.88 GHz)

ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency.

Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC 26 V, ICQ = 150 mA, Pout 30 W

Output Power at 1 dBc (VCC = 1.88 GHz) (VCC = 1.99 GHz)
Figure 2. Output Power versus Input Power

 

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